Abstract: A pattern arranged on an object is sequentially transferred onto a wafer arranged on an image plane side of a projection optical system so as to form a matrix shaped first area, which is made up of a plurality of divided areas, and in the periphery of the first area an overexposed second area is formed. And, a formed state of an image of the pattern in a plurality of divided areas is detected by an image processing method such as contrast detection. In this case, since the overexposed second area is located on the outer side of the first area, the borderline of the divided areas in the outermost section of the first area and the second area can be detected with a good S/N ratio, and the position of other divided areas can be calculated with substantial precision, with the borderline serving as datums. Accordingly, the formed state of the pattern image can be detected in a short period of time.

Abstract: While changing a focus position and a dose amount on the image plane by respective amounts, a mark including a measurement pattern and a reference pattern is transferred sequentially onto a plurality of part areas arranged in a matrix on a wafer via the projection optical system. And after the wafer is developed, an image of each of the plurality of part areas on the wafer developed is picked up, and matching with a template is performed on the image datum of each part area. Because a feature which does not disappear even with having been overdosed and of which the positional relation with the measurement pattern is known is used as the reference pattern, template-matching can be readily performed on the image datum of each part area by using the reference pattern as a reference, and an exposure condition under consideration (the best focus position) is determined based on the matching results, objective and quantitative, for the part areas (steps 237 through 249).

Abstract: While changing a focus position and a dose amount on the image plane by respective amounts, a mark including a measurement pattern and a reference pattern is transferred sequentially onto a plurality of part areas arranged in a matrix on a wafer via the projection optical system. And after the wafer is developed, an image of each of the plurality of part areas on the wafer developed is picked up, and matching with a template is performed on the image datum of each part area. Because a feature which does not disappear even with having been overdosed and of which the positional relation with the measurement pattern is known is used as the reference pattern, template-matching can be readily performed on the image datum of each part area by using the reference pattern as a reference, and an exposure condition under consideration (the best focus position) is determined based on the matching results, objective and quantitative, for the part areas (steps 237 through 249).