Abstract: A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.

Abstract: A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.

Abstract: A semiconductor integrated circuit device enhanced in design efficiency while achieving multi-functionalization and power saving is to be provided. The semiconductor integrated circuit device has first through third circuit blocks, and is placed in a first power supply state in which the operation of internal circuits in the first circuit block is guaranteed in accordance with an instruction from the third circuit block or a second power supply state in which the operation of the internal circuits is not guaranteed.

Abstract: A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.

Abstract: A semiconductor integrated circuit device enhanced in design efficiency while achieving multi-functionalization and power saving is to be provided. The semiconductor integrated circuit device has first through third circuit blocks, and is placed in a first power supply state in which the operation of internal circuits in the first circuit block is guaranteed in accordance with an instruction from the third circuit block or a second power supply state in which the operation of the internal circuits is not guaranteed.

Abstract: A plurality of MOS transistors each having an SOI structure includes, in mixed form, those brought into body floating and whose body voltages are fixed and variably set. When a high-speed operation is expected in a logic circuit in which operating power is relatively a low voltage and a switching operation is principally performed, body floating may be adopted. Body voltage fixing may be adopted in an analog system circuit that essentially dislikes a kink phenomenon of a current-voltage characteristic. Body bias variable control may be adopted in a logic circuit that requires the speedup of operation in an active state and needs low power consumption in a standby state. Providing in mixed form the transistors which are subjected to the body floating and the body voltage fixing and which are variably controlled in body voltage, makes it easier to adopt an accurate body bias according to a circuit function and a circuit configuration in terms of the speedup of operation and the low power consumption.

Abstract: The semiconductor integrated circuit has so-called SOI type first MOS transistors (MNtk, MPtk) and second MOS transistors (MNtn, MPtn). The first MOS transistors have a gate isolation film thicker than that the second MOS transistors have. The first and second MOS transistors constitute a power-supply-interruptible circuit (6) and a power-supply-uninterrupted circuit (7). The power-supply-interruptible circuit has the first MOS transistors each constituting a power switch (10) between a source line (VDD) and a ground line (VSS), and the second MOS transistors connected in series with the power switch. A gate control signal for the first MOS transistors each constituting a power switch is made larger in amplitude than that for the second MOS transistors. This enables power-source cutoff control with a high degree of flexibility commensurate with the device isolation structure, which an SOI type semiconductor integrated circuit has originally.

Abstract: A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.

Abstract: The semiconductor integrated circuit has so-called SOI type first MOS transistors (MNtk, MPtk) and second MOS transistors (MNtn, MPtn). The first MOS transistors have a gate isolation film thicker than that the second MOS transistors have. The first and second MOS transistors constitute a power-supply-interruptible circuit (6) and a power-supply-uninterrupted circuit (7). The power-supply-interruptible circuit has the first MOS transistors each constituting a power switch (10) between a source line (VDD) and a ground line (VSS), and the second MOS transistors connected in series with the power switch. A gate control signal for the first MOS transistors each constituting a power switch is made larger in amplitude than that for the second MOS transistors. This enables power-source cutoff control with a high degree of flexibility commensurate with the device isolation structure, which an SOI type semiconductor integrated circuit has originally.

Abstract: A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.

Abstract: A body bias control system allows for independent design of a functional module, thereby reducing the burden of designing the module. The body bias control system provides a switch circuit having an area in which the body bias is controlled independently of its outside portion, for controlling the supply of body bias in the vicinity of the area. Preferably three types of switches are provided for switching the body bias to suitable levels for a standby mode, a mode of normal operation and a mode of high-speed operation.

Abstract: A semiconductor integrated circuit device enhanced in design efficiency while achieving multi-functionalization and power saving is to be provided. The semiconductor integrated circuit device has first through third circuit blocks, and is placed in a first power supply state in which the operation of internal circuits in the first circuit block is guaranteed in accordance with an instruction from the third circuit block or a second power supply state in which the operation of the internal circuits is not guaranteed.

Abstract: A fingerprinting technique of taking a left fingerprint, storing the taken fingerprint, and physically recording/storing information collected when the fingerprint is taken so as to add a physical evidence adoption capability. Fingerprinting means comprises a fingerprinting section (11) adapted for taking a fingerprint and composed of an adhesive layer or a layer (111) made of a substance to which ridges of a fingerprint can be transferred and a data recording section (12) provided in association with the fingerprinting section (11) and adapted for recording various information on the person having the fingerprint. The fingerprinting section (11) and the data recording section (12) are provided on the same base (1) and the covered with a protective film (13).

Abstract: A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.

Abstract: The invention provides a semiconductor integrated circuit device with improved designing efficiency while achieving higher functions. An inner circuit is surrounded by a plurality of cells in which a first switch element for connecting a power supply voltage line or a ground voltage supply line to a power supply line of an internal circuit is disposed below power supply lines extending in a first and second directions, and the power lines are connected together.

Abstract: The semiconductor integrated circuit has so-called SOI type first MOS transistors (MNtk, MPtk) and second MOS transistors (MNtn, MPtn). The first MOS transistors have a gate isolation film thicker than that the second MOS transistors have. The first and second MOS transistors constitute a power-supply-interruptible circuit (6) and a power-supply-uninterrupted circuit (7). The power-supply-interruptible circuit has the first MOS transistors each constituting a power switch (10) between a source line (VDD) and a ground line (VSS), and the second MOS transistors connected in series with the power switch. A gate control signal for the first MOS transistors each constituting a power switch is made larger in amplitude than that for the second MOS transistors. This enables power-source cutoff control with a high degree of flexibility commensurate with the device isolation structure, which an SOI type semiconductor integrated circuit has originally.

Abstract: A plurality of MOS transistors each having an SOI structure includes, in mixed form, those brought into body floating and whose body voltages are fixed and variably set. When a high-speed operation is expected in a logic circuit in which operating power is relatively a low voltage and a switching operation is principally performed, body floating may be adopted. Body voltage fixing may be adopted in an analog system circuit that essentially dislikes a kink phenomenon of a current-voltage characteristic. Body bias variable control may be adopted in a logic circuit that requires the speedup of operation in an active state and needs low power consumption in a standby state. Providing in mixed form the transistors which are subjected to the body floating and the body voltage fixing and which are variably controlled in body voltage, makes it easier to adopt an accurate body bias according to a circuit function and a circuit configuration in terms of the speedup of operation and the low power consumption.

Abstract: A semiconductor integrated circuit device enhanced in design efficiency while achieving multi-functionalization and power saving is to be provided.

Abstract: The invention provides a semiconductor integrated circuit device with improved designing efficiency while achieving higher functions.

Abstract: A body bias control system allows for independent design of a functional module, thereby reducing the burden of designing the module. The body bias control system provides a switch circuit having an area in which the body bias is controlled independently of its outside portion, for controlling the supply of body bias in the vicinity of the area. Preferably three types of switches are provided for switching the body bias to suitable levels for a standby mode, a mode of normal operation and a mode of high-speed operation.