Abstract: Compounds represented by formula (I), compounds of the less-polar group of two groups of diastereomers in which the carbon atom indicated by * in formula (II) is an asymmetric carbon atom, salts of the compounds, and solvates of the compounds or salts. The compounds have Nrf2 activating action.

Abstract: This invention is intended to identify a gene cluster involved in biosynthesis of a cyclic peptide compound produced by a filamentous fungus of the Curvularia species and to establish a system for synthesizing such cyclic peptide compound. The gene is composed of a first module to a tenth module and encodes a protein having activity of synthesizing a nonribosomal peptide constituting a basic peptide backbone of a cyclic peptide compound produced by a filamentous fungus of the Curvularia species.

Abstract: An information processing apparatus includes: a factual attribute determining unit that determines a factual attribute that can be confirmed to be a fact with respect to a user based on user-provided data having been provided by the user oneself or history data of the user; an inferred attribute determining unit which determines an inferred attribute having been inferred with respect to the user based on user-related data including at least the factual attribute related to the user; and a credit score inferring unit that infers a credit score to be set to the user based on an attribute data group including the factual attribute and the inferred attribute related to the user.

Abstract: An imaging device that makes it possible to smoothly transfer electric charges from a photoelectric converter to a transfer destination is provided. This imaging device includes: a semiconductor layer having a front surface and a back surface, the back surface being on an opposite side of the front surface; photoelectric converter that is embedded in the semiconductor layer and generates electric charges corresponding to a received light amount; and a transfer section that includes a first trench gate and a second trench gate and transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface to the back surface of the semiconductor layer into the photoelectric converter.

Abstract: An object of the present invention is to identify an enzyme having activity of synthesizing dihydrotentoxin that is a tentoxin precursor and an enzyme having activity of synthesizing tentoxin using dihydrotentoxin as a substrate. The present invention concerns a tentoxin synthesis-related gene encoding a protein comprising the amino acid sequence of SEQ ID NO: 16 and having activity of nonribosomal peptide synthesis of dihydrotentoxin and a tentoxin synthesis-related gene encoding a protein comprising the amino acid sequence of SEQ ID NO: 18 and having activity of converting dihydrotentoxin to tentoxin.

Abstract: An imaging device that smoothly transfers electric charges from a photoelectric converter to a transfer destination is provided. This imaging device includes: a semiconductor layer; a photoelectric converter that generates electric charges corresponding to a received light amount; and a transfer section that includes a first trench gate and a second trench gate and transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface to the back surface of the semiconductor layer into the photoelectric converter. The first trench gate has a first length from the front surface to the photoelectric converter, and the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length.

Abstract: An imaging element according to an aspect of the present disclosure includes: a floating diffusion layer (FD) that holds a charge; photoelectric conversion elements (PD) being four or more and sharing the floating diffusion layer (FD); and a plurality of transfer gates (TG) that is provided for each of the photoelectric conversion elements (PD) being four or more and sharing the floating diffusion layer (FD) and that is configured to output the charge from the photoelectric conversion elements (PD) being four or more and sharing the floating diffusion layer (FD), in which the photoelectric conversion elements (PD) being four or more and sharing the floating diffusion layer (FD) are arranged in a matrix together with the floating diffusion layer (FD), and the transfer gate (TG) of each of the photoelectric conversion elements (PD) being two or more and not sharing the floating diffusion layer (FD) is integrated with each other.

Abstract: An imaging unit having a superior phase-difference detection characteristic is provided. The imaging unit includes two or more image-plane phase-difference detection pixels each including a semiconductor layer, a photoelectric converter, a charge holding section, a first light-blocking film, and a second light-blocking film. The semiconductor layer includes a front surface and a back surface on an opposite side to the front surface. The photoelectric converter is provided in the semiconductor layer, and is configured to generate electric charge corresponding to a light reception amount by photoelectric conversion. The charge holding section is provided between the front surface and the photoelectric converter in the semiconductor layer, and is configured to hold the electric charge. The first light-blocking film is positioned between the photoelectric converter and the charge holding section, and has an opening through which the electric charge is allowed to pass.

Abstract: Provided is an imaging apparatus that includes a pixel array portion, a plurality of unit pixels being arranged in the pixel array portion and a driving unit controls an operation of the unit pixel, in which the unit pixel includes a photoelectric converter, a charge retention unit configured to retain a charge, a charge-voltage converter converts the charge into a voltage, a first transmitting unit transmits the charge from the photoelectric converter to the charge retention unit, a second transmitting unit transmits the charge from the photoelectric converter to the charge-voltage converter, and a third transmitting unit transmits the charge from the charge retention unit to the charge-voltage converter.

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.

