Abstract: A capacitor which can be manufactured easily without an addition of photo masks and manufacturing processes is obtained. The capacitor has a plural via plugs (1a to 1c) which function as a first electrode and a plural via plugs (2a to 2c) which function as a second electrode. The via plugs (1a to 1c) are formed in a row along an X direction, and similarly, the via plugs (2a to 2c) are also formed in a row along the X direction. The capacitor is formed in a multilayer wiring structure of a semiconductor device, and the via plugs (1a to 1c) and the via plugs (2a to 2c) face each other with part of an interlayer insulating film between. Part of the interlayer insulating film which is put between the via plugs (1a to 1c) and the via plugs (2a to 2c) function as a capacitor dielectric film.

Abstract: A silicon substrate (1) includes a neutron detecting part comprising a 10B diffusion layer which includes boron introduced therein containing isotopes 10B, an &agr;-ray detecting part including a pn junction (13) defined by a p well (11) and an n well (12), and an analytic circuit part for analyzing electric charge generated in the pn junction (13), all of which are provided on a single chip. An &agr;-ray generated in the 10B diffusion layer (10) as a result of entering of neutrons generates electron-hole pairs (16) in a depletion layer of the pn junction (13). The analytic circuit part collects and analyzes electric charge of the electron-hole pairs (16). On the basis of the result of analysis, the volume of neutrons entering into the pn junction (13) is specified.

Abstract: A thermoelectric converting element is constituted of an N-type semiconductor region, a P-type semiconductor region and metal interconnections. The N-type semiconductor region is formed simultaneously with an n31 impurity region and an n+ impurity region of a transistor in an element forming region. The P-type semiconductor region is formed simultaneously with a p− impurity region and a p+ impurity region of another transistor. In addition, the interconnections in the thermoelectric converting element are formed simultaneously with a metal interconnection connected to the transistor. Thus, a semiconductor device can be obtained, in which cooling effect can be readily achieved without increasing production cost.

Abstract: A semiconductor substrate wafer 2 is supported on a wafer-supporting table 3 so that a surface to be polished is directed upward, a polishing roller 1 is bring to contact with the surface to be polished of the semiconductor substrate wafer 2, and the polishing roller is rolled over the wafer under a pressure whereby a scattering of polishing to the surface of the semiconductor substrate wafer can be eliminated while productivity is increased.

Abstract: A capacitor which can be manufactured easily without an addition of photo masks and manufacturing processes is obtained.

Abstract: A thermoelectric converting element is constituted of an N-type semiconductor region, a P-type semiconductor region and metal interconnections. The N-type semiconductor region is formed simultaneously with an n31 impurity region and an n+ impurity region of a transistor in an element forming region. The P-type semiconductor region is formed simultaneously with a p− impurity region and a p+ impurity region of another transistor. In addition, the interconnections in the thermoelectric converting element are formed simultaneously with a metal interconnection connected to the transistor. Thus, a semiconductor device can be obtained, in which cooling effect can be readily achieved without increasing production cost.

Abstract: A semiconductor integrated device includes a boron containing layer 4 containing an isotope 10B formed on a semiconductor substrate 1. Neutrons irradiated to the boron containing layer 4 are brought into a reaction with the isotope 10B to emit &agr; rays which are then rushed into the semiconductor substrate 1 to generate electron-positive hole pairs 8 in a P-N junction layer. Thus, neutrons are detected.

Abstract: A motor driven fuel pump adapted for use with a fuel injection system of an internal combustion engine has a pump housing and an impeller of regenerative pump type rotatably disposed in the housing and provided with circumferential rows of grooves formed in the opposite end faces of the impeller along the outer peripheral edges thereof. The housing is formed therein with suction and discharge ports and cooperates with the impeller to define a fuel pressurizing passage extending circumferentially of the impeller and surrounding the grooved outer peripheral section thereof. The fuel pressurizing passage is circumferentially interrupted by a partition wall disposed between the suction and discharge ports and extending radially inwardly into close contacting relationship to the outer peripheral section of the impeller to prevent flow of fuel from the discharge port toward the suction port.