Abstract: Provided is a ceramic filter for a beverage, the ceramic filter requiring a permeation time ranging from 3 seconds to 15 seconds in a case where 150 ml of hot water having a temperature of 90° C. is introduced, having a total pore volume of 0.230 to 0.270 cm3/g, and having a median pore diameter of 100 to 160 ?m. Also provided is a method for manufacturing the ceramic filter.

Abstract: A ceramic filter 1 requires a permeation time ranging from 3 seconds to 15 seconds in a case where 150 ml of hot water having a temperature of 90° C. is introduced, has a total pore volume of 0.230 to 0.270 cm3/g, and has a median pore diameter of 100 to 160 ?m. A method for manufacturing the ceramic filter 1 includes a kneading process of obtaining a kneaded material in which 55 to 65 mass % of alumina, 6 to 12 mass % of bentonite, 6 to 10 mass % of water-insoluble organic fine particles, and 15 to 30 mass % of water are mixed, a primary molding process of molding a primary molded article by manually pressing the kneaded material against a filter mold, a secondary molding process of molding a secondary molded article by performing press working on the primary molded article molded in the primary molding process, and a firing process of firing the secondary molded article molded in the secondary molding process.

Abstract: For example, a surface emitting semiconductor laser and a driver IC are arranged three-dimensionally to put a submounting substrate between them, and LSIs such as a CPU, etc. are mounted on the driver IC. The surface emitting semiconductor laser is formed of the epitaxial lift-off (ELO) process and has a thickness of about 10 ?m. A through hole is provided to all the submounting substrate, the surface emitting semiconductor laser, the driver IC, and the LSIs. These parts are connected electrically mutually via conductor in the through hole.

Abstract: For example, a surface emitting semiconductor laser and a driver IC are arranged three-dimensionally to put a submounting substrate between them, and LSIs such as a CPU, etc. are mounted on the driver IC. The surface emitting semiconductor laser is formed of the epitaxial lift-off (ELO) process and has a thickness of about 10 &mgr;m. A through hole is provided to all the submounting substrate, the surface emitting semiconductor laser, the driver IC, and the LSIs. These parts are connected electrically mutually via conductor in the through hole.

Abstract: A microorganism which does not form substantial foams during aerobic cultivation and which has an ability of producing erythritol is obtained by cultivating a microorganism having an ability of producing erythritol in a liquid medium, removing a microbial aggregate from the culture, collecting a microorganism which has physical properties such that when fractionated with water and a water-insoluble solvent the microorganism remains in a water layer in an amount of at least 20% or which has a hydrophobicity of 80% or less and further collecting a microorganism which does not form substantial foams during aerobic cultivation.

Abstract: Microbial cells and/or a preparation thereof of a microorganism is allowed to act on ester of .gamma.-halogenated-acetoacetic acid, and its carbonyl group at .beta.-position is stereospecifically reduced to produce ester of (S)-.gamma.-halogenated-.beta.-hydroxybutyric acid in a short period of time at a highly accumulated degree and at a high yield, the microorganism being selected from the group consisting of those belonging to the genera Phoma, Nectria, Pseudonectria, Spondylocladium, Melanospora, Metarhizium, Gliocladium, Pestalotia, Pestalotiopsis, Curvularia, Hormonema, Sydowia, Sarcinomyces, Dothiora, Xanthothecium, Dothidea, Pringsheimia, and Selenophoma.

Abstract: A method for storing adsorbent particles of synthetic resin porous particles for a long period of time without causing decrease in the adsorbing performance and without attaching fungi, which method can be effected by irradiation of the porous particles hermetically sealed in a packing material such as a bag with radioactive rays at a dose of 5 to 20 kGy and storage of the resulting adsorbent particles in the hermetically sealed condition.

Abstract: Microbial cells and/or a preparation therefrom of a microorganism is allowed to act on an ester of .gamma.-substituted-acetoacetic acid, and a carbonyl group at its .beta.-position is stereospecifically reduced, wherein the microorganism is selected from the group consisting of those belonging to the genera Yarrowia, Filobasidium, Metschnikowia, Galactomyces, Ambrosiozyma, Trichosporonoides, Aureobasidium, Phaeococcomyces, Rosulomyces, Dothichiza, Emericellopsis, Calonectria, Colletotrichum, and Ceratocystis, preferably, the microorganism is microorganism belonging to the genus Aureobasidium. Thus an optically active ester of .gamma.-substituted-.beta.-hydroxybutyric acid having a high optical purity is produced in a short period of time at a high accumulated concentration and a high yield.

Abstract: This disclosure describes a novel antibiotic designated Vermisporin produced in a microbiological fermentation using, for example, a new strain of Ophiobolus Vermisporus L-8. This novel antibiotic is an active antibacterial, especially anti-anaerobic bacterial agent.

Abstract: An APD includes a substrate formed of n.sup.+ -type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconductor, whose aluminum content ratio x is typically within a range from 0.1 to 0.3. A light absorbing layer is formed of an-type GaSb semiconductor on the substrate. An avalanche multiplication layer is formed of n-type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconduct, whose aluminum content ratio x is from 0.02 to 0.1, typically 0.065, so that an ionization rate ratio of positive and negative carriers is essentially maximized by a resonant impact ionization phenomenon. A p.sup.+ -region is formed as a surface layer of n-type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconductor on the avalanche multiplication layer or directly in the avalanche multiplication layer so as to form a pn junction. Electrodes are formed on the p-type region and the substrate so as to apply a bias voltage to the APD.

Abstract: An APD of the invention has its avalanche multiplication layer, made of a material which can cause a resonant impact ionization therein, between its window layer having a big band gap energy and light-absorbing layer having a band gap energy smaller than the window layer. The layout of the invention lowers field intensity in the light absorbing layer, thus, a dark current produced by a tunnel effect in the light absorbing layer is reduced. Because of great amount of ionization ratio in the resonant impact ionization phenomena, both excessive noise factor and the applied operating DC voltage to the APD can be much less than that of the prior art APD without employing the resonant impact ionization, as well as the operation speed can be increased.

Abstract: This disclosure describes a novel antibiotic designated Vermisporin produced in a microbiological fermentation using, for example, a new strain of Ophiobolus Vermisporus L-8. This novel antibiotic is an active antibacterial, especially anti-anaerobic bacterial agent.

Abstract: Muconic acid is obtained from the culture of strains of Arthrobacter sp. mutant strains, strains belonging to Corynebacterium acetoacidophilum, Corynebacterium lilium, genus Brevibacterium or genus Microbacterium.

Abstract: A buried structure avalanche multiplication photodiode (APD) is provided with a surface level difference between the multiplication region and guard ring region. The APD has a so-called separated absorption and multiplication region structure comprising an n-InGaAs light absorbing layer and an n-InP multiplication layer. The surface level difference is provided by selective growth of the layer in which the guard ring is formed or selective removal of the layer over the multiplication region. In the APD, the pn junction is level throughout the multiplication region and guard ring region or is made farther apart from the light absorbing layer in the guard ring region than in the multiplication region, and a significant reduction of dark current due to tunneling current in the InGaAs layer and/or InGaAsP layer is obtained. Moreover, the breakdown voltage difference of the pn junction in the multiplication region and the guard ring region has also been increased.