Abstract: High quality titanium ingot is produced by using recovered titanium scrap as a raw material and adding additives. Scrap, each having individual information of identification and process profile information, is passed through automatic reading means to obtain the information and to store it in a data server.

Abstract: The present invention provides a titanium material for hot rolling which enables reduction of defects on the surface (in the case of a flat material or strip coil, including not only the flat surfaces but also the side surfaces and edges) due to hot rolling. The titanium material for hot rolling has dimples imparted by cold plastic deformation whose mean value of the heights (Wc) of the undulation profile elements is 0.2 to 1.5 mm and mean value of the lengths (WSm) thereof is 3 to 15 mm. The invention also provides a method of producing the titanium material and a method of hot rolling the titanium material.

Abstract: Provided is an imprint product, which is for transcribing a fine pattern of a mold surface and which contains a fluorine-containing cyclic olefin polymer containing repeating unit represented by formula (1) and having a fluorine atom content rate of 40% to 75% by mass.

Abstract: A printer driver for holding the setting of various parameters for a printer and effecting conversion of print data from an application, the printer driver includes: a specific character string detecting unit which detects from the print data a specific character string designated by a user; a code converting unit which converts the specific character string detected by the specific character string detecting unit to a code; and a code imparting unit which imparts the code converted by the code converting unit to the print data.

Abstract: In production of a reactive metal using a melting furnace for producing metal having a hearth, ingots can be efficiently produced by efficiently cooling the ingots extracted from the mold provided in the melting furnace. In addition, an apparatus structure in which multiple ingots can be produced with high efficiency and high quality from one hearth, is provided. A melting furnace for producing metal is provided, the furnace has a hearth for having molten metal formed by melting raw material, a mold in which the molten metal is poured, an extracting jig which is provided below the mold for extracting ingot cooled and solidified downwardly, a cooling member for cooling the ingot extracted downwardly of the mold, and an outer case for keeping the hearth, the mold, the extracting jig, and the cooling member separated from the air, wherein at least one mold and extracting jig are provided in the outer case, and the cooling member is provided between the outer case and the ingot, or between the multiple ingots.

Abstract: A method for producing a semiconductor device, including a semiconductor chip, for improving production efficiency and the flexibility of production design is provided.

Abstract: Provided are a microneedle and a microneedle array which have both aspects of safety and easiness to use and can administer a predetermined dose of a medical agent without causing a pain by smoothly running into the skin surface layer of a patient, the microneedle comprising a frustum and a forward end portion thereon, having a forward end apex angle in the range of 15 to 60° and a forward end diameter in the range of 1 to 20 ?m and satisfying the following expression (1), H/D?5??(1) (H: Height of the whole, D: Diameter of bottom surface of the frustum).

Abstract: A method for producing a semiconductor device, including a semiconductor chip, for improving production efficiency and the flexibility of production design is provided.

Abstract: A multi-layer structure including a base insulating layer and a thin metal film layer (seed layer) is prepared. A plating resist layer is formed to have a prescribed pattern on the upper surface of the thin metal film layer. A metal plating layer is formed on the thin metal film layer exposed by electroplating. Then, the plating resist layer is removed, and the thin metal film layer in the region having the plating resist layer is removed. In this way, a conductive pattern including the thin metal film layer and the metal plating layer is formed. The upper surface of the base insulating layer in the region without the conductive pattern is subjected to roughening treatment. A cover insulating layer is formed on the upper surfaces of the base insulating layer and the conductive pattern. In this way, a printed circuit board is completed.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes the steps of pasting a film for forming a protective layer in which a support base, an adhesive layer, and a thermosetting resin layer are laminated, in that order, onto a bumped wafer in which a low dielectric material layer is formed, with the thermosetting resin layer serving as a pasting surface, and further, peeling the support base and the adhesive layer from the thermosetting resin layer, forming a protective layer by thermally curing the thermosetting resin layer, and dicing the bumped wafer and the protective layer together.

Abstract: Provided is a method of manufacturing a semiconductor device wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The method of manufacturing a semiconductor device of the present invention includes preparing a semiconductor wafer with a plurality of members for connection formed on both first and second surfaces; preparing a laminated film including a dicing sheet with a pressure-sensitive adhesive layer laminated on a base material, and a curable film that is laminated on the pressure-sensitive adhesive layer and has a thickness equivalent to or more than the height of the member for connection on the first surface; pasting the curable film of the laminated film to the semiconductor wafer while facing the curable film to the first surface so that the members for connection are not exposed to the pressure-sensitive adhesive layer; and dicing the semiconductor wafer to form a semiconductor element.

