Abstract: An electronic device receives attribute information for a first plurality of pipes, a second plurality of pipes, and a plurality of supply-side structures. The attribute information for the first plurality of pipes includes, for each pipe, location information and a value for a characteristic. The attribute information for the second plurality of pipes includes, for each pipe, location information, and does not include values for the characteristic. The attribute information for the plurality of supply-side structures includes location information.

Abstract: To prevent delay in startup time while ensuring program integrity at startup of an embedded system. In a startup method for an embedded system according to the present disclosure, a processor, which is provided in the embedded system and includes a main memory unit, and a nonvolatile storage unit storing a snapshot image based on a state of the main memory unit during execution of at least a first program, performs falsification verification for the snapshot image at startup, and, if being normal is confirmed by the falsification verification, executes the first program restored on the main memory unit from the snapshot image.

Abstract: A method is provided for determining, in a liquid ejection apparatus, a state of a liquid ejection from an ejection port. The liquid ejection apparatus includes the ejection port configured to eject a liquid, a substrate comprising an electrothermal conversion element configured to generate heat for ejecting the liquid from the ejection port, and a temperature detection unit configured to detect temperature information on the substrate. The method includes performing a first comparison process to compare the temperature information on the substrate detected at a first timing by the temperature detection unit with a first threshold value, and performing a second comparison process to compare the temperature information on the substrate detected at a second timing by the temperature detection unit with a second threshold value.

Abstract: A semiconductor light-receiving device includes an indium phosphide substrate, a first III-V compound semiconductor layer of n-type, a second III-V compound semiconductor layer of p-type, an optical absorption layer disposed between the first III-V compound semiconductor layer and the second III-V compound semiconductor layer, a hole barrier layer disposed between the first III-V compound semiconductor layer and the optical absorption layer, and an electron barrier layer disposed between the second III-V compound semiconductor layer and the optical absorption layer. The first III-V compound semiconductor layer is disposed between the indium phosphide substrate and the optical absorption layer.

Abstract: In this stator armature, a first leg portion has a first surface side part that has a thickness in a radial direction smaller than a thickness of a first leg portion body portion in the radial direction, a second leg portion has a second surface side part that has a thickness in the radial direction smaller than a thickness of a second leg portion body portion in the radial direction, and in the radial direction, a thickness of a joint portion is equal to or more than a thickness of a part other than the joint portion.

Abstract: A semiconductor photodetector includes an optical absorption layer. The optical absorption layer includes a plurality of unit structures stacked in a first direction, each of the plurality of unit structures includes a laminate and a gallium arsenide antimonide layer, the laminate includes a first gallium arsenide layer including j gallium arsenide monolayers, a first indium arsenide layer including m indium arsenide monolayers, k stacked structures, and a second gallium arsenide layer including (j?1) gallium arsenide monolayers, each of the k stacked structures includes a third gallium arsenide layer including n gallium arsenide monolayers, and a second indium arsenide layer including m indium arsenide monolayers, j, m, and n are each an integer of 1 or more, and k is an integer of 0 or more.

Abstract: A semiconductor photodetector includes a first group III-V semiconductor layer of a first conductivity type; a second group III-V semiconductor layer of a second conductivity type; and an optical absorption layer disposed between the first group III-V semiconductor layer and the second group III-V semiconductor layer in a first direction. The optical absorption layer includes a plurality of unit structures stacked in the first direction. Each of the plurality of unit structures includes a gallium arsenide layer, an indium arsenide layer, and a gallium arsenide antimonide layer. The gallium arsenide layer and the indium arsenide layer each have a thickness smaller than a thickness of the gallium arsenide antimonide layer.

Abstract: A detection device includes a base plate, a piezoelectric element disposed on the base plate with an insulating member therebetween and generating a pressing force corresponding to an electromotive force, an electrostatic capacitance sensor detecting an electrostatic capacitance of the base plate, a wiring member (first wiring member) electrically connected to the piezoelectric element, and a wiring member (second wiring member) electrically connected to the electrostatic capacitance sensor.

Abstract: A particle analyzer (100) includes: a light source that emits excitation light (EL1) including light having a wavelength of 400 nm or less; a lens structure (41) that collects excitation light (EL1) at a predetermined position (51s) in a flow path (53); a detection unit (7) that detects light (FL) emitted from a particle as the particle (51) flowing through the predetermined position is excited by the excitation light (EL1); and a processing unit (120) that processes detection data acquired by the detection unit (7). The lens structure (41) includes a plurality of lenses (411) arranged along an optical axis of the excitation light (EL1); and a lens frame (412) holding the plurality of lenses (411). At least one (G12) of the plurality of lenses (411) is positioned in the lens frame (412) by abutting on a lens adjacent to the lens.

