Abstract: A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.

Abstract: A semiconductor device is provided with: a semiconductor substrate; a first electrode disposed on a surface of the semiconductor device and configured to be soldered to a conductive member; and a second electrode disposed on the surface of the semiconductor device and configured to be wire-bonded to a conductive member. The first electrode includes first, second and third metal layers. The second metal layer is located between the first and third metal layers. A metallic material of the second metal layer is greater in tensile strength than a metallic material of each one of the first metal layer and the third metal layer. The second electrode includes a layer made of a same metallic material as one of the first metal layer and the third metal layer, and does not include any layers made of a same metallic material as the second metal layer.

Abstract: A semiconductor device is provided with: a semiconductor substrate; a first electrode disposed on a surface of the semiconductor device and configured to be soldered to a conductive member; and a second electrode disposed on the surface of the semiconductor device and configured to be wire-bonded to a conductive member. The first electrode includes first, second and third metal layers. The second metal layer is located between the first and third metal layers. A metallic material of the second metal layer is greater in tensile strength than a metallic material of each one of the first metal layer and the third metal layer. The second electrode includes a layer made of a same metallic material as one of the first metal layer and the third metal layer, and does not include any layers made of a same metallic material as the second metal layer.

Abstract: A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.

Abstract: A switching device includes a semiconductor substrate having a first element range and an ineffective range. First trenches extend in a first direction across the first element range and the ineffective range. Second trenches are provided in each inter-trench region within the first element range and are not provided within the ineffective range. A gate electrode is disposed in the trenches. No contact hole is provided in an interlayer insulating film within the ineffective range. The first metal layer covers the interlayer insulating film. The insulating protective film covers a portion of the first metal layer on its outer peripheral side within the ineffective range. The second metal region is in contact with the first metal layer within an opening of the insulating protective film, and is in contact with a side surface of the opening.

Abstract: A switching device including a semiconductor substrate including a trench (gate electrode) extending in a mesh shape is provided, and the upper surface of the semiconductor substrate is covered by the interlayer insulating film. Within an element range a contact hole is provided in an interlayer insulating film above each cell region while within a surrounding range an entire upper surface of each cell region is covered by the interlayer insulating film. The first metal layer covers the interlayer insulating film, and has recesses above the contact holes. The insulating protective film covers an outer peripheral side portion of the first metal layer within the surrounding range. The second metal layer covers the first metal layer within an opening of the insulating protective film. Within the surrounding range, a second conductivity-type region extending to below lower ends of the trench and is electrically connected to the body region, is provided.

Abstract: A switching device includes a semiconductor substrate having a first element range including first trenches for gates, and an ineffective range not including the first trenches. In an interlayer insulating film, a contact hole is provided within the first element range, and a wide contact hole is provided within the inactive range. The first metal layer contacts the semiconductor substrate within the contact hole and the wide contact hole. The insulating protective film covers an outer peripheral side portion of a bottom surface of a second recess which is provided in a surface of the first metal layer above the wide contact hole. A side surface of an opening provided in a portion of the insulating protective film that includes the first element range is disposed in the second recess. The second metal layer contacts the first metal layer and the side surface of the opening.

Abstract: A switching device includes a semiconductor substrate having a first element range and an ineffective range. First trenches extend in a first direction across the first element range and the ineffective range. Second trenches are provided in each inter-trench region within the first element range and are not provided within the ineffective range. A gate electrode is disposed in the trenches. No contact hole is provided in an interlayer insulating film within the ineffective range. The first metal layer covers the interlayer insulating film. The insulating protective film covers a portion of the first metal layer on its outer peripheral side within the ineffective range. The second metal region is in contact with the first metal layer within an opening of the insulating protective film, and is in contact with a side surface of the opening.

Abstract: A switching device including a semiconductor substrate including a trench (gate electrode) extending in a mesh shape is provided, and the upper surface of the semiconductor substrate is covered by the interlayer insulating film. Within an element range a contact hole is provided in an interlayer insulating film above each cell region while within a surrounding range an entire upper surface of each cell region is covered by the interlayer insulating film. The first metal layer covers the interlayer insulating film, and has recesses above the contact holes. The insulating protective film covers an outer peripheral side portion of the first metal layer within the surrounding range. The second metal layer covers the first metal layer within an opening of the insulating protective film. Within the surrounding range, a second conductivity-type region extending to below lower ends of the trench and is electrically connected to the body region, is provided.