Abstract: Provided is an imaging device capable of suppressing deterioration in characteristics. The imaging device includes a first substrate portion and a second substrate portion on one surface side of the first substrate portion. The first substrate portion includes a sensor pixel, a first interlayer insulating film, and a first electrode portion. The second substrate portion includes a readout circuit, a second interlayer insulating film, and a second electrode portion. The first electrode portion and the second electrode portion are directly joined to each other. The second semiconductor substrate includes a first element region in which an amplification transistor is provided, a second element region in which another element is provided, and a through region through which the second semiconductor substrate passes in the thickness direction. The first element region and the second element region are isolated by the through region.

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.

Abstract: A gripping device includes: a gripping portion configured to be displaced between a closed position in which a workpiece is grasped and an open position in which the workpiece is released; a holding portion configured to hold the gripping portion; a shaft portion that extends from the holding portion; a support portion configured to support the shaft portion such that the gripping portion faces the workpiece; a driving unit configured to displace the gripping portion between the closed position and the open position; and a moving mechanism configured to move the support portion in an axial direction of the shaft portion, in which the support portion is configured to support the shaft portion such that when a load acts on the shaft portion in the axial direction, the shaft portion is slidable relative to the support portion.

Abstract: A solid-state imaging device includes a light-receiving surface, a plurality of pixels each including a photoelectric conversion section that photoelectrically converts light incident through the light-receiving surface, and a separation section that electrically and optically separates each photoelectric conversion section. Each of the pixels includes a charge-holding section that holds charges transferred from the photoelectric conversion section, a transfer transistor that includes a vertical gate electrode reaching the photoelectric conversion section, and transfers charges from the photoelectric conversion section to the charge-holding section, and a light-blocking section disposed in a layer between the photoelectric conversion section and the charge-holding section. A plurality of the vertical gate electrodes are electrically coupled together in a plurality of first pixels adjacent to each other among the plurality of pixels.

Abstract: To provide an imaging device that makes it possible to further increase imaging performance. This imaging device includes, in an effective pixel region extending along a first surface, a condensing optical system that condenses incident light, a photoelectric conversion unit configured to generate electric charge through photoelectric conversion; an electric charge holding unit configured to hold the electric charge transferred from the photoelectric conversion unit; and a first light shielding film that is provided between the photoelectric conversion unit and the electric charge holding unit in a thickness direction orthogonal to the first surface. The electric charge corresponds to an amount of the incident light passing through the condensing optical system. The first light shielding film blocks the incident light. Here, the condensing optical system condenses the incident light at a position in the effective pixel region.

Abstract: To provide an imaging device that allows miniaturization to be achieved in an in-plane direction without impairing operation performance. This imaging device includes a first pixel and a second pixel. The first pixel includes m (m represents an integer greater than or equal to 2) first wiring lines and m first gate electrodes that are coupled to the m respective first wiring lines. The second pixel includes n (n represents a natural number smaller than m) second wiring lines and n second gate electrodes that are coupled to the n respective second wiring lines.

Abstract: [Object] There are provided a solid-state imaging device that can minimize a decrease in layout efficiency due to trenches and a method of producing the same.

Abstract: An imaging device that makes it possible to smoothly transfer electric charges from a photoelectric converter to a transfer destination is provided. This imaging device includes: a semiconductor layer having a front surface and a back surface, the back surface being on an opposite side of the front surface; photoelectric converter that is embedded in the semiconductor layer and generates electric charges corresponding to a received light amount; and a transfer section that includes a first trench gate and a second trench gate and transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface to the back surface of the semiconductor layer into the photoelectric converter.

Abstract: There is provided an imaging device including a first semiconductor substrate of a first conductivity type that includes a first surface and a second surface on an opposite side from the first surface, a photoelectric conversion unit of a second conductivity type, embedded into the first surface of the first semiconductor substrate, that generates a charge corresponding to an amount of received light by photoelectric conversion, a first charge storage unit and a second charge storage unit of the second conductivity type, embedded in parallel into the second surface of the first semiconductor substrate, that store the charge generated in the photoelectric conversion unit, a first charge transfer unit that transfers the charge from the photoelectric conversion unit to the first charge storage unit, and a second charge transfer unit that transfers the charge from the photoelectric conversion unit to the second charge storage unit.

Abstract: An imaging device that smoothly transfers electric charges from a photoelectric converter to a transfer destination is provided. This imaging device includes: a semiconductor layer; a photoelectric converter that generates electric charges corresponding to a received light amount; and a transfer section that includes a first trench gate and a second trench gate and transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface to the back surface of the semiconductor layer into the photoelectric converter. The first trench gate has a first length from the front surface to the photoelectric converter, and the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length.