Abstract: Both organic waste or wastewater and methane-generating bacteria are contained in organic waste or wastewater. When organic waste or wastewater containing these bacteria is cultured as a base material, the hydrogen produced by the hydrogen-generating bacteria is consumed by the methane-generating bacteria. The purpose of the invention is achieved by controlling the biophase with heat treatment so that the activity of hydrogen-generating bacteria having sporulation ability contained in the organic waste is maintained, while the hydrogen-consuming, methane-producing bacteria are decreased. Specifically, this invention provides a method of effectively generating hydrogen gas using hydrogen-generating bacteria by adjusting the treatment temperature to 68-95° C., and adjusting the treatment time and pH.

Abstract: Both organic waste or wastewater and methane-generating bacteria are contained in organic waste or wastewater. When organic waste or wastewater containing these bacteria is cultured as a base material, the hydrogen produced by the hydrogen-generating bacteria is consumed by the methane-generating bacteria. The purpose of the invention is achieved by controlling the biophase with heat treatment so that the activity of hydrogen-generating bacteria having sporulation ability contained in the organic waste is maintained, while the hydrogen-consuming, methane-producing bacteria are decreased. Specifically, this invention provides a method of effectively generating hydrogen gas using hydrogen-generating bacteria by adjusting the treatment temperature to 68-95° C., and adjusting the treatment time and pH.

Abstract: A method of fabricating a silicon single crystal ingot and a method of fabricating a silicon wafer using the ingot, characterized in that: the method is structured in such a manner that the silicon single crystal ingot is pulled up from the silicon fused liquid 7 in which nitrogen N and carbon C are doped in polycrystalline silicon, by using the Czochralski method, and its nitrogen density is 1×1013-5×1015 atoms/cm3, and the carbon density is 5×1015-3×1016 atoms/cm3.

Abstract: A method of fabricating a silicon single crystal ingot and a method of fabricating a silicon wafer using the ingot, characterized in that: the method is structured in such a manner that the silicon single crystal ingot is pulled up from the silicon fused liquid 7 in which nitrogen N and carbon C are doped in polycrystalline silicon, by using the Czochralski method, and its nitrogen density is 1×1013-5×1015 atoms/cm3, and the carbon density is 5×1015-3×1016 atoms/cm3.

Abstract: A self-aligning type clutch release apparatus includes a clutch release bearing, bearing holding means for holding and guiding the clutch release bearing and a self-aligning coupling intermediate the bearing and bearing holding means. The coupling includes an aligning auxiliary member interposed between the clutch release bearing and the bearing holding means, first means for rendering the aligning auxiliary member rockable in all directions about a first point relative to the bearing holding means, second means for rendering the clutch release bearing rockable in all directions about a different point relative to the aligning auxiliary member, and third means for damping the rocking movement of the aligning auxiliary member relative to the bearing holding means and the rocking movement of the clutch release bearing relative to the aligning auxiliary member. Following alignment of the apparatus, the auxiliary member and the clutch release bearing are maintained in dynamically stable positions.

Abstract: A clutch release bearing assembly provided with a self-centering mechanism has a clutch releasing bearing device and bearing device holding means movable axially of a clutch by clutch operating means and holding the bearing device for self-centering. The bearing device holding means has a metallic portion and a synthetic resin portion formed integrally with the metallic portion. The metallic portion constitutes a drum-like base.