Abstract: An image processing apparatus according to the present invention has: an apparatus main body whose external appearance is configured from an upper casing, a lower casing, and a link casing that vertically links the upper casing and the lower casing and that has a paper discharge opening for discharging paper on one side face; a paper discharge portion that is formed as a space between the upper casing and the lower casing and that is to store paper discharged from the paper discharge opening; and an operation panel portion that is disposed in a vertically tiltable manner on a front face of the upper casing. When viewing the apparatus main body from the front side, an open space that allows paper discharged to the paper discharge portion to be viewed is provided between the operation panel portion and the link casing.

Abstract: A mounting pedestal is disposed on a wheeled vehicle and a light emitter is mounted on the mounting pedestal. The mounting pedestal includes a metal layer and an insulating layer stacked on the metal layer. The insulating layer has a major surface facing in a direction of travel of the wheeled vehicle and a heat escape port in which solder that joins the light emitter and the metal layer is disposed. The mounting pedestal has a step which arranges the major surface into a plurality of major surfaces.

Abstract: There is provided a constant current circuit having a current characteristic satisfactory in a high voltage circuit while being low in manufacturing cost. The constant current circuit includes a high breakdown-voltage depletion type NMOS transistor and a low breakdown-voltage depletion type NMOS transistor connected in series between a first terminal and a second terminal. The low breakdown-voltage depletion type NMOS transistor includes a first depletion type NMOS transistor and a second depletion type NMOS transistor connected in series. The high breakdown-voltage depletion type NMOS transistor has a gate connected to a connecting point of the first depletion type NMOS transistor and the second depletion type NMOS transistor.

Abstract: A vehicle headlamp includes a plurality of light emitting elements; a plurality of first lenses; and a plurality of second lenses. The first lens includes a first lens entrance and a first lens exit, and is configured to converge light entered the first lens entrance from the light emitting element on the first lens exit. The second lens includes a second lens entrance facing the first lens exit of the first lens and the second lens exit having a projection shape for forming a focal point. The focal point of the second lens is positioned at a side of the second lens ahead the first lens exit of the first lens.

Abstract: An image processing apparatus according to the present invention has: an apparatus main body whose external appearance is configured from an upper casing, a lower casing, and a link casing that vertically links the upper casing and the lower casing and that has a paper discharge opening for discharging paper on one side face; a paper discharge portion that is formed as a space between the upper casing and the lower casing and that is to store paper discharged from the paper discharge opening; and an operation panel portion that is disposed in a vertically tiltable manner on a front face of the upper casing. When viewing the apparatus main body from the front side, an open space that allows paper discharged to the paper discharge portion to be viewed is provided between the operation panel portion and the link casing.

Abstract: A photoelectric conversion apparatus includes a photoelectric conversion unit having a light incident surface and including: a first electrode; a second electrode disposed further toward the light incident surface; and a photoelectric conversion layer disposed between the first and second electrodes. The photoelectric conversion apparatus includes a member in contact with the photoelectric conversion layer and constituting a light guide together with the layer. An area of a first surface parallel to the light incident surface at a portion of the photoelectric conversion layer surrounded by the member is smaller than an area of a second surface disposed between the first surface and the second electrode at a portion of the photoelectric conversion layer surrounded by the member, and an area of orthogonal projection to the light incident surface of the first electrode is smaller than an area of orthogonal projection to the light incident surface of the second surface.

Abstract: The semiconductor manufacturing device includes: a lower substrate support base configured to support a diamond substrate; an upper substrate support base configured to support a semiconductor substrate; a support base drive unit configured to move the lower substrate support base and the upper substrate support base to bring the diamond substrate and the semiconductor substrate into close contact with each other under a state in which a pressure is applied to the diamond substrate and the semiconductor substrate in a thickness direction; and a second mechanism configured to deform a surface of the upper substrate support base opposed to the lower substrate support base so that a surface of the semiconductor substrate opposed to the diamond substrate forms a parallel surface or a parallel plane with respect to a surface of the diamond substrate opposed to the semiconductor substrate.

Abstract: A multiplexer includes: a first filter including a series resonator connected in series and a parallel resonator connected in parallel between a common terminal and a first terminal, each of the series resonator and the parallel resonator including an IDT located on a piezoelectric substrate, first and second regions being alternately located in an extension direction of electrode fingers, which excite an acoustic wave, within an overlap region of the IDT in which the electrode fingers overlap, a width of at least one of the electrode fingers in the second region being greater than that in the first region, one or some resonators of the parallel resonator and the series resonator having a larger number of the second regions than a remaining resonator; and a second filter connected between the common terminal and a second terminal and having a passband higher than a passband of the first filter.

Abstract: There is provided a structure capable of ensuring a bearing surface pressure on an inner diameter side and an outer diameter side of a washer even if a thickness of the washer is suppressed. In a washer used at a fastening portion of a vehicle, a configuration in which a bearing surface is sectionalized into two faces, an inner abutting face and an outer abutting face, by an annular groove is adopted.

Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes first regions and second regions alternately arranged in an extension direction of electrode fingers, which excite an acoustic wave, in an overlap region in which the electrode fingers overlap, at least one electrode finger of the electrode fingers in the second regions having a different width from the at least one electrode finger in the first regions, a width of an outer second region of the second regions in the extension direction differs from a width of an inner second region of the second regions.

