Abstract: The present invention is directed to photonic devices which emit or absorb light with a wavelength shorter than that GaN photonic devices can emit or absorb. The devices according to the present invention are formed using molybdenum oxide of a high purity as a light emitting region or a light absorbing region. New inexpensive photonic devices which emit light with a wavelength from blue to deep ultraviolet rays are realized. The devices according to the present invention can be formed at a temperature relating low such as 700° C.

Abstract: An optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS can be provided. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode. The piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

Abstract: The present invention is directed to photonic devices which emit or absorb light with a wavelength shorter than that GaN photonic devices can emit or absorb. The devices according to the present invention are formed using molybdenum oxide of a high purity as a light emitting region or a light absorbing region. New inexpensive photonic devices which emit light with a wavelength from blue to deep ultraviolet rays are realized. The devices according to the present invention can be formed at a temperature relating low such as 700° C.

Abstract: The present invention directed to photonic devices which emit or absorb light with a short wavelength formed using molybdenum oxide grown on substrates which consist of materials selected from element semiconductors, III-V or II-IV compound semiconductors, IV compound semiconductors, organic semiconductors, metal crystal and their derivatives or glasses. New inexpensive photonic devices which emit light with a wavelength from blue to deep ultraviolet rays are realized.

Abstract: The present invention relates to semiconductor electronic devices including molybdenum oxide formed on substrates which consist of materials which are used in known semiconductor electronic devices. The present invention relates to also a new method to fabricate said electronic devices on substrates made of materials which have been used in usual electronic and photonic devices. Suitable substrates consist of materials such as element semiconductors such as silicon and germanium, III-V compound semiconductors such as gallium arsenide and gallium phosphide, II-IV compound semiconductors such as zinc oxide, IV compound semiconductors, organic semiconductors, metal crystals and their derivatives or glasses.

Abstract: The present invention is directed to a new semiconductor film comprising of metal oxide grown on a substrate and its fabrication method. The metal oxide is comprised of molybdenum oxide which is very useful to fabricate electronic devices with high withstand voltages and photonic and electronic hostile-environment devices. An important aspect of the present invention is that the molybdenum oxide film is formed on a substrate made of material which has been used in usual electronic and photonic devices. The most popular material is silicon. Another important aspect of the present invention is a new method to form a molybdenum oxide film on a substrate.

Abstract: The present invention is to provide an improved surge protector device. The present invention's surge protector device basically has a plurality of metal bars which are combined to a single body by a continuous high-resistive film of semiconductor crystal so that there is no gap between adjacent metal bars; and electrodes formed on the endmembers of the said metal bars composing the single body. Thus, the present invention's surge protector device is fabricated so as to have no air gap between adjacent ones of the metal bars. As a result, the present invention's protector device can operate in such a way that the surge protector device changes from a non-conductive state to a conductive state due to breakdown in depletion region accompanying the semiconductor crystal when the voltage across the electrodes exceeds a threshold voltage because of a surge.

Abstract: The invention is to provide an optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode; wherein the piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

Abstract: The present invention is directed to electronic devices comprising high-purity molybdenum oxide in at least a part of the devices. The devices according to the present such a bipolar transistor, a field effect transistor and a thyristor have a high withstand voltage. The present invention is directed also hostile-environment electron devices formed using high-purity molybdenum oxide. The devices according the present invention can be fabricated at a relatively lower temperature such as 700° C. than that at which GaN or SiC devices are fabricated, the at is a temperature higher than 1000° C.

Abstract: The present invention is directed to electronic devices comprising high-purity molybdenum oxide in at least a part of the devices. The devices according to the present invention such as a bipolar transistor, a field effect transistor and a thyristor have a high withstand voltage. The present invention is directed also hostile-environment electron devices formed using high-purity molybdenum oxide. The devices according to the present invention can be fabricated at a relatively lower temperature such as 700° C. than that at which GaN or SiC devices are fabricated, that is a temperature higher 1000° C.

