Abstract: A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.

Abstract: An object of the present technology is to provide an image sensor and a photodetector that are capable of reducing power consumption of an AD conversion unit. The image sensor includes a comparator, in which the comparator includes a differential input unit that includes a first input unit connected to a first capacitance unit and a second input unit connected to a second capacitance unit, a current mirror unit that includes a first resistance element connected to the differential input unit and an NMOS transistor diode-connected via the first resistance element, a second resistance element connected to the differential input unit, and a switch unit provided between the first input unit and a junction between the first resistance element and the NMOS transistor, and between the second input unit and a junction between the second resistance element and the current mirror unit.

Abstract: To provide an image capturing device capable of suppressing a decrease of a dynamic range of the entire image capturing device caused by an input transistor of a comparator inserted between a signal line and a load current source in an analog-digital converter. The image capturing device of the present disclosure includes: a load current source; a comparator that includes an input transistor connected between a signal line that transmits a signal read from a pixel and the load current source; and a reference signal supply section that supplies a predetermined reference signal to a charge-voltage conversion section of the pixel.

Abstract: Provided are an imaging device capable of suppressing an error in inversion timing of a comparison result when an analog pixel signal is compared with a predetermined reference signal, and an electronic apparatus including the imaging device. An imaging device of the present disclosure includes: a load current source; a comparator that has an input transistor connected between the load current source and a signal line transmitting a signal read from a pixel; a first capacitor that inputs a predetermined reference signal to a gate electrode of the input transistor; and a second capacitor connected between the gate electrode of the input transistor and a reference potential node. Furthermore, an electronic apparatus of the present disclosure includes the imaging device having the above-described configuration.

Abstract: A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.

Abstract: In a solid-state imaging element provided with a comparator for each column, responsiveness of the comparator is improved. An input transistor outputs, from a drain, a potential within a range from one side to the other side of a pair of output potentials on the basis of whether or not an input potential input to a source and a predetermined reference potential input to a gate substantially coincide with each other. A first current source supplies a constant current. A capacitor is inserted between the source of the input transistor and a first current source. A cutoff switch disconnects a drain of the input transistor from a connection node within a predetermined period for initializing the connection node between the capacitor and the first current source to a lower one of the pair of output potentials, and connects the connection node with the drain of the input transistor outside the predetermined period.

Abstract: A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.

Abstract: Provided is an image sensor including: a pixel section configured to include a plurality of pixels arranged therein; and an AD conversion unit configured to perform analog-to-digital (AD) conversion on a pixel signal on the basis of a result of comparison between a first voltage of a signal, which is obtained by adding, via capacitances, the pixel signal of the pixel and a reference signal that linearly changes in a direction opposite to the pixel signal, with a second voltage serving as a reference.

Abstract: It is an object of the present technology to provide an image sensor capable of reducing crosstalk in an AD conversion unit. The image sensor includes: capacitors in an even-numbered column region; and a capacitor in an odd-numbered column region disposed facing the capacitors in the even-numbered column region with different areas.

Abstract: The dynamic range of a solid-state imaging element including a comparator is expanded. The solid-state imaging element includes a pixel circuit and a comparison transistor. In the solid-state imaging element, the pixel circuit generates a pixel signal and outputs the pixel signal to a vertical signal line. Further, the comparison transistor has a source connected to a constant current source configured to supply a constant current to the vertical signal line. The comparison transistor has a gate to which a predetermined reference signal is input. Further, the comparison transistor has a drain from which a comparison result between the pixel signal and the reference signal is output.

Abstract: It is an object of the present technology to provide an image sensor capable of reducing crosstalk in an AD conversion unit. The image sensor includes: capacitors in an even-numbered column region; and a capacitor in an odd-numbered column region disposed facing the capacitors in the even-numbered column region with different areas.

