Abstract: A pad electrode is formed in an uppermost wiring layer of a multilayer wiring layer formed on a semiconductor substrate. A dielectric film is formed to cover the pad electrode. An opening portion is formed in the dielectric film so as to reach the pad electrode. In the opening portion, a conductive film that is a part of a conductive layer is electrically connected to the pad electrode. On a side surface of the conductive film, an oxide layer in which a material contained in the conductive film is oxidized is formed. A width of the oxide layer is 200 nm or more.

Abstract: A electronic device includes: a plurality of substrates each including a substrate main body and a heat generating element, the plurality of substrates being provided side by side in a plate thickness direction; a cooler which is provided between the substrates adjacent to each other, and configured to cool the heat generating element; and a piping which is made of metal, and is connected to the cooler. The piping includes: an inner piping portion which is arranged in an inter-substrate region, and is connected to the cooler; an inner piping extending portion provided so as to extend from the inner piping portion to an outer side of the inter-substrate region; and an outer piping portion which is arranged to be shifted from the inter-substrate region, and is connected to the inner piping extending portion. The outer piping portion includes a movable piping portion that is deformable.

Abstract: A cooling apparatus (100) cools a heat-generating instrument, such as an electronic instrument (2), installed in an installation apparatus. The cooling apparatus (100) includes a refrigerant flow path configured circularly by sequentially connecting a pump (1) that circulates a refrigerant in a liquid state, a cooler (3) that cools the heat-generating instrument with the refrigerant, and a radiator (5) that cools the refrigerant. The cooling apparatus (100) includes a discharge-side heat exchanger (7) provided in a flow path from the pump (1) to the cooler (3) in the refrigerant flow path, a suction-side heat exchanger (8) provided in a flow path from the radiator (5) to the pump (1) in the refrigerant flow path, and a Peltier device (9) that is provided between the discharge-side heat exchanger (7) and the suction-side heat exchanger (8), and transfers heat from the refrigerant flowing through the suction-side heat exchanger (8) to the refrigerant flowing through the discharge-side heat exchanger (7).

Abstract: A control apparatus includes a processor that determines whether an ice generation condition is satisfied on the basis of at least one or both of a state of a heat source of a vehicle and an outside air temperature after an operation stop of a drive source of the vehicle. If the ice generation condition is satisfied, the processor repeats an ice-crushing operation at a predetermined time interval in a predetermine ice-crushing time period by turning on and thereafter turning off the relay. The predetermined ice-crushing time period is determined on the basis of a temperature difference between a temperature of the fixed contact or the movable contact of the relay and a temperature of an internal atmosphere inside the relay. The predetermined time interval is a time period in which the ice on the fixed contact and the movable contact of the relay grows to a predetermined size.

Abstract: A cooling device (100) is a device that cools a heat generator such as an electronic device (2) mounted in a mounting device such as an artificial satellite. The cooling device (100) includes a refrigerant flow path (10) configured annularly by sequentially connecting a pump (3) that circulates a liquid refrigerant, a cooler (4) that cools a heat generator such as an electronic device (2) with the refrigerant, and a heat exchanger (5) that cools the refrigerant. In addition, the cooling device (100) has a vapor mixing unit (20) that mixes the vapor generated by heat of at least one of heat intrusion from an outside to a mounting device such as an artificial satellite and heat generation of a heat generator such as the electronic device (2) into the refrigerant flowing into a cooler (4) in the refrigerant flow path (10).

Abstract: A electronic device includes: a plurality of substrates each including a substrate main body and a heat generating element, the plurality of substrates being provided side by side in a plate thickness direction; a cooler which is provided between the substrates adjacent to each other, and configured to cool the heat generating element; and a piping which is made of metal, and is connected to the cooler. The piping includes: an inner piping portion which is arranged in an inter-substrate region, and is connected to the cooler; an inner piping extending portion provided so as to extend from the inner piping portion to an outer side of the inter-substrate region; and an outer piping portion which is arranged to be shifted from the inter-substrate region, and is connected to the inner piping extending portion. The outer piping portion includes a movable piping portion that is deformable.

Abstract: A compressor includes a container provided with an oil reservoir which is provided at a bottom portion of the container to allow oil to be collected in the oil reservoir. In the container, an electric motor mechanism, a rotary shaft, a compression mechanism, and a frame which fixes the compression mechanism to the container are provided. In the frame, a suction port is formed to cause refrigerant having flowed into the space to flow into the compression mechanism, and each of a suction portion and a connection port of the suction pipe, is located at a position which is higher than or the same as the level of the rotary shaft as seen in a rotation axial direction A rib in a first flow passage extends downwards in the direction of gravity from the connection port, extends through an area located above the oil reservoir, and reaches the suction port.

Abstract: Provided is a flow rate measuring device including a connector portion, a main body portion, an internal flow passage, and a flow rate detection element. The internal flow passage includes a main flow passage and a sub-flow passage. The sub-flow passage includes a flow rate detection element-side flow passage and connection flow passages. The main flow passage includes an introduction portion, a small flow passage sectional area portion, and an exit portion. The connection flow passages include an upstream-side connection flow passage and a downstream-side connection flow passage. The main flow passage and the flow rate detection element-side flow passage are formed so as to be symmetric with respect to a plane having a flow direction of the fluid to be measured flowing through the pipe as a normal. The main flow passage has a portion at the plane of symmetry as the small flow passage sectional area portion.

