Abstract: A process for producing a micro Fresnel lens comprising the following steps: applying a photoresist coat to a smooth-surfaced substrate such as a glass, plastic or metal plate; exposing the resist cost to actinic radiation such as an electron beam, laser beam or UV rays; developing the exposed coat to form a resist pattern duplicating concentric rings for the desired micro Fresnel lens; forming an electrode element on the resist pattern by depositing a conductive metal such as silver or nickel by sputtering or evaporation; forming a nickel layer on the conductive metal electrode element by depositing metallic nickel or a nickel compound through electroforming wherein the pattern of the concentric rings is transferred onto the nickel layer with the conductive metal being used as an electrode; forming a nickel stamper by peeling the nickel layer from both the electrode and the substrate; and forming a micro Fresnel lens on the nickel stamper by either the photopolymerization or injection method of duplication.

Abstract: A process for producing a micro Fresnel lens comprises the following steps: moving either a substrate coated with a resist layer for providing the micro Fresnel lens or a source of actinic radiation such as electron beam for exposing the resist layer relative to each other in a fixed direction; scanning linearly the resist coat with the actinic radiation in a direction perpendicular to the direction of the relative movement; during the scanning operation, performing exposure to the actinic radiation or interrupting or overlapping the application of the actinic radiation so as to form a latent image in an area corresponding to the grooved surface of the micro Fresnel lens within a predetermined width; repeating the above procedures in a direction perpendicular to that of the relative movement of the substrate and the source of actinic radiation; and developing the exposed resist layer to provide a micro Fresnel lens having the desired grooved surface.

Abstract: A method of fabricating an integrated semiconductor circuit device having a plurality of layers of circuit patterns, comprising forming the circuit pattern of at least one of the above mentioned layers by a direct exposure method using an electron beam, and forming the circuit pattern of at least one of the remaining layers by a light exposure method using a photomask.