Abstract: A switching device includes a semiconductor substrate having a first element range including first trenches for gates, and an ineffective range not including the first trenches. In an interlayer insulating film, a contact hole is provided within the first element range, and a wide contact hole is provided within the inactive range. The first metal layer contacts the semiconductor substrate within the contact hole and the wide contact hole. The insulating protective film covers an outer peripheral side portion of a bottom surface of a second recess which is provided in a surface of the first metal layer above the wide contact hole. A side surface of an opening provided in a portion of the insulating protective film that includes the first element range is disposed in the second recess. The second metal layer contacts the first metal layer and the side surface of the opening.

Abstract: In a plan view of a semiconductor substrate, the semiconductor substrate includes a pillar exposing area in which the pillar region is exposed on the front surface of the semiconductor substrate, a pillar contacting area in which the pillar region is in contact with a deeper side of the anode contact region, and an anode contacting area in which the anode region is in contact with the deeper side of the anode contact region. In a direction along which the pillar contacting area and the anode contacting area are aligned, a width of the pillar contacting area is smaller than a width of the anode contacting area.

Abstract: In a plan view of a semiconductor substrate, the semiconductor substrate includes a pillar exposing area in which the pillar region is exposed on the front surface of the semiconductor substrate, a pillar contacting area in which the pillar region is in contact with a deeper side of the anode contact region, and an anode contacting area in which the anode region is in contact with the deeper side of the anode contact region. In a direction along which the pillar contacting area and the anode contacting area are aligned, a width of the pillar contacting area is smaller than a width of the anode contacting area.

Abstract: A tone control circuit includes a capacitor-resistor circuit; a resistor-capacitor circuit which is connected to the capacitor-resistor circuit; and a variable resistor which is connected between the resistor-capacitor circuit and capacitor-resistor circuit or a connecting point of both circuits. The variable resistor controls tone easily at high and low frequencies without change of the loudness when voice is output.

Abstract: A navigation apparatus and arrival detection method detect a current location of a vehicle and searches for a route to a set destination. The apparatus and method provide guidance to the destination along the searched route and determine whether the destination is set within a car-free area. If it is determined that the destination is set within the car-free area, the apparatus and method expand an arrival detection area for the destination, and terminate the guidance to the destination when it is determined that the vehicle is within the expanded arrival detection area. Alternatively, even if the destination is not within a car-free area, after an engine of a vehicle is shut off and restarts, the navigation apparatus and method expand an arrival detection area for the destination, and terminate the guidance to the destination when the vehicle is within the expanded arrival detection area.

Abstract: The tone control circuit includes a capacitor-resistor circuit; a resistor-capacitor circuit which is connected to the capacitor-resistor circuit; and a variable resistor which is connected between the resistor-capacitor circuit and capacitor-resistor circuit or a connecting point of both circuits. Therefore, it can control the tone easily at high and low frequencies without change of the loudness (sensuous volume) when the voice is output.

Abstract: Coatings containing fluoropolymers and fluorinated telomers have been developed. The coatings are suitable for coating plastic substrates and are suitable for use in applications wherein relatively low reflectivity is desired.

Abstract: A navigation apparatus and arrival detection method detect a current location of a vehicle and searches for a route to a set destination. The apparatus and method provide guidance to the destination along the searched route and determine whether the destination is set within a car-free area. If it is determined that the destination is set within the car-free area, the apparatus and method expand an arrival detection area for the destination, and terminate the guidance to the destination when it is determined that the vehicle is within the expanded arrival detection area. Alternatively, even if the destination is not within a car-free area, after an engine of a vehicle is shut off and restarts, the navigation apparatus and method expand an arrival detection area for the destination, and terminate the guidance to the destination when the vehicle is within the expanded arrival detection area.

Abstract: An ear plug to be inserted into the external auditory canal, having a compressible sleeve member and a core member attached therein, the improvement in which plural projections or a single projection are formed intermittently or continuously on an exterior of the core member, and vent is formed through or along the projection to make the external auditory canal communicate with the external atmosphere when inserted into the external auditory canal. A communicating passage or vent to an effective degree for remarkably decreasing the pressure difference between the inside of the external auditory canal and the external atmosphere as well as preventing leakage of sound causing so-called howling.

Abstract: An ear plug to be inserted into the external auditory canal, having a compressible sleeve member and a core member attached therein, the improvement in which plural projections or a single projection are formed intermittently or continuously on an exterior of the core member, and vent is formed through or along the projection to make the external auditory canal communicate with the external atmosphere when inserted into the external auditory canal. A communicating passage or vent to an effective degree for remarkably decreasing the pressure difference between the inside of the external auditory canal and the external atmosphere as well as preventing leakage of sound causing so-called howling.