Abstract: A capacitive transducer includes a substrate having an opening in a surface thereof, a back plate facing the opening in the substrate, a vibration electrode film facing the back plate across a space, the vibration electrode film being deformable to have a deformation converted into a change in capacitance between the vibration electrode film and the back plate, the vibration electrode film having a through-hole as a pressure relief hole, and a protrusion integral with and formed from the same member as the back plate, the protrusion being placeable in the pressure relief hole before the vibration electrode film deforms. The pressure relief hole and the protrusion have a gap therebetween defining an airflow channel as a pressure relief channel. The protrusion has a through-hole extending from a distal portion of the protrusion to a portion of the back plate opposite to the protrusion.

Abstract: A capacitive transducer includes a substrate having an opening in a surface thereof, a back plate facing the opening in the substrate, a vibration electrode film facing the back plate across a space, the vibration electrode film being displaceable to have a displacement converted into a change in capacitance between the vibration electrode film and the back plate, an airflow channel defined by a gap between a protrusion integral with the back plate and a part of the vibration electrode film, the airflow channel being configured to increase an area of air flow when the vibration electrode film deforms under pressure to move relative to the protrusion integral with the back plate and relieve the pressure applied to the vibration electrode film to serve as a pressure relief channel, and an extension formed at a periphery of a hole in the vibration electrode film defining the pressure relief channel.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane, provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane, provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: An exhaust pipe of an engine includes a crank-shaped pipe portion having a first bend and a second bend which guide exhaust gas to a mixer, and a straight pipe portion which is continuous with the second bend. The mixer is arranged in the straight pipe portion. An injector is attached to a portion of the second bend which faces the mixer. The injector has an injection axis which extends in a longitudinal direction of the straight pipe portion so as to point toward the mixer. A guide which guides a part of the exhaust gas from the first bend toward the injector is provided inside the crank-shaped pipe portion.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: An acoustic sensor adapted to convert acoustic vibration to a change in an electrostatic capacitance to detect the acoustic vibration is provided. The acoustic sensor includes a semiconductor substrate, a back plate including a fixed plate arranged to face a surface of the semiconductor substrate, and a fixed electrode film arranged on the fixed plate, and a vibrating electrode film arranged to face the back plate with a space formed therebetween. The vibrating electrode film includes a plate-like vibrating member that vibrates in response to sound pressure. The vibrating electrode film is fixed to the back plate with a fixing unit thereof including one or more fixing portions each including a fixing protruding end that is arranged on a protruding end of a leg portion protruding from an edge of the vibrating member. The vibrating member has an edge portion surrounding at least a part of the fixing protruding end.

Abstract: An acoustic sensor is provided for improving shock resistance performance, along with a method for manufacturing the acoustic sensor. In the acoustic sensor, a fixing plate is provided by a semiconductor manufacturing process, a frame wall has a curved shape in at least a portion of the periphery of the fixing plate, the frame wall being coupled to the semiconductor substrate. A sacrifice layer removed from the inner side of the fixing plate in the manufacturing process remains at least on a portion of the inner side of the frame wall. Roughness of the remaining sacrifice layer is smaller than roughness of a sound shape reflecting structure in which a shape similar to the external shape of sound holes is repeated. Roughness of the sound shape reflecting structure is formed when removing the sacrifice layer using etching liquid supplied from the plurality of sound holes in the semiconductor manufacturing process.

Abstract: An acoustic transducer includes a slit having higher passage resistance than in conventional structures and having a lower rate of decrease in the passage resistance than in conventional structures when, for example, the vibration electrode plate warps. The acoustic transducer includes a stationary electrode plate, and a vibration electrode plate facing the stationary electrode plate with a space between the electrode plates. The vibration electrode plate includes a slit that allows sound to pass through. The vibration electrode plate includes a resistance increasing section including at least one pair of high-resistance surfaces that constitute side surfaces of the slit in a width direction thereof, and are thicker than a middle portion of the vibration electrode plate.

Abstract: Diaphragm 33 is provided on a top surface of silicon substrate 32, and plate unit 39 is fixed to the top surface of silicon substrate 32 so as to cover the movable electrode film with a gap. Plate unit 39 is made of an insulating material. Fixed electrode film 40 is formed on a bottom surface of plate unit 39, and diaphragm 33 and fixed electrode film 40 constitute a capacitor. In an area around plate unit 39, a whole outer peripheral edge of the top surface of silicon substrate 32 is exposed from plate unit 39. On the top surface of the substrate 32, insulating sheet 47 made of the insulating material is formed in a part of an area exposed from plate unit 39, and electrode pad 48 electrically connected to diaphragm 33 and electrode pad 49 electrically connected to fixed electrode film 40 are provided on a top surface of insulating sheet 47.

Abstract: A silicon substrate has a chamber that penetrates vertically. A diaphragm is formed on the upper surface of the silicon substrate so as to cover the upper portion of the chamber. Also, a back plate is provided above the silicon substrate so as to cover the diaphragm, and a fixed electrode plate is provided on the lower surface of the back plate in opposition to the diaphragm. Multiple acoustic holes, which penetrate vertically and are for allowing the passage of acoustic vibration, are formed in the back plate (28) and the fixed electrode plate. Multiple through-holes that have a smaller opening area than the acoustic holes are formed in a large displacement region of the diaphragm.

