Abstract: According to embodiments, there is provided a manufacturing method of a semiconductor device includes forming a semiconductor thin film on a substrate; processing the thin film to a predetermined shape; executing an ion implantation process on the thin film processed to the predetermined shape; executing an anneal treatment on the thin film on which the ion implantation process has been executed to create a resistor element; and adjusting both or any one of a process condition of the ion implantation process and a treatment condition of the anneal treatment based on at least any one of a film forming condition and a film formation result of the forming and a film process result of the processing.

Abstract: According to embodiments, there is provided a manufacturing method of a semiconductor device includes forming a semiconductor thin film on a substrate; processing the thin film to a predetermined shape; executing an ion implantation process on the thin film processed to the predetermined shape; executing an anneal treatment on the thin film on which the ion implantation process has been executed to create a resistor element; and adjusting both or any one of a process condition of the ion implantation process and a treatment condition of the anneal treatment based on at least any one of a film forming condition and a film formation result of the forming and a film process result of the processing.

Abstract: A method of manufacturing a semiconductor device includes the step of doping an N-type impurity via a selective region formed on a semiconductor substrate by lithography, the step of doping a P-type impurity in the semiconductor substrate subsequent to the doping step without forming a selective region by lithography, and the step of self-aligningly forming an N-diffusion layer and a P-diffusion layer by performing wet oxidation with respect to the semiconductor substrate in which the N-type impurity and the P-type impurity are doped.