Abstract: The analysis apparatus according to the present invention is capable of setting parameters and user authentication, which do not require key input. When a specific analysis apparatus is set so as to measure a specific type of data, a plurality of required parameters are converted to data having a format suitable for a relay medium and the converted data is recorded in the relay medium. An importing unit imports the plurality of parameters from the relay medium. A restoration unit is used to obtain, from the imported parameters, each parameter in the pre-conversion format thereof. The individual obtained parameters are transferred to a setting unit and set to a required setting destination. This being the case, the replay medium is created according to the support from a management device of a manufacturer and a repeater.

Abstract: An event monitoring system includes a processor and a storage unit. The storage unit holds an event message including a character string related to an event occurring in an information system and guide information including one or more guides. The guide includes a guide message including a predetermined character string, notified in response to the event, and information regarding a coping method for the event. The processor compares the event message and the guide, associates the guide with the event in a case where the guide further includes information for identifying a variable portion of the guide message and a portion other than the variable portion of the guide message coincides with a portion other than a portion corresponding to the variable portion in the event message, and receives an input of information indicating a correct answer of a guide to be associated with the event in a case where the guide does not include the information for identifying the variable portion.

Abstract: A vehicle tailgate structure including a first panel portion including a composite material and a second panel portion overmolded onto the first panel portion, the first and second panel portions forming together a body portion, a transverse beam and side beams connecting the transverse beam to the body portion, wherein the transverse beam includes a hinge attachment portion configured to receive a hinge attachment part, wherein the first panel portion has a bent strip in the transverse beam, and wherein the bent strip is raised with respect to a remaining portion of the first panel portion.

Abstract: A porous material comprising vapor grown carbon fiber in an amount of 10 to 90 mass %, fiber filaments of the carbon fiber forming a three-dimensional network and having a diameter of 1 to 1,000 nm, an aspect ratio of 5 to 15,000, a specific surface area (by BET method) of 2 to 2,000 m2/g, and the ratio of the intensity of the peak at 1,360 cm?1 in a Raman scattering spectrum of the carbon fiber to that of the peak at 1,580 cm?1 in the spectrum(I1360/I1580) is 0.1 to 2.0, wherein the porosity of the porous material (V/V0) is 0.50 to 0.99 and a specific surface area is 5 to 1,000 m2/g; and a production method and use thereof. The vapor grow carbon fiber impregnated in the porous material of the present invention does not contain aggregates and a three-dimensional network is formed between the fiber filaments, wherein length of each of the fiber filaments is maintained.

Abstract: A porous material comprising vapor grown carbon fiber in an amount of 10 to 90 mass %, fiber filaments of the carbon fiber forming a three-dimensional network and having a diameter of 1 to 1,000 nm, an aspect ratio of 5 to 15,000, a specific surface area (by BET method) of 2 to 2,000 m2/g, and the ratio of the intensity of the peak at 1,360 cm?1 in a Raman scattering spectrum of the carbon fiber to that of the peak at 1,580 cm?1 in the spectrum(I1360/I1580) is 0.1 to 2.0, wherein the porosity of the porous material (V/V0) is 0.50 to 0.99 and a specific surface area is 5 to 1,000 m2/g; and a production method and use thereof. The vapor grow carbon fiber impregnated in the porous material of the present invention does not contain aggregates and a three-dimensional network is formed between the fiber filaments, wherein length of each of the fiber filaments is maintained.

Abstract: A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in the SiOx film is diffused into the Group III-V compound semiconductor, thereby forming a doped layer.

Abstract: A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.