Abstract: The present invention provides a silver electrode having smaller change in resistivity due to temperature change as compared with the related arts, and a method of manufacturing the silver electrode. The silver electrode is configured to have one peak in a range of a diffraction angle 2?=37.5° to 38.3° in an X-ray diffraction pattern measured by an X-ray diffractometer using a CuK?1 ray, and a change rate of the diffraction angle of the peak after heated at 150° C. for 30 minutes is less than or equal to 0.5%. In this way, the silver electrode has smaller change in resistivity due to temperature change as compared with the related arts.

Abstract: A transparent electrode-equipped substrate includes, on a film base material having a transparent film substrate, a non-crystalline transparent foundation oxide layer and a non-crystalline transparent conductive oxide layer. The transparent electrode-equipped substrate is capable of achieving low resistivity by having the transparent oxide layers being formed sequentially from the film base material side through sputtering such that the absolute value of a discharge voltage (VU) of a direct-current (DC) power supply when forming the transparent foundation oxide layer is 255-280 V, the ratio (VU/VC) between the discharge voltage (VU) of the DC power supply when forming the transparent foundation oxide layer and the discharge voltage VC of the DC power supply when forming the transparent conductive oxide layer is 0.86-0.98.

Abstract: A photoelectric conversion element for detecting the spot size of incident light. The photoelectric conversion element includes a photoelectric conversion substrate having two principal surfaces, and comprises a first sensitive part and a second sensitive part that have mutually different photoelectric conversion characteristics. When a sensitive region appearing in the principal surface of the first sensitive part is defined as a first sensitive region, and a sensitive region appearing in the principal surface of the second sensitive part is defined as a second sensitive region, the first sensitive region is configured to receive at least a portion of light incident on a light-receiving surface and to decrease, proportionally to enlargement in an irradiation region of the principal surface irradiated with the incident light, the ratio of the first sensitive region to the second sensitive region in the irradiation region.

Abstract: A photovoltaic device according to the present disclosure includes: a first-conductivity-type semiconductor film provided on a back side of a semiconductor substrate; a second-conductivity-type semiconductor film in which at least a part thereof is provided in a position different, in plan view, from a position of the first-conductivity-type semiconductor film on the back side of the semiconductor substrate; a protective film, which is formed on a back side of the first-conductivity-type semiconductor film and a back side of the second-conductivity-type semiconductor film, and which includes a conductive portion and a non-conductive transformed portion; and an electrode film formed on a back side of the conductive portion. The transformed portion of the protective film is provided along a conduction path between a back surface of the first-conductivity-type semiconductor film and a back surface of the second-conductivity-type semiconductor film.

Abstract: A patterning sheet, or the like, is suitable when a complex etching target is to be etched in a simple manner to produce an etched structure. This patterning sheet comprises a base sheet formed from an etching-solution permeable first polymer, and particles dispersed in the base sheet and formed from a second polymer, which absorbs and holds the etching solution.

Abstract: The method for manufacturing a solar cell includes: forming a first semiconductor layer of first conductivity type on a surface of a semiconductor substrate; forming a lift-off layer containing a silicon-based material on the first semiconductor layer; selectively removing the lift-off layer and first semiconductor layer; forming a second semiconductor layer of second conductivity type on a surface having the lift-off layer and first semiconductor layer; and removing the second semiconductor layer covering the lift-off layer by removing the lift-off layer using an etching solution.

Abstract: A photoelectric conversion element for detecting the spot size of incident light. The photoelectric conversion element includes a photoelectric conversion substrate having two principal surfaces, and the substrate includes a first sensitivity part and a second sensitivity part that are separated from each other. When a sensitivity area appearing on the principal surface of the first sensitivity part is defined as a first sensitivity area and a sensitivity area appearing on the principal surface of the second sensitivity part is defined as a second sensitivity area, the first sensitivity area receives at least a portion of incident light incident on a light receiving surface, and a pattern is formed such that an increase in an irradiation area of the principal surface irradiated with the incident light reduces the ratio of the first sensitivity area to the second sensitivity area in the irradiation area.

Abstract: A transparent electrode-equipped substrate includes, on a film base material having a transparent film substrate, a non-crystalline transparent foundation oxide layer and a non-crystalline transparent conductive oxide layer. The transparent electrode-equipped substrate is capable of achieving low resistivity by having the transparent oxide layers being formed sequentially from the film base material side through sputtering such that the absolute value of a discharge voltage (VU) of a direct-current (DC) power supply when forming the transparent foundation oxide layer is 255-280 V, the ratio (VU/VC) between the discharge voltage (VU) of the DC power supply when forming the transparent foundation oxide layer and the discharge voltage VC of the DC power supply when forming the transparent conductive oxide layer is 0.86-0.98.