Abstract: A refrigeration cycle apparatus includes: a refrigerant circuit including a compressor, a condenser, an expansion device, and an evaporator; an oil separator provided at a refrigerant discharge side of the compressor and configured to separate refrigerant and a refrigerating machine oil; a first oil return path connecting the oil separator to a refrigerant suction side of the compressor; a flow control device provided on the first oil return path and configured to reduce pressure of the refrigerant and the refrigerating machine oil; an oil reservoir provided to branch from the first oil return path between the flow control device and the refrigerant suction side of the compressor and configured to store the refrigerating machine oil; a second oil return path on which the oil reservoir is provided and through which the oil accumulated in the oil reservoir flows when being returned to the compressor.

Abstract: A semiconductor device includes semiconductor substrate having outer peripheral sides in plan view, and at least a pair of first bonding pad and second bonding pad formed over the semiconductor substrate. The second bonding pad has a shape obtained by rotating the first bonding pad by 180 degrees in plan view. The first bonding pad and the second bonding pad are arranged so as to face each other in a first direction crossing the outer peripheral side. The first bonding pad has a first portion and a second portion of rectangular shape in the second direction along the outer peripheral side. A width of the first portion in the first direction is greater than a width of the second portion in the first direction.

Abstract: Provided is a flow rate measuring device including a connector portion, a main body portion, an internal flow passage, and a flow rate detection element. The internal flow passage includes a main flow passage and a sub-flow passage. The sub-flow passage includes a flow rate detection element-side flow passage and connection flow passages. The main flow passage includes an introduction portion, a small flow passage sectional area portion, and an exit portion. The connection flow passages include an upstream-side connection flow passage and a downstream-side connection flow passage. The main flow passage and the flow rate detection element-side flow passage are formed so as to be symmetric with respect to a plane having a flow direction of the fluid to be measured flowing through the pipe as a normal. The main flow passage has a portion at the plane of symmetry as the small flow passage sectional area portion.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device which ensure improved reliability, permit further miniaturization, and suppress the increase in manufacturing cost. The semiconductor device includes: a pad electrode formed in the uppermost wiring layer of a multilayer wiring layer formed over a semiconductor substrate; a surface protective film formed in a manner to cover the pad electrode; an opening made in the surface protective film in a manner to expose the pad electrode partially; and a conductive layer formed over the pad electrode exposed at the bottom of the opening. The thickness of the conductive layer formed over the pad electrode is smaller than the thickness of the surface protective film formed over the pad electrode.

Abstract: A compressor includes a container provided with an oil reservoir which is provided at a bottom portion of the container to allow oil to be collected in the oil reservoir. The container is provided such that a rotary shaft is inclined relative to the direction of gravity or to be laid horizontal. In the container, an electric motor mechanism, the rotary shaft, a compression mechanism and a frame which fixes the compression mechanism to the container are provided. To the container, a suction pipe is connected to cause refrigerant to flow into space between the frame and the electric motor mechanism. In the frame, a suction port is formed to cause the refrigerant having flowed into the space to flow into the compression mechanism, and each of the suction portion and a connection port of the suction pipe, which connects with the container is located at a position which is higher than or the same as the level of the rotary shaft as seen in a rotation axial direction.

Abstract: An air-conditioning apparatus includes: a plurality of compressors included in one or more refrigerant circuits which air-condition a target space to be air-conditioned; a power converter which converts electric power supplied from a power source unit and supply the compressors with electric power for driving the compressors at an arbitrary drive rotation speed; a switching device which perform switching between a power supplying operation to cause each of the compressors to be supplied with electric power from the power converter and a power supplying operation to cause each of the compressors to be supplied with electric power directly from the power source unit; and a controller which controls the power converter and the switching device.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device which ensure improved reliability, permit further miniaturization, and suppress the increase in manufacturing cost. The semiconductor device includes: a pad electrode formed in the uppermost wiring layer of a multilayer wiring layer formed over a semiconductor substrate; a surface protective film formed in a manner to cover the pad electrode; an opening made in the surface protective film in a manner to expose the pad electrode partially; and a conductive layer formed over the pad electrode exposed at the bottom of the opening. The thickness of the conductive layer formed over the pad electrode is smaller than the thickness of the surface protective film formed over the pad electrode.

Abstract: A refrigeration cycle apparatus includes: a refrigerant circuit including a compressor, a condenser, an expansion device, and an evaporator; an oil separator provided at a refrigerant discharge side of the compressor and configured to separate refrigerant and a refrigerating machine oil; a first oil return path connecting the oil separator to a refrigerant suction side of the compressor; a flow control device provided on the first oil return path and configured to reduce pressure of the refrigerant and the refrigerating machine oil; an oil reservoir provided to branch from the first oil return path between the flow control device and the refrigerant suction side of the compressor and configured to store the refrigerating machine oil; a second oil return path on which the oil reservoir is provided and through which the oil accumulated in the oil reservoir flows when being returned to the compressor.

Abstract: A solid-state image sensor includes an image sensing unit in which a plurality of pixels are arrayed, a plurality of readout units configured to read out signals from the image sensing unit, a detector configured to detect an occurrence of a latch-up in each of the plurality of readout units, and a controller configured to control power supply to the plurality of readout units. The plurality of readout units are configured to read out signals from a same pixel in the image sensing unit. The controller is configured to shut off power supply to at least part of a readout unit in which the occurrence of the latch-up has been detected out of the plurality of readout units and thereafter supply power to the at least part.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.