Abstract: A solid-state image pick-up device of the present disclosure includes a pixel array unit obtained by disposing a plurality of unit pixels, each of which includes a photoelectric conversion unit, in a matrix form, an amplifier unit that adjusts a level of a pixel signal output from a unit pixel through a vertical signal line provided to correspond to column arrangement of the pixel array unit, a sample and hold unit that samples and holds a pixel signal passing through the amplifier unit, and an analog-digital conversion unit that converts the pixel signal output from the sample and hold unit into a digital signal. Further, the sample and hold unit includes at least three capacitors that hold pixel signals and performs fetching of a pixel signal to one capacitor and outputting of an image signal fetched to another capacitor in advance to the analog-digital conversion unit in parallel.

Abstract: It is an object of the present technology to provide an image sensor capable of reducing crosstalk in an AD conversion unit. The image sensor includes: capacitors in an even-numbered column region; and a capacitor in an odd-numbered column region disposed facing the capacitors in the even-numbered column region with different areas.

Abstract: An image sensor including a pixel array section in which a plurality of pixels including photoelectric conversion units is disposed, and a comparator that compares an analog pixel signal output from the pixels to a predetermined reference signal, and outputs a comparison result according to a signal level of the pixel signal. The comparator includes differential pair transistors, a first load transistor connected in series with a first transistor of the differential pair, and a second load transistor connected in series with a second transistor of the differential pair. The first transistor of the differential pair accepts a signal obtained by combining the pixel signal and the predetermined reference signal as a gate input, the second transistor of the differential pair accepts a predetermined voltage as a gate input.

Abstract: A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.

Abstract: An image sensor including a pixel array section in which a plurality of pixels including photoelectric conversion units is disposed, and a comparator that compares an analog pixel signal output from the pixels to a predetermined reference signal, and outputs a comparison result according to a signal level of the pixel signal. The comparator includes differential pair transistors, a first load transistor connected in series with a first transistor of the differential pair, and a second load transistor connected in series with a second transistor of the differential pair. The first transistor of the differential pair accepts a signal obtained by combining the pixel signal and the predetermined reference signal as a gate input, the second transistor of the differential pair accepts a predetermined voltage as a gate input.

Abstract: An object of the present technology is to provide an image sensor and a photodetector that are capable of reducing power consumption of an AD conversion unit. The image sensor includes a comparator, in which the comparator includes a differential input unit that includes a first input unit connected to a first capacitance unit and a second input unit connected to a second capacitance unit, a current mirror unit that includes a first resistance element connected to the differential input unit and an NMOS transistor diode-connected via the first resistance element, a second resistance element connected to the differential input unit, and a switch unit provided between the first input unit and a junction between the first resistance element and the NMOS transistor, and between the second input unit and a junction between the second resistance element and the current mirror unit.

Abstract: Solid-state image capturing elements are disclosed. In one example, a solid-state image capturing element includes a noise-cancelling-signal generating circuit connected to a pixel power source. It executes a gain change and a polarity inversion on a first noise cancelling signal to output a second noise cancelling signal. The element also includes a DA converter that outputs a reference signal and converts a current of the second noise cancelling signal into a voltage to superpose the converted voltage on the reference signal; a comparator that receives inputs of the reference signal and a pixel signal and outputs an inversion signal according to the pixel signal and a gain setting; a counter that converts an inversion timing of the comparator into a digital value; and a gain controlling unit that outputs, when changing a gradient of the reference signal and an input capacity to execute a gain control on the comparator.

Abstract: Provided is an image sensor including: a pixel section configured to include a plurality of pixels arranged therein; and an AD conversion unit configured to perform analog-to-digital (AD) conversion on a pixel signal on the basis of a result of comparison between a first voltage of a signal, which is obtained by adding, via capacitances, the pixel signal of the pixel and a reference signal that linearly changes in a direction opposite to the pixel signal, with a second voltage serving as a reference.

Abstract: It is an object of the present technology to provide an image sensor capable of reducing crosstalk in an AD conversion unit. The image sensor includes: capacitors in an even-numbered column region; and a capacitor in an odd-numbered column region disposed facing the capacitors in the even-numbered column region with different areas.