Abstract: A method of manufacturing a CIS solar battery includes preparing a layer-shaped member that is configured by a substrate, a first electrode layer, a CIS layer, and a second electrode layer; setting a temperature of the layer-shaped member to a second temperature that is lower than the first temperature; forming a layer of a layer forming substance having a higher linear expansion coefficient than the substrate in a solid state of the layer on the second electrode layer; and cooling the layer-shaped member. In the method, a thin-film CIS solar battery is acquired by peeling the CIS layer from the first electrode layer along with contraction of the layer of the layer forming substance caused by the cooling of the layer-shaped member.

Abstract: A method of manufacturing a CIS solar battery includes preparing a layer-shaped member that is configured by a substrate, a first electrode layer, a CIS layer, and a second electrode layer; setting a temperature of the layer-shaped member to a second temperature that is lower than the first temperature; forming a layer of a layer forming substance having a higher linear expansion coefficient than the substrate in a solid state of the layer on the second electrode layer; and cooling the layer-shaped member. In the method, a thin-film CIS solar battery is acquired by peeling the CIS layer from the first electrode layer along with contraction of the layer of the layer forming substance caused by the cooling of the layer-shaped member.

Abstract: The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

Abstract: The present invention provides a CIGS film production method which ensures that a CIGS film excellent in conversion efficiency can be produced at lower costs with higher reproducibility, and a CIGS solar cell production method using the CIGS film production method. The CIGS film production method includes: a stacking step of stacking an (A) layer containing indium, gallium and selenium and a (B) layer containing copper and selenium in this order in a solid phase over a substrate while heating at a temperature of higher than 250° C. and not higher than 400° C.; and a heating step of further heating the resulting stack of the (A) layer and the (B) layer to melt a compound of copper and selenium in the (B) layer into a liquid phase, whereby copper is diffused from the (B) layer into the (A) layer to cause crystal growth to provide a CIGS film.

Abstract: The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

Abstract: A CIGS film production method capable of suppressing oxidation of a front surface of a CIGS film, and a CIGS solar cell production method using the CIGS film production method includes the steps of: forming a first region having a Ga/(In+Ga) ratio progressively reduced as the thickness of the first region increases to a predetermined first thickness position from a back surface of the CIGS film; forming a second region having a Ga/(In+Ga) ratio progressively increased as the thickness of the second region increases to a predetermined second thickness position from the first region; and forming a third region on the second region by vapor-depositing Se and In, the third region having a Ga/(In+Ga) ratio progressively reduced toward a front surface of the CIGS film.

Abstract: A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.

Abstract: A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.

Abstract: A highly safe method of obtaining chalcopyrite film wherein a Ib group metal and IIIb group metal are sufficiently combined with a VIb group element by only heat treatment without using an atmosphere containing a VIb group element (Se, S, Te). A chalcopyrite film 10 made of a Ib-IIIb-VIb group compound is formed on a bottom electrode 3 that is formed on a substrate 2, by forming a precursor film 7 that includes a Ib group metal and a IIIb group metal on the bottom electrode 3 beforehand, depositing a VIb group element 9 on the precursor film 7, placing a cover 8 over the precursor film 7 on which the VIb group element 9 has been deposited, and with the Ib group metal, IIIb group metal and VIb group element between the bottom electrode 3 and cover 8, heat treatment is performed in an inert atmosphere to combine the Ib group metal and IIIb group metal with the VIb group element.