Abstract: Provided is a liquid ejection head capable of suppressing a decrease in printing quality. To this end, circulation efficiency J at an ejection orifice on a downstream side in a flow direction in a channel is set high.

Abstract: Systems and methods for automated or computer assisted planning of pipe replacement projects includes searching a database of pipe segments each having assigned or calculated failure risk parameters. The searching algorithm looks for connected pipe segments falling within a customer's specified project size and identifies potential projects having a relatively high combined high failure risk.

Abstract: In this armature, between the first segment conductor and the second segment conductor that are joined to each other in the joint portion, a first clearance portion is provided between the tip end portion of the first leg portion and the second leg portion body portion in the axial direction, and a second clearance portion is provided between the tip end portion of the second leg portion and the first leg portion body portion in the axial direction.

Abstract: A quantum cascade laser includes a substrate having a group III-V compound semiconductor and a core region that is provided on the substrate and that includes a group III-V compound semiconductor. The core region includes a plurality of unit structures that are stacked on top of one another. Each of the plurality of unit structures includes an active layer and an injection layer. The injection layer includes at least one strain-compensated layer including a first well layer and a first barrier layer and at least one lattice-matched layer including a second well layer and a second barrier layer. The first well layer has a lattice constant larger than a lattice constant of the substrate. The first barrier layer has a lattice constant smaller than the lattice constant of the substrate. The second well layer and the second barrier layer each have a lattice constant that is lattice-matched to the substrate.

Abstract: A slope gain equalizer that corrects a slope of a gain characteristic of an optical signal in a predetermined wavelength bandwidth. An interference filter, which allows insertion losses in a predetermined wavelength region to be inclined in opposite directions between a transmitting direction and a reflecting direction from a short wavelength side to a long wavelength side, is arranged between a dual-core fiber collimator and a single-core fiber collimator facing each other on an optical axis. An optical signal of a predetermined bandwidth inputted from a first or second optical fiber held by the dual-core fiber collimator is reflected by the interference filter and outputted from the second or the first optical fiber. An optical signal inputted from a third optical fiber held by the first optical fiber or the single-core fiber collimator is transmitted through the interference filter and outputted from the third or the first optical fiber.

Abstract: An acoustic device includes: a first vibrating body having a first vibration frequency; a second vibrating body having a second vibration frequency; and a base material having a disposition surface on which the second vibrating body is disposed. In a plan view of the base material, the first vibrating body and the second vibrating body are arranged in an in-plane direction of the disposition surface.

Abstract: The liquid ejection head includes a substrate having a first surface and a second surface which is a back surface of the first surface, a plurality of individual channels provided on the first surface, communicating with the ejection port, and recirculating the liquid, and a circulation channel communicating with the plurality of individual channels and recirculating the liquid. The circulation channel is provided on the first surface and has a connection region communicating with the outlet ports of the plurality of individual channels, a supply through-hole penetrating the substrate and supplying the liquid to the connection region, and a correct through-hole penetrating the substrate and correcting the liquid from the connection region.

Abstract: An improved solution accurately predicts of an underground pipe's likelihood of leaking. A data-driven approach uses a combination of information acquisition, classification, regression and/or machine learning. The replacement of underground pipes can be prioritized. Pipe data is inputted and processed. Potential features within the cleaned data is used in pipe life of failure prediction models. The importance of the potential features is ranked. The most important features are extracted and applied to a likelihood of failure model that is created based on historical data and machine learning. Future likelihood of failure for each pipe in the network of pipes can be predicted using the model.

Abstract: This invention relates to a kit or device for detection of hippocampal atrophy comprising a nucleic acid(s) capable of specifically binding to particular hippocampal atrophy marker miRNA(s) or to complementary strand(s) thereof, and a method for detecting hippocampal atrophy comprising measuring such miRNA(s) in vitro.

Abstract: A glass member for a housing of an electronic device may include an aluminosilicate glass substrate defining a first surface of the glass member, the first surface having a first surface roughness, a fused composite coating bonded to a portion of the aluminosilicate glass substrate and defining a second surface of the glass member, the second surface having a second surface roughness greater than the first surface roughness, a first ion-exchanged layer extending into the glass member and through the fused composite coating, and a second ion-exchanged layer extending into the glass member from the first surface. The fused composite coating may include an amorphous glass matrix and a crystalline material dispersed in the amorphous glass matrix.