Abstract: The present invention provides a sputtering target which is an oxide target. The sputtering target comprises In, Ta and Ti, wherein a content of Ta satisfies Ta/(In+Ta+Ti)=0.08 to 0.45 at %, and a content of Ti satisfies Ti/(In+Ta+Ti)=0.03 to 1.25 at %.

Abstract: An oxide sintered body substantially formed from indium, tin, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% in terms of an atomic ratio of Sn/(In+Sn+Mg), magnesium is contained at a ratio of 0.1 to 2.0% in terms of an atomic ratio of Mg/(In+Sn+Mg), and remainder being indium and oxygen, and wherein a flexural strength of the oxide sintered body is 140 MPa or more when a surface roughness Ra of the oxide sintered body is 0.3 to 0.5 ?m. Provided is an oxide sintered body for use as a sputtering target capable of reducing target cracking and particle generation during deposition, and capable of forming a thin film which exhibits superior amorphous stability and durability.

Abstract: An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.

Abstract: An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 m?cm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided.

Abstract: An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 m?cm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided.

Abstract: Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 m?cm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.

Abstract: Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of 0.4 m?cm or less as a result of crystallizing the film by annealing the film at a temperature of 260° C. or lower. An amorphous ITO thin film for use as a display electrode and the like in flat panel displays is obtained by way of sputter deposition without heating the substrate and without the need of adding water during the deposition. This amorphous ITO film has the property of being crystallized by annealing at 260° C. or lower, which is not such a high temperature, and having low resistivity after crystallization. Also provided are a method of producing the film and a sintered compact for producing the film.

Abstract: An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.

Abstract: Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 m?cm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.