Patents by Inventor Takashi Inujima
Takashi Inujima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20050196549Abstract: A new chemical vapor reaction system is described. Instead of ECR where electrons can move as independent particles without interaction, a mixed cyclotron resonance is a main exciting principal for chemical vapor reaction. In the new proposed resonance, the resonating space is comparatively large so that a material having a high melting point such as diamond can be deposited in the form of a thin film by this inovative method.Type: ApplicationFiled: April 11, 2005Publication date: September 8, 2005Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Takashi Inujima, Naoki Hirose, Mamoru Tashiro, Shunpei Yamazaki
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Publication number: 20050106331Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.Type: ApplicationFiled: December 28, 2004Publication date: May 19, 2005Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 6838126Abstract: A film comprising an i-carbon is formed by converting a reactive gas containing a carbon compound gas into plasma by a resonance using a microwave and a magnetic field.Type: GrantFiled: July 8, 2002Date of Patent: January 4, 2005Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 6677001Abstract: A new chemical vapor reaction system is described. Instead of ECR where electrons can move as independent particles without interaction, a mixed cyclotron resonance is a main exciting principal for chemical vapor reaction. In the new proposed resonance, the resonating space is comparatively large so that a material having a high melting point such as diamond can be deposited in the form of a thin film by this inovative method.Type: GrantFiled: June 6, 1995Date of Patent: January 13, 2004Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inujima, Naoki Hirose, Mamoru Tashiro, Shunpei Yamazaki
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Publication number: 20030021910Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the, center position of the vacuum chamber.Type: ApplicationFiled: July 8, 2002Publication date: January 30, 2003Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 6423383Abstract: A plasma processing apparatus and method is equipped with a reaction chamber, a microwave generator for generating a microwave within the reaction chamber, and main and auxiliary magnets for producing a magnetic filed parallel with microwave propagation direction. The auxiliary magnet is located along the wall of the reaction chamber so as to strengthen the magnetic filed at the periphery of the reaction chamber. A reactive gas containing a carbon compound gas is introduced into the chamber wherein the reactive gas is converted into a plasma by a resonance using the microwaves and the magnetic field. The presence of the auxiliary magnet produces a centrifugal drifting force within the reaction chamber, thereby confining the plasma gas to the center of the chamber. A substrate is then placed within the chamber and a film comprising amorphous carbon is deposited thereon.Type: GrantFiled: November 20, 1998Date of Patent: July 23, 2002Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 6217661Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.Type: GrantFiled: November 20, 1998Date of Patent: April 17, 2001Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 5858259Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.Type: GrantFiled: July 14, 1997Date of Patent: January 12, 1999Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 5685913Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.Type: GrantFiled: November 29, 1993Date of Patent: November 11, 1997Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 5462767Abstract: A CVD method for forming a conformal coating over a depression or a cave in a top surface is disclosed, which comprises the steps of forming at least one depression or a cave in said top surface where at least a portion of the depression or the cave has an inner surface; providing a reactive precursor containing at least an alkyl metal compound; and CVD forming from a gas of said reactive precursor at least one metal-containing layer over said top surface and said depression or cave such that the ratio ds/dt of the thickness (ds) of the layer on the inner surafce of the depression or cave and the thickness (dt) of the layer on the top surface is substantially one.Type: GrantFiled: October 22, 1993Date of Patent: October 31, 1995Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Takashi Inujima
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Patent number: 5353140Abstract: A liquid crystal display of the chiral smectic type is caused to have grey scales, by applying a voltage of an intermediate level to the liquid crystal. Within each picture element of the display, there are a number of domains of the liquid crystal layer, some being transparent while the other being opaque rendering grey tone to the picture element.Type: GrantFiled: November 30, 1992Date of Patent: October 4, 1994Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Takashi Inujima, Toshimitsu Konuma, Toshiji Hamatani, Akira Mase, Mitsunori Sakama, Minoru Miyazaki, Kaoru Koyanagi, Toshiharu Yamaguchi
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Patent number: 5296405Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.Type: GrantFiled: August 24, 1992Date of Patent: March 22, 1994Assignee: Semiconductor Energy Laboratory Co.., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
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Patent number: 5203959Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmoltz coils, Ioffe bars, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber. Specifically, the method includes establishing a first magnetic field in the vacuum chamber substantially parallel to the direction of propagation of microwaves emitted in the chamber and establishing a second magnetic field substantially perpendicular to the first magnetic field. A substrate in the chamber for plasma processing is placed so that a surface of the substrate is substantially perpendicular to the direction of the first magnetic field and parallel to the direction of the second.Type: GrantFiled: September 27, 1991Date of Patent: April 20, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 5196954Abstract: A liquid crystal display of the chiral smectic type is caused to have grey scales, by applying a voltage of an intermediate level to the liquid crystal. Within each picture element of the display, there are a number of domains of the liquid crystal layer, some being transparent while the other being opaque rendering grey tone to the picture element.Type: GrantFiled: September 12, 1988Date of Patent: March 23, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Takashi Inujima, Toshimitsu Konuma, Toshiji Hamatani, Akira Mase, Mitsunori Sakama, Minoru Miyazaki, Kaoru Koyanagi, Toshiharu Yamaguchi
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Patent number: 5183511Abstract: A photo CVD apparatus includes a reaction chamber, a light source for radiating light to the inside of the chamber through a light window, and a pair of electrodes disposed in the chamber for glow discharge, one of the electrodes being located on the light window. After deposition by photo CVD, a light window for transmission of UV light is cleaned by plasma etching by virtue of glow discharge taking place between the electrodes. The light source and the electrodes for plasma etching share one power supply for supplying high frequency electric power.Type: GrantFiled: May 12, 1989Date of Patent: February 2, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Shigenori Hayashi, Takashi Inujima, Naoki Hirose
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Patent number: 5176789Abstract: An improved capacitor for a semiconductor memory, and method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.Type: GrantFiled: August 14, 1990Date of Patent: January 5, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Takashi Inujima
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Patent number: 5171710Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.Type: GrantFiled: May 9, 1990Date of Patent: December 15, 1992Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
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Patent number: 5109292Abstract: An improved liquid crystal device immune to contamination of the liquid crystal is shown. The liquid crystal is isolated from ion sources such as glass substrates, transparent electrodes or so on by means of a nitride layer positioned therebetween.Type: GrantFiled: March 28, 1991Date of Patent: April 28, 1992Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Toshiji Hamatani, Akira Mase, Toshiharu Yamaguchi, Mitsunori Sakama, Takashi Inujima
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Patent number: 5084130Abstract: An improved capacitor for a semiconductor memory, and method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.Type: GrantFiled: August 14, 1990Date of Patent: January 28, 1992Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Takashi Inujima
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Patent number: 5079615Abstract: An improved capacitor for a semiconductor memory, and method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.Type: GrantFiled: August 14, 1990Date of Patent: January 7, 1992Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Takashi Inujima