Abstract: A laser processing apparatus for processing a multitude of portions to be processed in an area to be processed in a subject W to be processed, including a laser device, a focusing or imaging device for laser beams provided by the laser device, and an arranging device for arranging the subject W to be processed, in which the subject W to be processed and the focusing or imaging device are fixed, and the subject to be processed is processed while relatively shifting the laser beams and the focusing or imaging device so that the focusing or imaging device is irradiated from different areas in the laser beam, inside and outside the area to be processed, and that cumulative laser beam irradiation time during the processing of each of the multitude of portions to be processed is equalized.

Abstract: A semiconductor device manufacturing method and a semiconductor device manufacturing system for irradiating a first laser light (50) and a second laser light (52) with a wavelength different from that of the first laser light to a substrate (46) to perform a thermal processing on the substrate are provided. In the step for performing the thermal processing, at least one of an irradiation intensity and an irradiation time of a first laser and a second laser is controlled to control a temperature distribution in the substrate or a film on the substrate in a depth direction.

Abstract: A semiconductor device manufacturing method and a semiconductor device manufacturing system for irradiating a first laser light (50) and a second laser light (52) with a wavelength different from that of the first laser light to a substrate (46) to perform a thermal processing on the substrate are provided. In the step for performing the thermal processing, at least one of an irradiation intensity and an irradiation time of a first laser and a second laser is controlled to control a temperature distribution in the substrate or a film on the substrate in a depth direction.

Abstract: A laser processing apparatus for processing a multitude of portions to be processed in an area to be processed in a subject W to be processed, including a laser device, a focusing or imaging means for laser beams provided by the laser device, and an arranging means for arranging the subject W to be processed, in which the subject W to be processed and the focusing or imaging means are fixed, and the subject to be processed is processed while relatively shifting the laser beams and the focusing or imaging means so that the focusing or imaging means is irradiated from different areas in the laser beam, inside and outside the area to be processed, and that cumulative laser beam irradiation time during the processing of each of the multitude of portions to be processed is equalized.

Abstract: When laser ablation is implemented with respect to a target comprising silicon in an atmosphere containing oxygen, Si constituting the target is ejected from the laser irradiated portion thereof. The ejected Si collides with oxygen, which is the atmosphere gas, and reacts therewith in a gas phase forming clusters composed of SiO2 or SiOx, or silicon (Si) and oxygen, and containing pores with a size of several nanometers. The clusters adhere to the substrate, thereby forming a porous film composed of Si and oxygen and containing pores on the substrate. Furthermore, an insulating film for a semiconductor element is formed to have a multilayer structure in which an aggregate is deposited on the substrate and then a dense film is formed. When the insulating film is formed, the aggregate is produced by implementing laser ablation under a pressure of 1 Kpa, for example.

Abstract: When it is determined that a pulse width of high harmonic light Lb to jitter of discharge light Ld is not appropriate as a result of comparison between a waveform of the discharge light Ld and that of the high harmonic light Lb, a main controller judges that the jitter of the discharge light Ld in a gas laser device is large, and controls to move a translating stage to extend a cavity length so to increase a pulse width of fundamental harmonic light La which is laser-oscillated by an oscillator. When the main controller determines that a light intensity of the high harmonic light Lb has a value smaller than a predetermined value and is not normal, it controls to move the translating stage to shorten the cavity length so to enhance the light intensity of seed light La to be laser-oscillated by the oscillator. Thus, the light intensity and pulse width of the seed light at injection locking are optimized.

Abstract: A thin-film EL element which does not permit the color of the emitted light to change irrespective of a change in the voltage, which remains chemically stable and which emits light of high brightness even on a low voltage. The element comprises two or more polycrystalline thin light emitting layers (4, 5, 6) and one or more thin insulating layers (3, 7). The interface between a thin film and a thin film constituting a light emitting layer is formed by epitaxial growth, and the electrical characteristics of the element are equivalent to those of a single circuit which includes two Zener diodes (12, 13) connected in series, a capacitor (14) connected in parallel with the serially connected Zener diodes, and a capacitor (15) connected to one end of the capacitor (14).

Abstract: A thin-film EL element which does not permit the color of the emitted light to change irrespective of a change in the voltage, which remains chemically stable and which emits light of high brightness even on a low voltage. The element comprises two or more polycrystalline thin light emitting layers (4, 5, 6) and one or more thin insulating layers (3, 7). The interface between a thin film and a thin film constituting a light emitting layer is formed by epitaxial growth, and the electrical characteristics of the element are equivalent to those of a single circuit which includes two Zener diodes (12, 13) connected in series, a capacitor (14) connected in parallel with the serially connected Zener diodes, and a capacitor (15) connected to one end of the capacitor (14).

Abstract: A thin sulfide film can be formed by simultaneously generating under different conditions a plurality of deposition materials to be deposited on a substrate, using the fact that sulfur has a higher vapor pressure. Sulfur vapors can be generated in an external vessel (6) which is located outside the vacuum deposition vessel (1). The sulfur vapors can then be introduced into the vacuum deposition vessel (1) through a vapor inlet tube (7) to form a localized atmosphere of sulfur vapors within the vacuum deposition vessel (1) in the vicinity of the substrate which is positioned on a substrate holder (4). Chemical bonding, on the substrate, of the sulfur vapors and the vapors of other deposition materials generated from other deposition sources provided in the vacuum deposition vessel (1) form a thin film of high quality with good reproducibility.