Abstract: A photovoltaic device according to the present disclosure includes: a first-conductivity-type semiconductor film provided on a back side of a semiconductor substrate; a second-conductivity-type semiconductor film in which at least a part thereof is provided in a position different, in plan view, from a position of the first-conductivity-type semiconductor film on the back side of the semiconductor substrate; a protective film, which is formed on a back side of the first-conductivity-type semiconductor film and a back side of the second-conductivity-type semiconductor film, and which includes a conductive portion and a non-conductive transformed portion; and an electrode film formed on a back side of the conductive portion. The transformed portion of the protective film is provided along a conduction path between a back surface of the first-conductivity-type semiconductor film and a back surface of the second-conductivity-type semiconductor film.

Abstract: A method for manufacturing a solar cell includes: forming a first semiconductor layer of a first conductivity type on and over one of two major surfaces facing each other on a crystal substrate; forming a lift-off layer on and over the first semiconductor layer; selectively removing the lift-off layer and first semiconductor layer; forming a second semiconductor layer of a second conductivity type on and over the major surface having the lift-off layer and the first semiconductor layer; and removing the second semiconductor layer covering the lift-off layer by removing the lift-off layer using an etching solution; and washing the crystal substrate by using a rinsing liquid.

Abstract: The method for manufacturing a solar cell includes: forming a first semiconductor layer of first conductivity type on a surface of a semiconductor substrate; forming a lift-off layer containing a silicon-based material on the first semiconductor layer; selectively removing the lift-off layer and first semiconductor layer; forming a second semiconductor layer of second conductivity type on a surface having the lift-off layer and first semiconductor layer; and removing the second semiconductor layer covering the lift-off layer by removing the lift-off layer using an etching solution.

Abstract: Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization dining a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

Abstract: A photoelectric conversion element for detecting the spot size of incident light. The photoelectric conversion element includes a photoelectric conversion substrate having two principal surfaces, and the substrate includes a first sensitivity part and a second sensitivity part that are separated from each other. When a sensitivity area appearing on the principal surface of the first sensitivity part is defined as a first sensitivity area and a sensitivity area appearing on the principal surface of the second sensitivity part is defined as a second sensitivity area, the first sensitivity area receives at least a portion of incident light incident on a light receiving surface, and a pattern is formed such that an increase in an irradiation area of the principal surface irradiated with the incident light reduces the ratio of the first sensitivity area to the second sensitivity area in the irradiation area.

Abstract: A solar cell, such as a back contact solar cell that can be cut into an arbitrary shape, includes a semiconductor substrate; a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, disposed on the back surface of the semiconductor substrate; first electrode layers corresponding to the first conductivity-type semiconductor layer, and a second electrode layer corresponding to the second conductivity-type semiconductor layer. The second electrode layer and the plurality of first electrode layers form a sea-island structure in which the first electrode layers are in the form of islands, while the second electrode layer is in the form of sea. This solar cell also includes a plate electrode which is arranged to face the back surface of the semiconductor substrate, and which is connected to the plurality of first electrode layers, while being not connected to the second electrode layer.

Abstract: A patterning sheet, or the like, is suitable when a complex etching target is to be etched in a simple manner to produce an etched structure. This patterning sheet comprises a base sheet formed from an etching-solution permeable first polymer, and particles dispersed in the base sheet and formed from a second polymer, which absorbs and holds the etching solution.

Abstract: A photoelectric conversion element for detecting the spot size of incident light. The photoelectric conversion element includes a photoelectric conversion substrate having two principal surfaces, and comprises a first sensitive part and a second sensitive part that have mutually different photoelectric conversion characteristics. When a sensitive region appearing in the principal surface of the first sensitive part is defined as a first sensitive region, and a sensitive region appearing in the principal surface of the second sensitive part is defined as a second sensitive region, the first sensitive region is configured to receive at least a portion of light incident on a light-receiving surface and to decrease, proportionally to enlargement in an irradiation region of the principal surface irradiated with the incident light, the ratio of the first sensitive region to the second sensitive region in the irradiation region.

Abstract: A substrate with a transparent electrode which includes an amorphous transparent electrode layer on a transparent film substrate. When a bias voltage of 0.1 V is applied to the amorphous transparent electrode layer, the layer has continuous regions where a current value at a voltage-applied surface is 50 nA or more. Each of the continuous regions has an area of 100 nm2 or more and the number of the continuous regions is 50/?m2 or more. In one embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. With respect to the substrate with a transparent electrode according to the present invention, the transparent electrode layer may be crystallized in a short period of time.

Abstract: Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization dining a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

Abstract: Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization during a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

Abstract: A transparent electrode-equipped substrate includes a metal oxide transparent electrode layer on a transparent substrate. The average maximum curvature Ssc of the surface of the transparent electrode layer is preferably 5.4×10?4 nm?1 or less. For example, if the transparent electrode layer is subjected to a surface treatment by low discharge-power sputtering after deposition, the Ssc of the transparent electrode layer can be reduced. This transparent electrode-equipped substrate excels in close adhesion between the transparent electrode layer and a lead-out wiring line disposed on the transparent electrode layer. The transparent electrode layer is obtained by, for example, performing a transparent electrode deposition step of through the application of a first discharge power and then performing a surface treatment step through the application of a second discharge power.