Patents by Inventor Takashi Narushima

Takashi Narushima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for manufacturing P-type semiconductor material
    Patent number: 8212260
    Abstract: To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1×1018 to 5×1020 cm?3 of Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: July 3, 2012
    Assignee: Hoya Corporation
    Inventors: Masahiro Orita, Takashi Narushima, Hiroaki Yanagida
  • METAL NANOPARTICLE AND METHOD FOR PRODUCING THE SAME
    Publication number: 20100273000
    Abstract: A metal nanoparticle including, a core portion which includes at least one metal element, and organic compounds which adsorb onto the surface of the core portion. The organic compounds have a hydrophilic portion and a hydrophobic portion within their molecules. The hydrophilic portion is forming a coordinate bond with the surface of the core portion through O atoms.
    Type: Application
    Filed: October 16, 2008
    Publication date: October 28, 2010
    Applicant: HOYA CORPORATION
    Inventors: Shuzo Tokumitsu, Takashi Narushima
  • P-TYPE SEMICONDUCTOR MATERIAL, SEMICONDUCTOR DEVICE, ORGANIC ELECTROLUMINESCENT DEVICE, AND METHOD FOR MANUFACTURING P-TYPE SEMICONDUCTOR MATERIAL
    Publication number: 20100078626
    Abstract: To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1×1018 to 5×1020 cm?3 of Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.
    Type: Application
    Filed: September 28, 2007
    Publication date: April 1, 2010
    Applicant: Hoya Corporation
    Inventors: Masahiro Orita, Takashi Narushima, Hiroaki Yanagida