Abstract: It is an object of the present invention to provide a load leveling system of a power system capable of attaining load leveling in a distribution substation unit and a method thereof. Disclosed is a load leveling system of a power system with a controller having a major customer and lower transforming apparatus, and with a customer connected to the lower transforming apparatus via a low-voltage line. The system also has a communication unit between the customer and its own system, and control use time zones of devices within the customer; an electric demand prediction unit, and a first load leveling processing unit. By employing such an arranged system, it becomes possible to provide a load leveling system of a power system capable of realizing load leveling of both a distribution substation unit and a pole transformer unit.

Abstract: Disclosed is an optical material including a cyclic olefin copolymer containing at least a repeating structural unit [A] represented by the general formula (1) and a repeating structural unit [B] represented by the general formula (2) and having a molar ratio [A]/[B] of from 95/5 to 1/99, wherein the absolute value of the ratio ?OB/?F is from 0.001 to 0.250 in which ?OB represents the amount of a change in the absolute value of the orientation birefringence calculated from the phase difference (nm) at a wavelength of 633 nm/film thickness (?m) in a stretched film obtained from the optical material, and ?F represents the amount of a change in the absolute value of the orientation coefficient determined from the dichroic ratio of parallel light intensity I? to perpendicular light intensity I?, each relative to the orientation direction according to Raman spectroscopy.

Abstract: Provided is a laminated film wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The laminated film of the present invention is a laminated film for filling the space between semiconductor elements that are electrically connected through a member or connection, the film including a dicing sheet in which a pressure-sensitive adhesive layer is laminated on a base material and a curable film that is laminated on the pressure-sensitive adhesive layer, wherein the curable film has a lowest melt viscosity at 50 to 200° C. of 1×102 Pa·s or more and 1×104 Pa·s or less.

Abstract: Provided is a method of manufacturing a semiconductor device wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The method of manufacturing a semiconductor device of the present invention includes preparing a semiconductor wafer with a plurality of members for connection formed on both first and second surfaces; preparing a laminated film including a dicing sheet with a pressure-sensitive adhesive layer laminated on a base material, and a curable film that is laminated on the pressure-sensitive adhesive layer and has a thickness equivalent to or more than the height of the member for connection on the first surface; pasting the curable film of the laminated film to the semiconductor wafer while facing the curable film to the first surface so that the members for connection are not exposed to the pressure-sensitive adhesive layer; and dicing the semiconductor wafer to form a semiconductor element.

Abstract: An alumina particle composite (1) includes an alumina particle (2) and an organic acid (3) chemically bonded to a surface of the alumina particle (2). Further, the alumina particle (2) has a short axis length of 1 to 10 nm, a long axis length of 20 to 400 nm, and an aspect ratio of 5 to 80, and is represented by Formula I, Al2O3.nH2O??Formula I where n is 0 or more.

Abstract: Provided is a method of producing a semiconductor device having a structure wherein a semiconductor chip 3 is mounted on a wiring circuit substrate 2 and sealed with a resin. A wiring circuit substrate 2 having a connecting conductor portion that can be connected to an electrode of the chip is formed on a metal support layer 1 in a way such that the substrate can be separated from the metal support layer, the chip 3 is mounted on the wiring circuit substrate 2, a sheet-shaped resin composition T is placed on the chip and heated on the chip to seal the chip, and the metal support layer is separated and divided to obtain individual semiconductor devices.

Abstract: A computer readable recording medium storing a program causing a computer to execute a process for a combination printing function for collectively printing out contents of plural pages into one page, the process which includes selecting a test printing target page from printing target data, generating image data in which at least two pages regarding the selected page are reduced to different scales and are collected into one page, and transmitting the generated image data to a printing device.

Abstract: The LED mounting substrate of the present invention includes a thermally conductive layer (thermally conductive sheet (10)) made of a composition containing boron nitride powder and a fluororesin, and the fluororesin contains polytetrafluoroethylene. The thermally conductive layer has a thermal conductivity of 2 W/(m·K) or more. The thermally conductive layer has a reflectance of 0.80 or more at wavelengths of 380 nm, 470 nm, and 650 nm.

Abstract: This invention seeks to provide an extrusion-molded product formed from a resin composition that contains an aromatic polycarbonate resin and is excellent in transparency, appearance and flame retardancy. This invention is an extrusion-molded product formed from a resin composition comprising 100 parts by weight of an aromatic polycarbonate resin having a branched structure and a branching ratio of 0.7 to 1.5 mol % (component A) and 0.005 to 5 parts by weight of a flame retardant.