Abstract: An object of the disclosure is to provide a chip resistor without causing the disconnection in atmosphere of sulfidizing gas and without precipitating silver sulfide on its surface. The chip resistor of the present disclosure includes a resistor layer disposed on a top surface of a substrate; a first upper electrode layer disposed at both sides of the resistor layer and being electrically connected to the resistor layer; and a second upper electrode layer disposed on the first upper electrode layer and including between 75% by weight and 85% by weight (inclusive) of silver particles with an average particle diameter ranging from 0.3 um to 2 um, between 1% by weight and 10% by weight (inclusive) of carbon, and a resin.

Abstract: A lamp includes: first and second semiconductor light-emitting elements adapted to emit excitation light; a wavelength conversion element adapted to convert the excitation light into light having a peak wavelength different from that of the excitation light; and a concave mirror adapted to reflect the excitation light emitted from the semiconductor light-emitting elements to the wavelength conversion element and reflect the light from the wavelength conversion element toward an outside of the lamp. A distance y1 from an optical axis of the first semiconductor light-emitting element to an optical axis of the concave mirror satisfies (D+Dphos)/2?y1?4f, and a distance y2 from an optical axis of the second semiconductor light-emitting element to the optical axis of the concave mirror satisfies 4f<y2?R.

Abstract: A light source device is provided. The light source device comprises a semiconductor light-emitting element; and a wavelength conversion member for converting a wavelength of a light emitted from the semiconductor light-emitting element. The semiconductor light-emitting element has a light-emitting peak wavelength of not less than 380 nanometers and not more than 420 nanometers. The light emitted from the semiconductor light-emitting element has a light energy density of not less than 0.2 kW/cm2. The wavelength conversion member contains at least one fluorescent substance selected from the group consisting of a (Sr1-x,Bax)3MgSi2O8:Eu2+ (0?x?1) fluorescent substance, a (Y1-y,Gdy)3(Al1-z,Gaz)5O12:Ce3+ (0?y?1, 0?z?1) fluorescent substance, and an Eu3+-activated fluorescent substance. The light source device has a high output and a high light-emitting efficiency.

Abstract: The present invention provides a wavelength conversion board comprising a substrate; one or more fluorescence members each containing a fluorescence substance for converting excitation light into fluorescence, the fluorescence member being disposed on or above the substrate; and a flexible gel disposed around the fluorescence member. The present invention also provides a wavelength conversion board comprising a substrate; a fluorescence member containing fluorescence substance for converting excitation light into fluorescence, the fluorescence member being disposed on or above the substrate; a fluent material disposed around the fluorescence member; a light-transmissive plate parallel to the substrate; and a sealing member disposed around the fluent material in a cross section of the wavelength conversion board. The fluorescence member is interposed between the light-transmissive plate and the substrate in the cross section of the wavelength conversion board.

Abstract: A light source device is provided. The light source device comprises a semiconductor light-emitting element; and a wavelength conversion member for converting a wavelength of a light emitted from the semiconductor light-emitting element. The semiconductor light-emitting element has a light-emitting peak wavelength of not less than 380 nanometers and not more than 420 nanometers. The light emitted from the semiconductor light-emitting element has a light energy density of not less than 0.2 kW/cm2. The wavelength conversion member contains at least one fluorescent substance selected from the group consisting of a (Sr1-x,Bax)3MgSi2O8:Eu2+ (0?x?1) fluorescent substance, a (Y1-y,Gdy)3(Al1-z,Gaz)5O12:Ce3+ (0?y<1, 0?z<1) fluorescent substance, and an Eu3+-activated fluorescent substance. The light source device has a high output and a high light-emitting efficiency.

Abstract: The present invention provides an oxynitride silicate fluorescent substance capable of output a light having a high luminance even when irradiated by an exciting light having a high energy density. The present invention is a yellow fluorescent substance represented by a chemical formula (Ba1-x-y-z,Srx)aSibOcNd:Eu2+y,Y3+z (0.9?a?1.1, 1.9?b?2.1, 1.9?c?2.1, 1.9?d?2.1, 0?x?1, 0<y<0.01, and 0?z<0.01).

Abstract: Provided is a high-efficiency light-emitting device. Further, provided is a light-emitting device with high efficiency and less variation in the color temperature of emitted white light in the case of configuring, for example, a white light-emitting device combining a blue LED and a phosphor layer. The light-emitting device includes a phosphor layer that emits light having a predetermined wavelength, and the phosphor layer contains at least one selected from the group consisting of a phosphor represented by a general formula: aYO3/2.(3?a)CeO3/2.bAlO3/2.cGaO3/2.fWO3 (2.80?a?2.99, 3.00?b?5.00, 0?c?2.00, 0.003?f?0.020, where 4.00?b+c?5.00), and a phosphor represented by a general formula: aYO3/2.(3?a)CeO3/2.bAlO3/2.cGaO3/2.gK2WO4 (2.80?a?2.99, 3.00?b?5.00, 0?c?2.00, 0.003?g?0.015, where 4.00?b+c?5.00).

