Abstract: A fluid-heating device for heating fluid with a heater includes: a heating portion that is molded so as to cover the surrounding of the heater; and a support body integrally cast into the heating portion, the heating portion being molded in a state in which the heater is supported by the support body in a die for molding the heating portion.

Abstract: A nuclear reaction detection device 100 includes a semiconductor memory 100 arranged in an environment in which radiation is incident, a position information storage unit 210 that stores spatial position information of a semiconductor element in the semiconductor memory 100, a bit position specifying unit 220 that detects that an SEU (Single Event Upset) has occurred in the semiconductor element included in the semiconductor memory 100, and specifies the semiconductor element in which the SEU has occurred, and a position calculating unit 230 that calculates a spatial position in which the SEU has occurred, based on the specified semiconductor element and the spatial position information.

Abstract: A nuclear reaction detection device includes an FPGA (Field Programmable Gate Array) 100 which is arranged in an environment in which particle radiation is incident, and includes a user circuit 101 configured to output a value different from that in a normal state, if an SEU (Single Event Upset) occurs in a semiconductor element included in the FPGA, and an SEF detection unit 210 which detects that an abnormal operation (SEF) has occurred in the user circuit based on the output value from the user circuit 101 of the FPGA 100.

Abstract: A nuclear reaction detection device 100 includes a semiconductor memory 100 arranged in an environment in which radiation is incident, a position information storage unit 210 that stores spatial position information of a semiconductor element in the semiconductor memory 100, a bit position specifying unit 220 that detects that an SEU (Single Event Upset) has occurred in the semiconductor element included in the semiconductor memory 100, and specifies the semiconductor element in which the SEU has occurred, and a position calculating unit 230 that calculates a spatial position in which the SEU has occurred, based on the specified semiconductor element and the spatial position information.

Abstract: A vehicle front structure including: a heat exchanger placed upright in a vehicle front part; a left air guide plate formed upright on a left side of the heat exchanger to extend frontward therefrom; a right air guide plate formed upright on a right side of the heat exchanger to extend frontward therefrom; a drain opening formed at a bottom of only one of the left and right air guide plates; and an air intake port for an engine formed above the heat exchanger, and arranged closer to the one of the left and right air guide plates in which the drain opening is formed, from a center of the heat exchanger in a left-right direction.

Abstract: A vehicle front structure including: a heat exchanger placed upright in a vehicle front part; a left air guide plate formed upright on a left side of the heat exchanger to extend frontward therefrom; a right air guide plate formed upright on a right side of the heat exchanger to extend frontward therefrom; a drain opening formed at a bottom of only one of the left and right air guide plates; and an air intake port for an engine formed above the heat exchanger, and arranged closer to the one of the left and right air guide plates in which the drain opening is formed, from a center of the heat exchanger in a left-right direction.

Abstract: A method for bleaching a cloth dyed with an indigo dye by using a processing solution containing a bleaching agent, wherein said processing solution is an aqueous solution of a dichloroisocyanuric acid salt, is disclosed. According to the invention, the degree of bleaching can be easily controlled and, after the bleaching, neither yellowing nor deterioration of fibers occurs.

Abstract: Products having a relatively large thickness such as optical lenses for various industrial applications are molded by an injection molding machine by advancing the screw by operating an injection cylinder for filling metered quantity of a molten resin into a metal mold. The screw is rotated while it is being advanced. A plurality of position setters are provided along the stroke of the screw and their outputs are respectively compared with the output of a screw position detector by using comparators. The outputs of the comparators are used to effect a program control of screw rotation in multistages. According to a modified embodiment, during the filling step effected by screw rotation, the injection speed is varied stepwisely. The injection speed is reduced to zero for a short interval and then increased again. The number of revolutions of the screw, however, is maintained at a constant value until the injection speed is increased again.

Abstract: In a vent type injection molding machine of the type comprising a heating cylinder, injection nozzle means having a vent port and connected to the front end of the heating cylinder and a reciprocatable screw for metering a predetermined quantity of resin to be injected, the injection nozzle means comprises a first injection nozzle connected to the heating cylinder, a second injection nozzle coaxial with the first injection nozzle, a spring for urging the second injection nozzle against a stationary metal mold and a housing surrounding the first and second injection nozzles. The vent port is provided through the housing at a point communicating with a space in the housing between the first and second injection nozzles.

Abstract: For an injection molding machine a nozzle touch plate is provided which is slidable on a surface of a stationary plate opposite to the surface to which a metal mold is secured. The nozzle touch plate is brought to a position for preventing advancement of an injection nozzle into contact with the metal mold. In this position, the injection nozzle is brought into contact with the nozzle touch plate so that resin remaining in the injection cylinder is purged against the plate at the time of changing the type or color of the resin whereby the resin is prevented from being injected into the metal mold. After purging the nozzle touch plate is retracted to permit injection molding of new resin.

Abstract: A measuring electrode device comprises a pH electrode arranged within an outer casing and having a pH sensitive member in contact with an electrolyte housed in the outer casing. The electrolyte reacts with a predetermined gas in a liquid to be inspected and varies its pH. The pH sensitive member includes a semiconductor substrate and a pH sensitive membrane formed on the substrate and in contact with the electrolyte. The pH sensitive membrane is formed of at least one element selected from the group consisting of silicon nitride, aluminum oxide and tantalum pentoxide. A potential difference is produced between the pH sensitive membrane and the electrolyte in accordance with the variation of the pH of the electrolyte. Thus, a potential difference is produced between the pH electrode and a reference electrode according to the variation of the pH of the electrolyte.

Abstract: A selective ion sensitive electrode is so constructed that an ion exchanger sensitive to a specific ion is formed on a metal electrode, an electric conductive resin electrode or a chlorinated metal electrode to which a signal wire is connected so as to maintain a stable electric connection between the signal wire and the ion exchanger over a long period of time. A layer of a silane coupling agent is used between the electrode member and ion exchanger.

Abstract: An ion selective electrode having a silicon wafer substrate secured to one end of a tube made of insulating material by an adhesive agent and an ion sensitive film applied on the outer surface of silicon wafer substrate is disclosed. In order to prevent a portion of a side edge of silicon wafer substrate from being exposed to a sample liquid to be measured, the side edge of silicon wafer substrate is tapered and the ion sensitive film is applied on the tapered side edge as well as on the outer surface of silicon wafer substrate. The tapered side edge may be simply formed by effecting an anisotropic etching for a silicon wafer.