Abstract: The present invention is directed to a main element of a surge protector device and its fabrication method which uses breakdown phenomenon of a single high resistive film. A breakdown voltage and a place where breakdown occurs can be precisely controlled. The surge protector device changes from its non-conductive state to conductive state very quickly when a surge is induced and returns quickly to the non-conductive state when a surge is removed if said element is surrounded by oxidizing agent. The main element of the surge protector device of the present invention has a single high resistive film on a single metal bar. The high resistive film has a part or parts where electric field concentrates when a surge induced. A breakdown voltage can be controlled precisely by controlling a size including a thickness of the high resistive film of the part. The part is called a fuse part. The main element includes also at least two parts on said metal bar which are continuous to said fuse part.

Abstract: The present invention relates to semiconductor electronic devices including molybdenum oxide formed on substrates which consist of materials which are used in known semiconductor electronic devices. The present invention relates to also a new method to fabricate said electronic devices on substrates made of materials which have been used in usual electronic and photonic devices. Suitable substrates consist of materials such as element semiconductors such as silicon and germanium, III-V compound semiconductors such as gallium arsenide and gallium phosphide, II-IV compound semiconductors such as zinc oxide, IV compound semiconductors, organic semiconductors, metal crystals and their derivatives or glasses.

Abstract: The present invention directed to photonic devices which emit or absorb light with a short wavelength formed using molybdenum oxide grown on substrates which consist of materials selected from element semiconductors, III-V or II-IV compound semiconductors, IV compound semiconductors, organic semiconductors, metal crystal and their derivatives or glasses. New inexpensive photonic devices which emit light with a wavelength from blue to deep ultraviolet rays are realized.

Abstract: The present invention is directed to a new semiconductor film comprising of metal oxide grown on a substrate and its fabrication method. The metal oxide is comprised of molybdenum oxide which is very useful to fabricate electronic devices with high withstand voltages and photonic and electronic hostile-environment devices. An important aspect of the present invention is that the molybdenum oxide film is formed on a substrate made of material which has been used in usual electronic and photonic devices. The most popular material is silicon. Another important aspect of the present invention is a new method to form a molybdenum oxide film on a substrate.

Abstract: The present invention is to provide an improved surge protector device and its fabricating method. The present invention's surge protector device basically comprises: a plurality of metal bars which are combined to a single body by a continuous high-resistive film of semiconductor crystal so that there is no gap between adjacent metal bars; and electrodes formed on the endmembers of said metal bars composing the single body. Thus, the present invention's surge protector device is fabricated so as to have no air gap between adjacent ones of the metal bars. As a result, the present invention's protector device can operate in such a way that the surge protector device changes from a non-conductive state to a conductive state due to breakdown in depletion region accompanying the semiconductor crystal when the voltage across the electrodes exceeds a threshold voltage because of a surge.

Abstract: The present invention is directed to electronic devices comprising high-purity molybdenum oxide in at least a part of the devices.

Abstract: The present invention is directed to photonic devices which emit or absorb light with a wavelength shorter than that GaN photonic devices can emit or absorb.

Abstract: The present invention is directed to a main element of a surge protector device and its fabrication method which uses breakdown phenomenon of a single high resistive film. A breakdown voltage and a place where breakdown occurs can be precisely controlled. The surge protector device changes from its non-conductive state to conductive state very quickly when a surge is induced and returns quickly to the non-conductive state when a surge is removed if said element is surrounded by oxidizing agent.

Abstract: The present invention relates to devices each of which has an ultra-micro structure formed using a focused ion beam (FIB). In many cases, the structure has a shape of plate standing itself on a substrate. Although typical examples of the devices according to the present invention are a field effect transistor and a laser diode, the present invention is not limited to only such devices. The field effect transistors and the laser diodes according to the present invention have new functions or improved characteristics.

Abstract: The present invention is directed to a main element of a surge protector device and its fabrication method which uses breakdown phenomenon of a single high resistive film. A breakdown voltage and a place where breakdown occurs can be precisely controlled. The surge protector device changes from its non-conductive state to conductive state very quickly when a surge is induced and returns quickly to the non-conductive state when a surge is removed if said element is surrounded by oxidizing agent. The main element of the surge protector device of the present invention has a single high resistive film on a single metal bar. The high resistive film has a part or parts where electric field concentrates when a surge induced. A breakdown voltage can be controlled precisely by controlling a size including a thickness of the high resistive film of the part. The part is called a fuse part. The main element includes also at least two parts on said metal bar which are continuous to said fuse part.