Abstract: The present disclosure provides a (Ba1?z,Srz)3MgSi2O8:Eu2+ based phosphor with high emission quantum efficiency. Specifically, the present disclosure provides a blue light emitting phosphor including: a (Ba1?z,Srz)3MgSi2O8 based crystal where z satisfies 0?z<1 and a (Ba1?z,Srz)MgSiO4 based crystal where z satisfies 0?z<1 as a host crystal; and Eu2+ as a luminescent center.

Abstract: An LED encapsulation resin body disclosed in the present application includes: a phosphor; a heat resistance material arranged on, or in the vicinity of, a surface of the phosphor; and a silicone resin in which the phosphor with the heat resistance material arranged thereon is dispersed.

Abstract: It is an object to provide phosphors with high luminance. It also is an object to provide phosphors with less decrease in luminance due to a reduction in particle diameter. A first phosphor is represented by a general formula: aYO3/2.(3?a)CeO3/2.bAlO3/2.cGaO32.fWO3(2.80?a?2.99, 3.00?b?5.00, 0?c?2.00, 0.003?f?0.020, where 4.00?b+c?5.00). A second phosphor is represented by a general formula: aYO3/2.(3?a)CeO3/2.bAlO3/2.cGaO3/2.gK2WO4(2.80?a?2.99, 3.00?b?5.00, 0?c?2.00, 0.003?g?0.015, where 4.00?b+c?5.00).

Abstract: An LED device includes: a substrate; an LED element provided on the substrate; a cerium oxide-dispersed composition layer containing a silicone resin and cerium oxide in an amount of 0.005 parts by weight or more and 0.03 parts by weight or less with respect to 100 parts by weight of the silicone resin, for covering the LED element; and a sealing material containing no cerium oxide for covering the cerium oxide-dispersed composition layer.

Abstract: An object of the disclosure is to provide a chip resistor without causing the disconnection in atmosphere of sulfidizing gas and without precipitating silver sulfide on its surface. The chip resistor of the present disclosure includes a resistor layer disposed on a top surface of a substrate; a first upper electrode layer disposed at both sides of the resistor layer and being electrically connected to the resistor layer; and a second upper electrode layer disposed on the first upper electrode layer and including between 75% by weight and 85% by weight (inclusive) of silver particles with an average particle diameter ranging from 0.3 ?m to 2 ?m, between 1% by weight and 10% by weight (inclusive) of carbon, and a resin.

Abstract: An LED encapsulation resin body disclosed in the present application includes: a phosphor; a heat resistance material arranged on, or in the vicinity of, a surface of the phosphor; and a silicone resin in which the phosphor with the heat resistance material arranged thereon is dispersed.

Abstract: A light receiving region 21 and a floating diffusion region 22 are formed apart from each other in a semiconductor substrate 20 (S11), translucent adhesive 31 is applied to an area corresponding to the light receiving region 21 on the semiconductor substrate 20 (S22), and a translucent plate 30 is attached to the semiconductor substrate 20 on which the translucent adhesive 31 has been applied (S23). In this semiconductor manufacturing process, before the translucent adhesive 31 is applied, a dam member 24 is formed on the semiconductor substrate 20 so as to prevent the translucent adhesive 31 from flowing into an area corresponding to the floating diffusion region 22 on the semiconductor substrate 20 (S18).

Abstract: A method for forming dense ceramics, particularly a ceramic coating by a low temperature treatment is provided. The method for forming ceramics according to the invention is characterized in that a polysilazane having a number-average molecular weight of 100 to 50,000 or a modified polysilazane thereof is subjected to a heat treatment, then exposed to an atmosphere containing water vapor or immersed in distilled water containing a catalyst, or both, or is brought into contact with Pd.sup.2+ ions and water, the polysilazane having a skeleton comprising the unit represented by the following general formula (I): ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a group other than the above and having a carbon atom directly attached to the silicon atom, an alkylsilyl group, an alkylamino group and an alkoxy group; with the proviso that at least one of R.sup.1, R.sup.2 and R.sup.3 is a hydrogen atom.

Abstract: A method for forming dense ceramics, particularly a ceramic coating by a low temperature treatment is provided. The method for forming ceramics according to the invention is characterized in that a polysilazane having a number-average molecular weight of 100 to 50,000 or a modified polysilazane thereof is subjected to a heat treatment, then exposed to an atmosphere containing water vapor or immersed in distilled water containing a catalyst, or both, or is brought into contact with Pd.sup.2+ ions and water, the polysilazane having a skeleton comprising the unit represented by the following general formula (I): ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a group other than the above and having a carbon atom directly attached to the silicon atom, an alkylsilyl group, an alkylamino group and an alkoxy group; with the proviso that at least one of R.sub.1, R.sup.2 and R.sup.3 is a hydrogen atom.