Abstract: A semiconductor module includes a ground substrate that is provided with a drive circuit, and a plurality of light emitting elements that are electrically coupled to the drive circuit, in which a distance between the light emitting elements adjacent to each other is equal to or less than 20 ?m in a top view.

Abstract: A semiconductor module includes a base substrate; a plurality of light emitting elements; a plurality of color conversion layers being in contact with each upper portion of the plurality of light emitting elements adjacent to each other; and a light shielding layer disposed between the plurality of light emitting elements adjacent each other and between the color conversion layers adjacent to each other, and separating the plurality of light emitting elements and a plurality of color conversion layers.

Abstract: In a micro light emitting element, a first metal film electrically connected to a second conductive layer is disposed on a surface on an opposite side of a light emitting surface side. The first metal film covers the second conductive layer. A first inclined angle of a first conductive layer side surface from a slope formed around a light emission layer to the light emitting surface is larger than a second inclined angle of the slope. The slope and the first conductive layer side surface are covered together by a second metal film. A first transparent insulating film is disposed between the slope and the second metal film.

Abstract: A semiconductor module includes a ground substrate that is provided with a drive circuit, and a plurality of light emitting elements that are electrically coupled to the drive circuit, in which a distance between the light emitting elements adjacent to each other is equal to or less than 20 ?m in a top view.

Abstract: A semiconductor module includes a base substrate; a plurality of light emitting elements; a plurality of color conversion layers being in contact with each upper portion of the plurality of light emitting elements adjacent to each other; and a light shielding layer disposed between the plurality of light emitting elements adjacent each other and between the color conversion layers adjacent to each other, and separating the plurality of light emitting elements and a plurality of color conversion layers.

Abstract: In a micro light emitting element, a first metal film electrically connected to a second conductive layer is disposed on a surface on an opposite side of a light emitting surface side. The first metal film covers the second conductive layer. A first inclined angle of a first conductive layer side surface from a slope formed around a light emission layer to the light emitting surface is larger than a second inclined angle of the slope. The slope and the first conductive layer side surface are covered together by a second metal film. A first transparent insulating film is disposed between the slope and the second metal film.

Abstract: A nitride semiconductor light emitting element 1 includes a second conductivity type nitride semiconductor layer which is formed above a first conductivity type nitride semiconductor layer, a first electrode 17a which is formed on a first region of the second conductivity type nitride semiconductor layer with a first current non-injection layer 13a in between, a first current diffusing layer 14a which is formed between the first current non-injection layer 13a and the first electrode 17a, a second electrode 17b which is formed on a second region of the second conductivity type nitride semiconductor layer with a second current non-injection layer 13b in between, a second current diffusing layer 14b which is formed on the second region and on the second current non-injection layer 13b, and an extending portion 17c which extends from the first electrode 17a and reaches the exposed first conductivity type nitride semiconductor layer.

Abstract: A nitride semiconductor light emitting element 1 includes a second conductivity type nitride semiconductor layer which is formed above thea first conductivity type nitride semiconductor layer, a first electrode 17a which is formed on a first region of the second conductivity type nitride semiconductor layer with a first current non-injection layer 13a in between, a first current diffusing layer 14a which is formed between the first current non-injection layer 13a and the first electrode 17a, a second electrode 17b which is formed on a second region of the second conductivity type nitride semiconductor layer with a second current non-injection layer 13b in between, a second current diffusing layer 14b which is formed on the second region and on the second current non-injection layer 13b, and an extending portion 17c which extends from the first electrode 17a and reaches the exposed first conductivity type nitride semiconductor layer.