Abstract: The present invention provides a novel method of producing the 12-membered ring macrolide compound 11107D having an antitumor activity by biological transformation. Starting material which is the 12-membered ring macrolide compound 11107B represented by the formula (I) is incubated in the presence of a strain belonging to the genus Mortierella, the genus Streptomyces or the family Micromonosporaceae (for example, Streptomyces sp. AB-1704 strain (FERM BP-8551)), each of which has the ability of transforming the 12-membered ring macrolide compound 11107B into a 11107D substance represented by the formula (II), or a preparation of its cultured mycelia and oxygen, and then 11107D substance which is a target material is collected from the treating solution.

Abstract: A carrier for electrophotographic developer comprises a resin carrier core comprising a binder resin and magnetic powder dispersed in the binder resin, and a coating layer comprising a coating resin on a surface of the core, the binder resin being a silicone resin obtained by curing of a polysiloxane compound (A) having an epoxy group and a polysiloxane compound (B) having a group capable of reacting with the epoxy group, due to a ring-opening addition reaction; the binder resin containing a functional group which is an epoxy group and/or a group capable of reacting with an epoxy group; the coating resin containing a functional group capable of reacting with the functional group of the binder resin; the functional group of the coating resin and the functional group of the binder resin forming a chemical bond.

Abstract: The present invention provides a novel bioactive substance having an antitumor activity and a process for producing it, and a medical use thereof. Namely, it provides a 12-membered ring macrolide compound represented by the following formula obtained from the incubation solution of Streptomyces sp. Mer. 11107 or a variant thereof, a pharmacologically acceptable salt thereof or a hydrate of them, and a process for producing it.

Abstract: The present invention provides a novel bioactive substance having an antitumor activity and a process for producing it, and a medical use thereof. Namely, it provides a 12-membered ring macrolide compound represented by the following formula obtained from the incubation solution of Streptomyces sp. Mer.

Abstract: A semiconductor device includes a p?-silicon substrate, n?-epitaxial growth layers on the p?-silicon substrate, a field insulating film at the surface of the n?-epitaxial growth layer, an npn transistor formed at the n?-epitaxial growth layer, an pnp transistor formed at the n?-epitaxial growth layer, a DMOS transistor on the n?-epitaxial growth layer, and a resistance. The DMOS transistor includes an n+-diffusion layer forming a source, a p-type diffusion layer forming a back gate region, a lightly doped n-type diffusion layer forming a drain, and a heavily doped n+-diffusion layer forming the drain.

Abstract: The present invention relates to a compound represented by the formula (I): (wherein, R3, R6, R7 and R21 are the same as or different from one another and each represents a hydroxyl group etc.), a pharmacologically acceptable salt thereof or a hydrate of them. The compound (I) of the present invention suppresses angiogenesis, in particular, suppresses VEGF production in a hypoxic condition and is useful as a therapeutic agent for treating solid cancer.

Abstract: Steel tubes for bearing element parts according to the present invention, wherein the specific compositions are limited and an accumulation intensity of {211} face along with an impact property at ambient temperature in the longitudinal direction of steel tube are specified, can be provided as a source material for bearing element parts, which have excellent machinability and fatigue life in rolling contact, being incorporated without adding a free-cutting element specifically nor without reducing productivity since the spheroidizing for the same annealing duration with that of conventional spheroidizing treatment can be applied. Accordingly, by applying a manufacturing method or a cutting-machining method according to the present invention, bearing element parts such as races, rollers and shafts can be produced with less cost and efficiently.

Abstract: A gas sensor is constructed as follows. A protector (4) covering around a gas sensing element (2) has an inner hollow-cylindrical portion (6) and an outer hollow-cylindrical portion (7) that is provided coaxially with the inner hollow-cylindrical portion (6) with an air space (8) in between. Outer-wall gas inlet openings (13) are formed in the outer hollow-cylindrical portion (7), and guiding bodies (10) extending inward are attached to the outer-wall gas inlet openings (13). Inner-wall gas inlet openings (11) are formed in the inner hollow-cylindrical portion (6) at positions nearer to the gas sensing element (2) than the outer-wall gas inlet openings (13). A side wall (9) face of the inner hollow-cylindrical portion (6) opposite the outer-wall gas inlet openings (13) is formed so as to be parallel to a side wall (12) of the outer-hollow cylindrical portion (7) or so as to have a slop-like shape with a diameter enlarging in the axial direction toward a bottom wall (17) of the protector (4).

Abstract: Compounds represented by the following general formula (I), pharmacologically acceptable salts thereof or hydrates of the same: (I) wherein W represents and R3, R7, R16, R17, R20, R21 and R21? are the same or different and each represents hydrogen, etc. Because of inhibiting angiogenesis and inhibiting the production of VEGF particularly in hypoxia, the compounds (I) are useful as remedies for solid cancer.

Abstract: Cold finished seamless steel tubes are made such that the residual stress F to be generated at the stage of the correction process after cold working is controlled to be 30 MPa or more and the scattering thereof is 30 MPa or less, when measured by Crampton method. Further, by adjusting the average grain size of spheroidized carbides, the dimensional change which emerges in lathe turning of the outside and inside diameter of relevant steel tubes due to the residual strain can be suppressed, and the strict roundness as well as the excellent machinability can be secured at the final processing stage of the work pieces for bearing parts. Consequently, steel tubes with high dimensional accuracy and less dimensional change at the final steps such as lathe turning, heat treatment and the like, can be made for use as bearing parts.

