Abstract: A substrate processing apparatus includes a processing tank, a substrate holding section, a bubble supply section, and processing liquid supply sections. The substrate holding section immerses a substrate in a processing liquid stored in the processing tank. The bubble supply section supplies bubbles to the processing liquid from below the substrate. The processing tank includes a first side wall and a second side wall. The processing liquid supply sections include one or more first processing liquid supply sections and one or more second processing liquid supply sections. The one or more first processing liquid supply sections are disposed on a side of the first side wall and supply the processing liquid toward the bubbles. The one or more second processing liquid supply sections are disposed on a side of the second side wall and supply the processing liquid toward the bubbles.

Abstract: Provided is a substrate treating apparatus can be provided that transports substrates reliably and has suppressed manufacturing cost by revising a construction of an apparatus including a batch-type module and a single-wafer-type module. The present invention especially focuses on a process by a substrate treating apparatus for picking up one substrate from substrates aligned in a vertical posture, turning a posture of the substrate to horizontal, and transporting the substrate to a predetermined position in the vicinity of a single-wafer transport region. With the present invention, a process of picking up the substrate and a process of turning the posture of the substrate are performed independently, achieving simplification in construction of a substrate pick-up unit and reduction in positional error generated when the substrate pick-up unit operates.

Abstract: A substrate processing method is executed by a substrate processing apparatus. The substrate processing apparatus includes a processing tank, and a bubble supply pipe disposed in the processing tank. In the substrate processing method, a substrate holding section immerses a substrate in an alkaline processing liquid stored in the processing tank. A bubble supply section supplies bubbles to the alkaline processing liquid from below the substrate with the substrate immersed in the alkaline processing liquid, the bubbles being supplied from a plurality of bubble holes provided in the bubble supply pipe.

Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

Abstract: A substrate treatment method employs a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.

Abstract: A substrate treatment apparatus includes a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.

Abstract: A substrate treatment method employs a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.

Abstract: A substrate treating apparatus for heating a treating solution formed of a chemical and a diluent, and immersing substrates in the treating solution for treatment.

Abstract: A substrate treatment apparatus includes a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.

Abstract: A substrate treating apparatus for heating a treating solution formed of a chemical and a diluent, and immersing substrates in the treating solution for treatment.

Abstract: A substrate treating apparatus for performing etching treatment of a plurality of substrates by immersing the substrates collectively in a heated phosphoric acid solution. When the substrates are fetched from a container, a substrate counting mechanism and a substrate counter count the substrates to be treated collectively. A processing time determining unit determines a processing time according to a count of the substrates, by referring to a relationship between count of substrates and processing time stored in a storage unit. Since the processing time is adjusted according to the number of substrates in a lot to be treated collectively, variations in the amount of etching are suppressed even when the number of substrates differs from one lot to another.

Abstract: Before a lifter holding a group of substrates is immersed in a heated treating solution, the lifter is immersed in the phosphoric acid solution to preheat the lifter to substantially the same temperature as the phosphoric acid solution. The temperature of the phosphoric acid solution is prevented from lowering under the influence of the lifter when the group of substrates held by this lifter is immersed in the phosphoric acid solution. Consequently, variations in treatment occurring among the substrates treated collectively are suppressed.

Abstract: A substrate treating apparatus for heating a treating solution formed of a chemical and a diluent, and immersing substrates in the treating solution for treatment.