Abstract: An ultrasonic wave generation device including: an ultrasonic wave generation source; an ultrasonic wave condensation part; and a waveguide. The ultrasonic wave condensation part has a first reflection surface opposed to the ultrasonic wave generation source and a second reflection surface opposed to the first reflection surface. The first reflection surface reflects the ultrasonic wave, generated from the ultrasonic wave generation source, toward the second reflection surface. The second reflection surface reflects the ultrasonic wave, which has been reflected by the first reflection surface, toward the waveguide so as to introduce the ultrasonic wave into the waveguide. The waveguide protrudes from the first reflection surface to a side opposite the second reflection surface. A recessed portion is formed from the first reflection surface to the second reflection surface side along an outer circumferential surface of the waveguide.

Abstract: A piezoelectric element having a piezoelectric body and an electrode in contact with the piezoelectric body: the piezoelectric body being formed of a lead-free piezoelectric ceramic composition which includes a primary phase formed of an alkali niobate-based perovskite oxide represented by a compositional formula (A1aM1b)c(Nbd1Mnd2Tid3Zrd4Hfd5)O3+e (wherein element A1 represents at least one species among the alkali metals; element M1 represents at least one species among Ba, Ca, and Sr; the following conditions: 0<a<1, 0<b<1, a+b=1, 0.80<c<1.10, 0<d1<1, 0<d2<1, 0<d3<1, 0?d4<1, 0?d5<1, and d1+d2+d3+d4+d5=1, are satisfied; and e represents a value showing the degree of deficiency or excess of oxygen) and which satisfies the condition: b/(d3+d4+d5)?1, and the electrode containing a base metal as a main component.

Abstract: The present technology provides a positive electrode active material capable of more sufficiently preventing deterioration in cycle characteristics even when the positive electrode active material has a coating based on a metal alkoxide on its surface. The present technology relates to a positive electrode active material for a battery including a positive electrode active material core material and a coating formed on a surface of the positive electrode active material core material, wherein the coating is an organic-inorganic hybrid coating formed of a reactant including at least a first metal alkoxide containing no metal atom-carbon atom bond in one molecule and a second metal alkoxide containing two or more metal atom-carbon atom bonds in one molecule.

Abstract: A lead-free piezoelectric ceramic composition including an alkali niobate/tantalate perovskite oxide main phase having piezoelectric properties and a different metal oxide. The mole ratio (Na/K) between Na (sodium) and K (potassium) in the main phase is 0.40<(Na/K)<3.0. The main phase has a crystal structure in which (i) first spots corresponding to a primitive lattice period and (ii) second spots corresponding to the lattice period two times the primitive lattice period and being weaker than the first spots appear in an electron beam diffraction image entering from the <100> direction with the main phase represented as a pseudo-cubic crystal system. Also, the area ratio of a crystal phase reflecting the second spots in the main phase is 33% or less, and the maximum grain size of crystals reflecting the second spots in the main phase is 25 nm or less.

Abstract: A lead-free piezoelectric ceramic composition including an alkali niobate/tantalate perovskite oxide main phase having piezoelectric properties and a different metal oxide subphase. The mole ratio (Na/K) between Na (sodium) and K (potassium) in the main phase assumes a value in a range represented by 0.40<(Na/K)<3.0. The main phase has a crystal structure in which (i) first spots corresponding to a primitive lattice period and (ii) second spots corresponding to the lattice period two times the primitive lattice period and being weaker than the first spots appear in an electron beam diffraction image entering from the <100> direction with the main phase represented as a pseudo-cubic crystal system.

Abstract: A lead-free piezoelectric ceramic composition includes a first crystal phase made of an alkali niobate/tantalate type perovskite oxide having piezoelectric properties, and a second crystal phase made of an M-Ti—O spinel compound (where the element M is a monovalent to quadrivalent element).

Abstract: A lead-free piezoelectric ceramic composition including an alkali niobate/tantalate perovskite oxide main phase having piezoelectric properties and a different metal oxide subphase. The mole ratio (Na/K) between Na (sodium) and K (potassium) in the main phase assumes a value in a range represented by 0.40<(Na/K)<3.0. The main phase has a crystal structure in which (i) first spots corresponding to a primitive lattice period and (ii) second spots corresponding to the lattice period two times the primitive lattice period and being weaker than the first spots appear in an electron beam diffraction image entering from the <100> direction with the main phase represented as a pseudo-cubic crystal system.

Abstract: A lead-free piezoelectric ceramic composition including an alkali niobate/tantalate perovskite oxide main phase having piezoelectric properties and a different metal oxide. The mole ratio (Na/K) between Na (sodium) and K (potassium) in the main phase is 0.40<(Na/K)<3.0. The main phase has a crystal structure in which (i) first spots corresponding to a primitive lattice period and (ii) second spots corresponding to the lattice period two times the primitive lattice period and being weaker than the first spots appear in an electron beam diffraction image entering from the <100> direction with the main phase represented as a pseudo-cubic crystal system. Also, the area ratio of a crystal phase reflecting the second spots in the main phase is 33% or less, and the maximum grain size of crystals reflecting the second spots in the main phase is 25 nm or less.

