Abstract: For a vehicle interior compartment defined by a vehicle floor, opposing sidewalls, a forward end and a rearward end, and a vehicle ceiling covering at least part of the compartment, an end zone overhead display structure includes bulkhead forming attachment elements coupled to a roof strut spanning from sidewall to sidewall of the vehicle roof. The display structure includes an open box-like upper bracket and an open box-like lower bracket coupled together with the roof strut interposed to provide an assembly that reduces unwanted motion, rotation or vibration of the display assembly.

Abstract: A method for manufacturing a surface acoustic wave apparatus to be mounted via bumps by a flip chip bonding system prevents peeling of electrode pads from the piezoelectric substrate and cracks in the piezoelectric substrate from occurring during the formation of the bumps or at other times during the manufacturing process. In the method of manufacturing a surface acoustic wave apparatus, a first electrode layer of the electrode pad is formed on a piezoelectric substrate by etching, an electrode for a surface acoustic wave element is formed by a lift-off method after the first electrode layer is formed, and thereafter, an electrode film including a second electrode layer of the electrode pad and a wiring electrode is formed.

Abstract: A method for manufacturing a surface acoustic wave apparatus to be mounted via bumps by a flip chip bonding system prevents peeling of electrode pads from the piezoelectric substrate and cracks in the piezoelectric substrate from occurring during the formation of the bumps or at other times during the manufacturing process. In the method of manufacturing a surface acoustic wave apparatus, a first electrode layer of the electrode pad is formed on a piezoelectric substrate by etching, an electrode for a surface acoustic wave element is formed by a lift-off method after the first electrode layer is formed, and thereafter, an electrode film including a second electrode layer of the electrode pad and a wiring electrode is formed.

Abstract: A method for manufacturing a surface acoustic wave apparatus to be mounted via bumps by a flip chip bonding system prevents peeling of electrode pads from the piezoelectric substrate and cracks in the piezoelectric substrate from occurring during the formation of the bumps or at other times during the manufacturing process. In the method of manufacturing a surface acoustic wave apparatus, a first electrode layer of the electrode pad is formed on a piezoelectric substrate by etching, an electrode for a surface acoustic wave element is formed by a lift-off method after the first electrode layer is formed, and thereafter, an electrode film including a second electrode layer of the electrode pad and a wiring electrode is formed.

Abstract: A semiconductor device includes: a semiconductor substrate; an active layer; and a plasma-processed layer provided between the semiconductor substrate and the active layer. The plasma-processed layer has a deep level. First and second electrodes are electrically connected by ohmic contact with first and second portions of the active layer, respectively. The first and second portions are spaced apart at a predetermined interval from each other. A third electrode is formed on a third respective portion of the active layer and is located between the first and second portions of the active layer.

Abstract: A method for manufacturing a surface acoustic wave apparatus to be mounted via bumps by a flip chip bonding system prevents peeling of electrode pads from the piezoelectric substrate and cracks in the piezoelectric substrate from occurring during the formation of the bumps or at other times during the manufacturing process. In the method of manufacturing a surface acoustic wave apparatus, a first electrode layer of the electrode pad is formed on a piezoelectric substrate by etching, an electrode for a surface acoustic wave element is formed by a lift-off method after the first electrode layer is formed, and thereafter, an electrode film including a second electrode layer of the electrode pad and a wiring electrode is formed.

Abstract: There is provided a semiconductor element having a Schottky electrode which forms a Schottky junction with an active layer formed on a compound semiconductor substrate characterized in that a modified layer is formed in at least a portion of a region of the active layer on which region the Schottky electrode is formed and a vicinity of that region.

Abstract: There is provided a semiconductor element having a Schottky electrode which forms a Schottky junction with an active layer formed on a compound semiconductor substrate characterized in that a modified layer is formed in at least a portion of a region of the active layer on which region the Schottky electrode is formed and a vicinity of that region.