Abstract: There is provided an optical modulator in which positive holes produced in the valence band are not piled up, the electrostatic capacity can be decreased, the frequency response characteristic is improved, and which is capable of operating at a high speed. In an optical modulator comprising: an n-type clad layer; a stripe-like modulation layer elongated in the direction of light propagation and formed on the top surface of the n-type clad layer; a buffer layer formed on the top surface of the modulation layer; and a p-type clad layer formed on the top surface of the buffer layer, the buffer layer has its composition the band gap energy of which is higher by an energy due to a p-type acceptor level than that of the modulation layer, thereby to remove a difference in band gap energy between the modulation layer and the buffer layer.

Abstract: There is provided an optical modulator in which positive holes produced in the valence band are not piled up, the electrostatic capacity can be decreased, the frequency response characteristic is improved, and which is capable of operating at a high speed. In an optical modulator comprising: an n-type clad layer; a stripe-like modulation layer elongated in the direction of light propagation and formed on the top surface of the n-type clad layer; a buffer layer formed on the top surface of the modulation layer; and a p-type clad layer formed on the top surface of the buffer layer, the buffer layer has its composition the band gap energy of which is higher by an energy due to a p-type acceptor level than that of the modulation layer, thereby to remove a difference in band gap energy between the modulation layer and the buffer layer.