Abstract: A method for cutting a metal plate, a method for manufacturing a metal product, and the metal product are provided which enable the formation of cracks to be suppressed even with application of external force and enable strength of a product to be increased. A method for cutting a metal plate 2 of one aspect according to the present invention includes a crushing step and a separation step. The crushing step is a step of crushing a removal target part 22 of the metal plate 2 in a thickness direction of the metal plate 2 by applying, to the removal target part 22, force from both sides in the thickness direction so as to deform the removal target part 22 into a thin-walled part 23. The separation step is a step of separating, after crushing step, the thin-walled part 23 from a body 21 of the metal plate 2.

Abstract: A method for cutting a metal plate, a method for manufacturing a metal product, and the metal product are provided which enable the formation of cracks to be suppressed even with application of external force and enable strength of a product to be increased. A method for cutting a metal plate 2 of one aspect according to the present invention includes a crushing step and a separation step. The crushing step is a step of crushing a removal target part 22 of the metal plate 2 in a thickness direction of the metal plate 2 by applying, to the removal target part 22, force from both sides in the thickness direction so as to deform the removal target part 22 into a thin-walled part 23. The separation step is a step of separating, after crushing step, the thin-walled part 23 from a body 21 of the metal plate 2.

Abstract: A resistance memory element which memorizes a high resistance state and a low resistance state and is switched between the high resistance state and the low resistance state by an application of a voltage includes a first electrode layer of titanium nitride film, a resistance memory layer formed on the first electrode layer and formed of titanium oxide having a crystal structure of rutile phase, and a second electrode layer formed on the resistance memory layer.

Abstract: A resistance memory element which memorizes a high resistance state and a low resistance state and is switched between the high resistance state and the low resistance state by an application of a voltage includes a first electrode layer of titanium nitride film, a resistance memory layer formed on the first electrode layer and formed of titanium oxide having a crystal structure of rutile phase, and a second electrode layer formed on the resistance memory layer.