Abstract: A dual-gate transistor formed of two transistors connected in series between a first power terminal and a first node is used as a charging circuit for charging a gate node (first node) of a transistor intended to pull up an output terminal of a unit shift register. The dual-gate transistor is configured such that the connection node (second node) between the two transistors constituting the dual-gate transistor is pulled down to the L level by the capacitive coupling between the gate and second node in accordance with the change of the gate from the H level to the L level.

Abstract: An object is to obtain a touch panel with improved sensitivity and enhanced display quality.

Abstract: A photoelectric conversion device includes a thin film transistor that is placed on a substrate, a photodiode that is connected to a drain electrode of the thin film transistor and includes an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes, a first interlayer insulating film that covers at least the upper electrode, a second interlayer insulating film that is placed in an upper layer of the first interlayer insulating film and covers the thin film transistor and the photodiode, and a line that is connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.

Abstract: A first contact hole formed in a gate driving circuit is covered with an electrically conductive oxide film formed to be connected to the first contact hole and having a first pattern. The periphery of the electrically conductive oxide film is surrounded by an electrically conductive oxide film (a sacrifice electrode) formed simultaneously with the electrically conductive oxide film and having a second pattern form.

Abstract: A parasitic capacitance is reduced between a lower electrode of a photodiode and data line. A photosensor according to this invention includes a glass substrate; an underlying insulator which is provided on the glass substrate, and has a dielectric constant lower than that of the glass substrate; and a switching element which is formed by laminating a gate electrode, a gate insulating film, and a semiconductor layer on the underlying insulator, and includes a drain electrode connected to the semiconductor layer. The drain electrode has an extended portion which directly contacts a surface of the underlying insulator. The photosensor further includes a photodiode which is provided on the extended portion of the drain electrode.

Abstract: For a photosensor, an array substrate is provided, wherein the edge of a photodiode is enclosed by the opening edge of a contact hole formed on a drain electrode.

Abstract: A dual-gate transistor formed of two transistors connected in series between a first power terminal and a first node is used as a charging circuit for charging a gate node (first node) of a transistor intended to pull up an output terminal of a unit shift register. The dual-gate transistor is configured such that the connection node (second node) between the two transistors constituting the dual-gate transistor is pulled down to the L level by the capacitive coupling between the gate and second node in accordance with the change of the gate from the H level to the L level.

Abstract: In a temperature compensating circuit for an oscillator, a reference voltage is applied between a pair of opposing nodes in a basic bridge circuit having a temperature sensitive element inserted in an arbitrary branch of the bridge. An input terminal of the oscillator is connected between the other pair of opposing nodes, from which nodes an output voltage of the bridge is supplied to the oscillator.