Abstract: There is provided a silicon carbide composite body that can be expected to have efficient heat conduction and electrical conduction between bonding base materials. The silicon carbide composite body includes a first base material including silicon carbide having a silicon oxide layer SiOx formed on the surface and a second base material which has an oxide layer MOy with an element M, which is one or more of metals that forms an oxide in the atmosphere (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, and C in diamond on the surface, and is bonded to the first base material such that the MOy side faces the SiOx side, and when at least some of C in silicon carbide forms C—O-M bonds and/or at least some of Si in the silicon carbide forms Si—O?M bonds, the second base material is bonded to the first base material.

Abstract: This diamond composite includes a first base substrate which has an oxide layer of element M and contains the element M in the composition and a second base substrate which is bonded to the oxide layer and is composed of diamond, in which the M is one or more selected from a metal element with which an oxide can be formed, Si, Ge, As, Se, Sb, Te, and Bi, and the second base substrate is bonded to the oxide layer of the first base substrate by M-O—C bonding of at least some C atoms on the surface of the diamond constituting the second base substrate.

Abstract: A composite that includes a base including an oxide layer MOx of an element M on a surface thereof and a diamond crystal base bonded to the surface of the base. The M is one or more selected from among metal elements capable of forming an oxide (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, Te, and Bi, and the diamond crystal base is bonded to the surface of the base by M-O-C bonding of at least some C atoms of the (111) surface of the diamond crystal base.