Abstract: A diaphragm is arranged on the upper surface of a silicon substrate so as to cover a chamber in the silicon substrate. Multiple anchors are provided on the upper surface of the silicon substrate, and the lower surfaces of corner portions of the diaphragm are supported by the anchors. Also, a fixed electrode plate is provided above the diaphragm with an air gap therebetween. In a view from a direction perpendicular to the upper surface of the silicon substrate, the entire length of the outer edge of the diaphragm located between adjacent anchors is located outward of a line segment that circumscribes the edges of the adjacent anchors on the side distant from the center of the diaphragm. Also, one or two or more through-holes are formed in the diaphragm in the vicinity of the anchors.

Abstract: A capacitance type sensor has a semiconductor substrate having a vertically opened penetration hole, a movable electrode film arranged above the penetration hole such that a periphery portion opposes to a top surface of the semiconductor substrate with a gap provided, and a fixed electrode film arranged above the movable electrode film with a gap with respect to the movable electrode film. A concave portion having at least a part thereof formed by an inclined surface is provided in the top surface of the semiconductor substrate in a region of the top surface of the semiconductor substrate which overlaps the periphery portion of the movable electrode film.

Abstract: A capacitance type sensor has a substrate, a vibration electrode plate formed over the substrate, a back plate formed over the substrate so as to cover the vibration electrode plate, and a fixed electrode plate provided on the back plate so as to be opposite to the vibration electrode plate. At least one of the vibration electrode plate and the fixed electrode plate is separated into a plurality of regions, each of the plurality of regions being formed with a sensing section including the vibration electrode plate and the fixed electrode plate. A barrier electrode is provided between respective sensing sections of at least one adjacent pair of regions of the plurality of regions to prevent signal interference between the respective sensing sections.

Abstract: An acoustic transducer has a substrate having an opening in an upper surface thereof, a vibration electrode plate disposed above the substrate, and having an outer edge thereof facing the upper surface of the substrate with a gap therebetween, a fixed electrode plate facing the vibration electrode plate, and a plurality of projections protruding on a lower surface of the outer edge of the vibration electrode plate. The vibration electrode plate covers an upper side of the opening. The plurality of projections are disposed so as to not be positioned along a straight line or a curved line parallel to an edge of the opening in at least a part of one or at least two arrays formed on the lower surface of the outer edge.

Abstract: An acoustic transducer has a substrate having a cavity that is open at a top of the substrate, a vibration electrode film provided above the substrate so as to cover the cavity, and a fixed electrode film provided a distance above the vibration electrode film. A gap is formed between an upper surface of the substrate and a lower surface of the vibration electrode film around the cavity. In the gap across which the upper surface of the substrate and the lower surface of the vibration electrode film face each other, a narrow portion of the gap that is narrower than another portion of the gap is disposed. The narrow portion of the gap extends linearly.

Abstract: An acoustic sensor adapted to convert acoustic vibration to a change in an electrostatic capacitance to detect the acoustic vibration is provided. The acoustic sensor includes a semiconductor substrate, a back plate including a fixed plate arranged to face a surface of the semiconductor substrate, and a fixed electrode film arranged on the fixed plate, and a vibrating electrode film arranged to face the back plate with a space formed therebetween. The vibrating electrode film includes a plate-like vibrating member that vibrates in response to sound pressure. The vibrating electrode film is fixed to the back plate with a fixing unit thereof including one or more fixing portions each including a fixing protruding end that is arranged on a protruding end of a leg portion protruding from an edge of the vibrating member. The vibrating member has an edge portion surrounding at least a part of the fixing protruding end.

Abstract: An acoustic sensor is provided for improving shock resistance performance, along with a method for manufacturing the acoustic sensor. In the acoustic sensor, a fixing plate is provided by a semiconductor manufacturing process, a frame wall has a curved shape in at least a portion of the periphery of the fixing plate, the frame wall being coupled to the semiconductor substrate. A sacrifice layer removed from the inner side of the fixing plate in the manufacturing process remains at least on a portion of the inner side of the frame wall. Roughness of the remaining sacrifice layer is smaller than roughness of a sound shape reflecting structure in which a shape similar to the external shape of sound holes is repeated. Roughness of the sound shape reflecting structure is formed when removing the sacrifice layer using etching liquid supplied from the plurality of sound holes in the semiconductor manufacturing process.

Abstract: The present disclosure is directed to an acoustic transducer configured to detect a sound wave according to changes in capacitances between a vibrating electrode and a fixed electrode. At least one of the vibrating electrode and the fixed electrode being divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting electrical signals. The disclosure includes a digital interface circuit coupled to the divided electrodes. The circuit includes a recombination stage, which supplies a mixed signal by combining the first digital processed signal and the second digital processed signal with a respective weight that is a function of a first level value of the first processed signal. An output stage is included, which supplies, selectively and alternatively, a first processed signal, a second processed signal, or a mixed signal.

Abstract: A capacitance sensor has a substrate, a vibration electrode plate formed over an upper side of the substrate, a back plate formed over the upper side of the substrate to cover the vibration electrode plate, and a fixed electrode plate arranged on the back plate facing the vibration electrode plate. At least one of the vibration electrode plate and the fixed electrode plate is divided into a plurality of regions. A sensing unit configured by the vibration electrode plate and the fixed electrode plate is formed in each of the divided regions. The plurality of sensing units output a plurality of signals having different sensitivities. At least some sensing units of the sensing units have vibration electrode plates having areas different from the areas of the vibration electrode plates in the other sensing units.