Abstract: A machining strain removal apparatus for removing machining strain present on a treated surface of a workpiece, for example, a ground back of a semiconductor wafer by polishing the treated surface or ground back with a polishing tool with a high efficiency in a high quality. The apparatus includes a chuck for holding the workpiece while exposing the treated surface, and a polishing component for polishing the treated surface of the workpiece held on the chuck. The polishing component includes a polishing tool, and presses the polishing tool being rotated against the treated surface of the workpiece, thereby polishing the treated surface.

Abstract: A machining strain removal apparatus for removing machining strain present on a treated surface of a workpiece, for example, a ground back of a semiconductor wafer by polishing the treated surface or ground back with a polishing tool with a high efficiency in a high quality. The apparatus comprises chuck means for holding the workpiece while exposing the treated surface, and polishing means for polishing the treated surface of the workpiece held on the chuck means. The polishing means includes a polishing tool, and presses the polishing tool being rotated against the treated surface of the workpiece, thereby polishing the treated surface.

Abstract: Disclosed is an improved semiconductor wafer grinding apparatus comprising at least wafer holding means and wafer grinding means. The wafer holding means comprises a holder having a wafer-gripping surface for sucking and holding a selected semiconductor wafer and liquid bearing means for rotatably supporting the holder. The liquid bearing means has inclination control means formed therein, and the inclination control means includes discrete inclination controlling areas for suspending the holder at upper and lower levels. Each inclination controlling area has flow rate control means connected thereto. The parallelism of the wafer-gripping surface relative to the wafer grinding means is assured by controlling the flow rate of the liquid to each inclination controlling area.