Patents by Inventor Takashi O

Takashi O has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7247888
    Abstract: There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner rim of the ring main body being formed higher than its outside portion.
    Type: Grant
    Filed: February 28, 2005
    Date of Patent: July 24, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hirotaka Ogihara, Yukio Nishiyama, Akio Ui, Takashi O
  • Publication number: 20050191811
    Abstract: There is here disclosed a film forming ring comprising a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner rim of the ring main body being formed higher than its outside portion.
    Type: Application
    Filed: February 28, 2005
    Publication date: September 1, 2005
    Inventors: Hirotaka Ogihara, Yukio Nishiyama, Akio Ui, Takashi O
  • Patent number: 6368977
    Abstract: There is provided a semiconductor device manufacturing method that comprises a first step of loading a processed substrate in a reaction chamber, a second step of introducing a reaction gas into the reaction chamber at a predetermined flow rate, a third step of maintaining an interior of the reaction chamber at a predetermined pressure, a fourth step of starting generation of plasma by supplying a high frequency power to an electrode arranged in the reaction chamber, a fifth step of applying a predetermined process to the processed substrate, and a sixth step of stopping generation of the plasma by stopping supply of the high frequency power after the predetermined process is completed, wherein the reaction gas is introduced continuously when the generation of the plasma is stopped.
    Type: Grant
    Filed: June 29, 2000
    Date of Patent: April 9, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaki Narita, Yukimasa Yoshida, Katsuaki Aoki, Hiroshi Fujita, Takashi O, Toshimitsu Omine, Isao Matsui, Osamu Yamazaki, Naruhiko Kaji
  • Patent number: 6333246
    Abstract: A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.
    Type: Grant
    Filed: June 28, 2000
    Date of Patent: December 25, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaki Narita, Yukimasa Yoshida, Katsuaki Aoki, Hiroshi Fujita, Osamu Yamazaki, Toshimitsu Omine, Isao Matsui, Takashi O
  • Patent number: 5050788
    Abstract: A dispensing carton containing film wound cylindrically includes an adhesive retaining device which retains the leading edge of the film left after the film pulled out from a carton box has been cut by a cutter. The retaining device includes a base member, a sticking layer mounted on one surface of the base member to fix the base member on the surface of the front panel and an adhesive layer mounted on the other surface of the base member. The adhesive layer is formed of grafted copolymer obtained by graft-polymerizing vinyl chloride monomer with copolymer of ethylene and vinylacetate. Preferably, the adhesive layer is formed of grafted copolymer obtained by graft-polymerizing vinyl chloride monomer having weight ratio of 80-20 with copolymer of ethylene and vinylacetate having weight ratio of 20-80 in which the weight ratio of ethylene and vinylacetate is 20-70 to 80-30.
    Type: Grant
    Filed: February 16, 1990
    Date of Patent: September 24, 1991
    Assignee: Kureha Chemical Industry Company, Limited
    Inventors: Takashi O. Taguchi, Akio Ouchi, Mitsunobu Uchida