Abstract: A connection portion connecting a center electrode and a terminal metal fixture together in a through hole of the insulator includes a resistor and a magnetic substance structure including a magnetic substance and a conductor and being disposed on a leading end side or a rear end side of the resistor while being positioned away from the resistor. The connection portion further includes a first conductive sealing portion, a second conductive sealing portion and a third conductive sealing portion. The first conductive sealing portion is disposed on a leading end side of a first member and is in contact therewith. The second conductive sealing portion is disposed between the first member and a second member and is in contact with the first and second members. The third conductive sealing portion is disposed on a rear end side of the second member and is in contact therewith.

Abstract: A connection portion connecting a center electrode and a terminal metal fixture together in a through hole of the insulator includes a resistor and a magnetic substance structure including a magnetic substance and a conductor and being disposed on a leading end side or a rear end side of the resistor while being positioned away from the resistor. The connection portion further includes a first conductive sealing portion, a second conductive sealing portion and a third conductive sealing portion. The first conductive sealing portion is disposed on a leading end side of a first member and is in contact therewith. The second conductive sealing portion is disposed between the first member and a second member and is in contact with the first and second members. The third conductive sealing portion is disposed on a rear end side of the second member and is in contact therewith.

Abstract: A lead-free piezoelectric ceramic composition includes a first crystal phase made of an alkali niobate/tantalate type perovskite oxide having piezoelectric properties, and a second crystal phase made of an M-Ti—O spinel compound (where the element M is a monovalent to quadrivalent element).

Abstract: Disclosed are a dielectric resonator having simple configuration applicable to a multiple mode with no electrical signal transmission loss, and a method of controlling a resonance state (coupling mode) in the dielectric resonator. The dielectric resonator includes a cylindrical or polygonal external conductor, and a dielectric resonant element arranged at the substantially center of the external conductor. A notched portion is formed at a part of the dielectric resonant element so as to control the resonance state of the dielectric resonator.

Abstract: Disclosed are a dielectric resonator having simple configuration applicable to a multiple mode with no electrical signal transmission loss, and a method of controlling a resonance state (coupling mode) in the dielectric resonator. The dielectric resonator includes a cylindrical or polygonal external conductor, and a dielectric resonant element arranged at the substantially center of the external conductor. A notched portion is formed at a part of the dielectric resonant element so as to control the resonance state of the dielectric resonator.

Abstract: A dielectric material containing at least one of Ca and Sr, Ti, Al, at least one of Nb and Ta, and O, wherein these elements fulfill the following four requirements when represented by a compositional formula, aM1O-bTiO2-(½)cAl2O3-(½)dM22O5 wherein M1 represents the at least one of Ca and Sr; M2 represents the at least one of Nb and Ta; and a, b, c and d represent each a molar ratio, provided that a+b+c+d=1: 0.436<a?0.500; 0.124<b?0.325; 0.054<c?0.150; and 0.170<d<0.346.

Abstract: A dielectric material containing at least one of Ca and Sr, Ti, Al, at least one of Nb and Ta, and O, wherein these elements fulfill the following four requirements when represented by a compositional formula, aMlO-bTiO2-(½)cAl2O3-(½)dM22O5 wherein M1 represents the at least one of Ca and Sr; M2 represents the at least one of Nb and Ta; and a, b, c and d represent each a molar ratio, provided that a+b+c+d=1: 0.436<a?0.500; 0.124<b?0.325; 0.054<c?0.150; and 0.170<d<0.346.

Abstract: A dielectric composition is based on a BaO—MgO—Nb2O5 system material (BMN system material) having a dielectric constant, &egr;, of about 30, a large Q-value (no-load quality coefficient) and a comparatively small absolute value of the temperature coefficient (&tgr;f) of its resonance frequency but containing no expensive Ta. The dielectric material has a composite perovskite crystal structure as the main crystal phase, wherein a predetermined amount of KNbO3 is added to a BMN system material. The high frequency characteristics can be further improved by partially replacing Nb with Sb and partially replacing the B site of the perovskite crystal structure with Sn.

Abstract: A dielectric composition is based on a BaO—MgO—Nb2O5 system material (BMN system material) having a dielectric constant, &egr;, of about 30, a large Q-value (no-load quality coefficient) and a comparatively small absolute value of the temperature coefficient (&tgr;f) of its resonance frequency but containing no expensive Ta. The dielectric material has a composite perovskite crystal structure as the main crystal phase, wherein a predetermined amount of KNbO3 is added to a BMN system material. The high frequency characteristics can be further improved by partially replacing Nb with Sb and partially replacing the B site of the perovskite crystal structure with Sn.

Abstract: A 1:1 projection aligner includes a first optical system for irradiating a light beam, emitted from a light source, on a wafer through a mask; and a second optical system for irradiating a light beam, emitted from the same light source, as that of the first optical system for auto-alignment of the wafer. The aligner further includes a timer for measuring an elapsed time and outputting a signal after a specified time has elapsed, first and second shutters for shielding light paths of light beams from the first and second optical systems, and drive units for driving the shutters on the basis of a signal from the timer. In the case of a failure of the auto-alignment operation, the shutters are closed for preventing the wafer from being irradiated with a light beam for a long time, thereby preventing generation of a defect such as unevenness of exposure. An alarm is also outputted for informing an operator of the failure of the auto-alignment.