Abstract: A sprayable sunscreen cosmetic contains substantially no ultraviolet ray scattering agents which cause whiteness, and which is transparent immediately after being applied/sprayed, and that has excellent ultraviolet ray protection effect and a good sensation in use. The ultraviolet ray protection effect is not reduced, and the effects improve when in contact with water. A water-in-oil emulsified sunscreen cosmetic comprises: (A) 6 to 40 mass % of an ultraviolet ray absorbing agent; (B) an organically modified clay mineral; (C) an oil phase thickener other than the aforementioned (B); (D) a silicone-based surfactant having an HLB of less than 8; (E) a spherical resin powder; and (F) a volatile silicone oil; wherein a ratio defined as [total amount of ingredient (B) and ingredient (C)]/[total amount of (G) non-volatile liquid oils other than silicone oils] is at least 0.04 and less than 0.68.

Abstract: An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode that is located on the piezoelectric substrate and excites an acoustic wave; and a silicon oxide film that is located on the piezoelectric substrate so as to cover the comb-shaped electrode, and has a total concentration of carbon (C), hydrogen (H), nitrogen (N), and fluorine (F) equal to or less than 3.5 atomic %.

Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT located on the piezoelectric substrate and including a pair of comb-shaped electrodes facing each other, each of the pair of comb-shaped electrodes including a grating electrode exciting an acoustic wave and a bus bar to which the grating electrode is connected, wherein an anisotropy coefficient in a cross region where the grating electrodes of the pair of comb-shaped electrodes cross each other is positive; an anisotropy coefficient in a gap region located between a tip of the grating electrode of one of the pair of comb-shaped electrodes and the bus bar of the other is less than the anisotropy coefficient in the cross region, and an acoustic velocity of an acoustic wave propagating through the gap region is equal to or less than an acoustic velocity of an acoustic wave propagating through the cross region at an antiresonant frequency.

Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes comb-shaped electrodes facing each other, each of the comb-shaped electrodes having grating electrode and a bus bar connected to the grating electrodes, a duty ratio of grating electrodes of the comb-shaped electrodes in a center region of an overlap region differing from a duty ratio of grating electrodes of the comb-shaped electrodes in an edge region of the overlap region in an arrangement direction of the grating electrodes, the grating electrodes of each of the comb-shaped electrodes overlapping with the grating electrodes of the other in the overlap region, a grating electrode of a first one of the comb-shaped electrodes in the center region having a different width from a grating electrode of a second one of the comb-shaped electrodes in the center region.

Abstract: An acoustic wave device includes: a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less; and a grating electrode that is composed of one or more metal films laminated on the substrate, and excites an acoustic wave, wherein when a density of each metal film in the one or more metal films is represented by ?i, a Poisson's ratio of each metal film is represented by Pi, a film thickness of each metal film is represented by hi, a density of Cu is represented by ?0, a Poisson's ratio of Cu is represented by P0 and a pitch is represented by ?, a total value of “(hi/?)×(?i/?0)×(Pi/P0)” for each metal film with respect to the one or more metal films is more than 0.08.

Abstract: An acoustic wave device includes: a piezoelectric substrate; and a pair of comb-shaped electrodes that is located on the piezoelectric substrate, includes a metal film, and excites a surface acoustic wave, the metal film being mainly composed of a metal having a melting point equal to or higher than a melting point of Pt, the metal film having a first region in which a crystal grain has a columnar shape and a second region that is located on and/or under the first region in a stacking direction and has less crystallinity than the first region or has an amorphous structure.

Abstract: A vehicle headlamp includes a projection lens, a first lens, a second lens, a first light source, and a second light source. The first lens and the second lens are disposed behind the projection lens. The first light source is disposed behind the first lens. The second light source is disposed behind the second lens. The first lens and the second lens are disposed so as to deviate from an optical axis of the projection lens and to be opposite to each other.

Abstract: A lip cosmetic has a high transparency without giving unnatural whiteness and exerts a remarkable effect of ultraviolet ray protection over a broad wavelength range including the UVA and UVB regions. The lip cosmetic includes (A) at least 5% by mass of UV absorbers; wherein said (A) UV absorbers comprises (A1) at least one UV absorber selected from a group consisting of octocrylene, dimethicodiethylbenzalmalonate and diethylamino hydroxybenzoyl hexyl benzoate, and (A2) ethylhexyl methoxycinnamate; (B) a high-viscosity oil component in a range of 30% by mass to 70% by mass thereof; (C) a low-viscosity oil component in a range of 20% by mass to 40% by mass thereof, and (D) titanium dioxide and zinc oxide of which a total content is at most 0.5% by mass thereof; and wherein a sun-protection-factor (SPF) of the lip cosmetic is at least 20, and a critical wavelength thereof is at a shortest 370 nm.

Abstract: Provision of a stabilized crystal of 6-(3-chloro-2-fluorobenzyl)-1-[(S)-1-hydroxymethyl-2-methylpropyl]-7-methoxy-4-oxo-1,4-dihydroquinoline-3-carboxylic acid (compound A). A crystal of compound A, which shows a particular X-ray powder diffraction pattern of a characteristic diffraction peaks at diffraction angles 2?(°) as measured by X-ray powder diffractmetry.