Abstract: A thin sulfide film can be formed by simultaneously generating under different conditions a plurality of deposition materials to be deposited on a substrate, using the fact that sulfur has a higher vapor pressure. Sulfur vapors can be generated in an external vessel (6) which is located outside the vacuum deposition vessel (1). The sulfur vapors can then be introduced into the vacuum deposition vessel (1) through a vapor inlet tube (7) to form a localized atmosphere of sulfur vapors within the vacuum deposition vessel (1) in the vicinity of the substrate which is positioned on a substrate holder (4). Chemical bonding, on the substrate, of the sulfur vapors and the vapors of other deposition materials generated from other deposition sources provided in the vacuum deposition vessel (1) form a thin film of high quality with good reproducibility.

Abstract: A thin film EL element capable of emitting light of different colors desired even at a low applied voltage owing to its high luminescent efficiency and freedom from crystal defects. The thin film EL element is of the dual dielectric structure having a transparent substrate (1), and a transparent conducting film (2), a first dielectric layer (3), a luminescent layer (4), and a second dielectric layer (5), which are formed on top of the other on the substrate, the transparent conducting film and the second dielectric layer being provided with respective electrodes (6a, 6b). It is characterized in that the luminescent layer has a superlattice structure represented by (luminscent host material)/(luminescent host material):(luminescent center impurity). The luminescent layer permits the doping of various luminscent center impurities while keeping its electrical neutrality without a need for the addition of charge compensating elements.

Abstract: In order to provide a thin oxysulfide film excellent in crystallinity and suitable for use as a luminescent layer of a thin film EL device and a thin fluorescent film for a CRT, a metal element is evaporated from an evaporation source provided in a chamber in which a sulfur gas and an oxygen gas have been introduced to combine those substances chemically on a substrate provided in the chamber to form a thin oxysulfide film on a surface of the substrate.

Abstract: In the present invention, an EL element section (1) includes a plurality of arranged cells, each including a thin film EL element formed so as to emit white light, and a like number of predetermined-color filters (2) formed on the surface of the EL element section and corresponding to the cells such that each cell is caused to emit light in accordance with image information and the emitted light is output through the corresponding color filter to color display purposes. Thus, a very thin color display apparatus is provided in which contrast is good and the dependency of the luminance on the visual sensation is also good. The thin film EL element according to the present invention uses a luminous layer of zinc sulphide containing nitrogen, so that transitional luminescence occurs among a plurality of levels, and hence rays of light having various wavelengths are emitted to thereby provide white light containing three primary colors.

Abstract: A method of fabricating a thin-film EL device comprising the steps of sequentially forming and stacking a first electrically conductive layer of first electrodes, a first insulating layer, a luminous layer, a second insulating layer and a second electrically conductive layer of second electrodes; previously forming a pattern of the first conductive layer all over a zone for formation of the first electrodes and a zone for formation of electrode terminals; and immersing it into a plating solution to selectively form a terminal pattern only on the first conductive layer, whereby the need for pattern aligning operation can be eliminated, only immersion of it into the plating solution enables easy formation of the precise terminal pattern without providing any damage to the elements of the EL device, and the obtained device can maintain its stable characteristics for a long period of time.

Abstract: The disclosure describes a thin film EL device including a luminescent layer made of column polycrystals formed by independently evaporating luminescent host material and an activator and then combining the evaporated substances on a substrate. Electrons in the luminescent layer which are accelerated by an electric field applied from the outside efficiently collide against the activator without being intercepted by interfaces between crystalline particles. The thin film EL device of the present invention can be used for display, illumination, writing, reading out, and erasure of signals of photorecording mediums.

Abstract: A thin-film EL device of which the surface is coated with a protective film of a two-layer structure consisting of an insulating film (10) and a metallic film (20) in order to obtain good air-tightness and high reliability. The insulating film (10) consists of any one of a silicon oxide film, a silicon nitride film, an aluminum oxide film or a tantalum oxide film, and the metallic film consists of a thin film of either aluminum or tantalum.

Abstract: The disclosure describes a thin film EL device including a luminescent layer made of column polycrystals formed by independently evaporating luminescent host material and an activator and then combining the evaporated substances on a substrate. Electrons in the luminescent layer which are accelerated by an electric field applied from the outside efficiently collide against the activator without being intercepted by interfaces between crystalline particles. The thin film EL device of the present invention can be used for display, illumination, writing, reading out, and erasure of signals of photo-recording mediums.

Abstract: The thin film EL device includes a luminescent layer made of column polycrystals formed by independently evaporating luminescent host material and an activator and then combining evaporated substances on a substrate.Electrons in the luminescent layer are accelerated by electric field applied from outside efficiently collide against the activator without being intercepted by interfaces between crystalline particles. The thin film EL device can be used for display, illumination, writing, reading out and erasure of signals of photo- recording medium.