Abstract: A semiconductor device includes a p−-silicon substrate, n−-epitaxial growth layers on the p−-silicon substrate, a field insulating film at the surface of the n−-epitaxial growth layer, an npn transistor formed at the n−-epitaxial growth layer, an pnp transistor formed at the n−-epitaxial growth layer, a DMOS transistor on the n−-epitaxial growth layer, and a resistance. The DMOS transistor includes an n+-diffusion layer forming a source, a p-type diffusion layer forming a back gate region, a lightly doped n-type diffusion layer forming a drain, and a heavily doped n+-diffusion layer forming the drain.

Abstract: Provided are a carrier for electrophotography developers prepared with generating a slight amount of byproducts such as water, alcohol, etc, which carrier is free from release of a magnetic powder, has excellent mechanical strength and durability, and good environmental stability, and further can restrain occurrence of toner spent condition and has favorable fluidity and excellent capability of imparting charging to a toner, a two-component developer comprising the carrier and a method for forming an image using the developer.

Abstract: An N− type epitaxial layer is formed on a P− type silicon substrate. Trenches are created so as to penetrate N− type epitaxial layer and so as to reach to a predetermined depth of P− type silicon substrate. Thermal oxide films are formed on the sidewalls of trenches. Buried polysilicon films are formed so as to fill in trenches. Thermal oxide films are formed having an approximately constant film thickness ranging from the bottoms to the edges of the openings of trenches so as not to give stress to N− type epitaxial layers. Thereby, a semiconductor device wherein a leak current is prevented can be gained.

Abstract: There is provided a disk device capable of shortening a replacing time for a disk.

Abstract: There is provided a disk device wherein an insertion/ejection slot for a disk, and two upper and lower disk D transferring paths connected to the insertion/ejection slot are provided; between the upper transferring path and the lower transferring path, a transferring roller for transferring the disk is disposed; an upper roller portion and a lower roller portion of the transferring roller are disposed so as to face the upper and lower transferring paths, respectively; in the upper roller portion and the lower roller portion, there are provided pressing members, having pressing surfaces to be arranged so as to oppose to each other; and the disk is caught between the pressing surface and the upper roller portion, or between the pressing surface and the lower roller portion to rotate the transferring roller thereby transferring the disk.

Abstract: An electroconductive resin composition which exhibits excellent moldability and electric conductivity, and is produced at low costs. The electroconductive resin composition contains a zinc-based metal powder, low melting metal which melts upon molding, and thermoplastic resin. The zinc-based metal powder having a large surface area captures the molten low melting metal to prevent the phase separation thereof from both the resin and zinc-based metal powder. The zinc-based metal powder has a round configuration, as compared to that of fiber so as not to damage the fluidity of the resin greatly. Thus, the resultant electroconductive resin composition is excellent in moldability, and can be produced at low costs.

Abstract: An N− type epitaxial layer is formed on a P− type silicon substrate. Trenches are created so as to penetrate N− type epitaxial layer and so as to reach to a predetermined depth of P− type silicon substrate. Thermal oxide films are formed on the sidewalls of trenches. Buried polysilicon films are formed so as to fill in trenches. Thermal oxide films are formed having an approximately constant film thickness ranging from the bottoms to the edges of the openings of trenches so as not to give stress to N− type epitaxial layers. Thereby, a semiconductor device wherein a leak current is prevented can be gained.

Abstract: Provided is a process for producing an isocoumarin-3-yl-acetic acid derivative, characterized by reacting a homophthalic acid derivative represented by a formula: (wherein Rc, R2 and R are mainly protecting groups) with a malonic acid derivating represented by a formula: (wherein R is an organic group including a lower alkyl group; R3 is a protecting group for a carboxyl group; and X is a halogen atom or a —OM group (wherein M is alkaline metal or alkaline earth metal)). According to the above process, various isocoumarin-3-yl-acetic acid derivatives can efficiently be provided.

Abstract: A signaling virtual channel (SVC) is established only when it is necessary so that a bandwidth reserved for a signaling channel for transmitting signaling information is usable for transmitting communication information. The SVC is established between a subscriber terminal and an asynchronous transfer mode (ATM) exchange system by selecting the virtual path identifier (VPI) and the virtual channel identifier (VCI) for signaling only when a request for a call connection is made by the subscriber terminal or only when a notification of reception of a call is sent to the subscriber terminal. A communication path between the subscriber terminal and the ATM exchange system is established for transmitting communication information by transmitting communication call setting information through the SVC. The SVC is released after an establishing operation of the communication path is completed.

Abstract: A semiconductor device allowing reduction in area occupied by a bipolar transistor as well as a method of manufacturing the same are obtained. The semiconductor device includes a substrate, first conductivity type regions, a collector region, base regions and emitter regions. The first conductivity type region is formed on the substrate, and has a main surface. The collector region is formed in the first conductivity type region. The base region is located in the first conductivity type region and on the collector region. The emitter region is located in the first conductivity type region and on the base region. The first conductivity type region is provided with grooves extending to the collector region, and isolation grooves disposed around a vertical bipolar transistor. The grooves are filled with conductors of the second conductivity type. The isolation grooves are filled with isolation conductors of the second conductivity type.