Abstract: Provided is a semiaromatic polyamide fil having an average linear expansion coefficient in the width direction, measured under conditions of 20 to 125° C., of ?90 to 0 ppm/° C.

Abstract: A higher usage fee is set for external supply power as predetermined contract power increases. A battery management system includes: a contract power information acquisition section configured to acquire contract power information indicating the contract power; a power-in-use estimation section configured to estimate power in use in the storage plant in a target time zone in future; a discharge plan creation section configured to create a discharge plan in which discharge power from the battery is supplied as power to be used in the storage plant when the power in use in the target time zone exceeds the contract power; and a discharging control section configured to discharge the battery on the basis of the discharge plan. The power in use in the target time zone is estimated by the power-in-use estimation section.

Abstract: A battery management system includes: a battery module accommodation section; a charging and discharging control section; and a shipping target selection section. The battery module accommodation section is configured to separately accommodate a plurality of battery modules in blocks. The blocks each includes a predetermined number of the battery modules. The predetermined number is greater than or equal to 2. The charging and discharging control section is configured to charge and discharge the battery modules in units of the blocks. The battery modules are accommodated in the battery module accommodation section. The shipping target selection section is configured to select, in units of the blocks, the battery modules serving as shipping targets from the battery modules accommodated in the battery module accommodation section.

Abstract: A thermosensitive part sensing temperature; a temperature sensor for measurement provided in the unit and measuring temperature by contacting the unit with a body to be measured; a temperature detecting part detecting, from when the unit contacts the body, the time when the sensor senses a difference from an initial temperature of the sensor, and a measured temperature of the sensor at that time, and detecting, from when the difference is sensed, a time after a certain length of time and a measured temperature of the sensor at that time; an estimating part estimating, from the time when the difference is sensed and a time after a certain length of time, the time when the thermosensitive part contacts the body, and the measured temperature at that time; and a heat conduction analyzing part estimating the measured temperature based on output information from the temperature detecting part and the estimating part.

Abstract: Provided is a semiaromatic polyamide film having an average linear expansion coefficient in the width direction, measured under conditions of 20 to 125° C., of -90 to 0 ppm/°C.

Abstract: The objective of the present invention is to provide a stretched polyamide film which is excellent in laminatability, lamination strength, mechanical properties and shock resistance property and which has effects to prevent goods being broken and protect a content from vibration and shock at the time of transportation when used a various packaging materials. The present invention relates to a stretched polyamide film, wherein a main constituent is nylon 6; at least one surface layer meets the following conditions (1) and (2); and the stretched polyamide film meets the following condition (3): (1) a relaxation degree of a surface layer orientation measured by IR spectroscopy is within a range of not less than 0.3 and not more than 0.5; (2) a crystallization degree of a surface layer measured by IR spectroscopy is within a range of not less than 1.0 and not more than 1.4; (3) a heat shrinkage rate (%) in TD direction at 160° C. for 10 minutes is within a range of not less than 0.6 and not more than 4.

Abstract: A semi-aromatic polyamide film having a thermal shrinkage factor in the longitudinal direction of the film, SMD, of ?1.0 to 1.5% and a thermal shrinkage factor in the width direction of the film, STD, of ?1.0 to 1.5% as measured under the conditions of 250° C. and 5 min, a tensile breaking elongation of 70% or more in the longitudinal direction and the width direction, and a haze of 14% or less.

Abstract: The sound absorbing material 50 comprises: a felt-like fiber body 51 which includes 15 to 70% by weight of fine fibers with a fineness of 1 denier or less, 20 to 60% by weight of hollow fibers having inner cavities, and 10 to 40% by weight of binder fibers that join the fibers together; and a nonwoven fabric 52 that is laminated on a surface of the felt-like fiber body 51. The nonwoven fabric 52 includes a plurality of drawn long fibers arranged and oriented in one direction. An average diameter of the plurality of long fibers is in the range of 1 to 4 ?m. The sound absorbing material 50 has a thickness in the range of 8 to 45 mm and a bulk density of 20 kg/m3 or less.

Abstract: A laminated film having a resin layer laminated on at least one surface of a base film. The laminated film is characterized by: the base film being a semi-aromatic polyamide film that has been at least uniaxially stretched; the resin layer having a thickness of 0.03 to 0.5 ?m; and the close adhesion between the base film and the resin layer, according to the cross-cut method described in JIS K 5600, being 95% or more.

Abstract: Disclosed is a gas barrier laminate including a gas barrier layer (II) laminated on a plastic substrate (I), wherein the plastic substrate (I) includes a metal compound in a content of 0.1 to 70% by mass and the gas barrier layer (II) includes a polycarboxylic acid.

Abstract: An exhaust gas treatment system treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment. The exhaust gas treatment system includes a pump unit which emits the mixed gas discharged from the semiconductor fabrication equipment, a compressor which compresses the mixed gas emitted by the pump unit and sends the mixed gas to a rear stage, a gas accommodation unit which collects and accommodates the compressed mixed gas, a flow rate control unit which controls a flow rate of the mixed gas supplied from the gas accommodation unit, and a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas. Accordingly, the exhaust gas treatment system may be stably operated in a state where a change in pressure of the mixed gas discharged from the semiconductor fabrication equipment is alleviated.

Abstract: An exhaust gas treatment system treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment. The exhaust gas treatment system includes a pump unit which emits the mixed gas discharged from the semiconductor fabrication equipment, a compressor which compresses the mixed gas emitted by the pump unit and sends the mixed gas to a rear stage, a gas accommodation unit which collects and accommodates the compressed mixed gas, a flow rate control unit which controls a flow rate of the mixed gas supplied from the gas accommodation unit, and a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas. Accordingly, the exhaust gas treatment system may be stably operated in a state where a change in pressure of the mixed gas discharged from the semiconductor fabrication equipment is alleviated.

Abstract: An exhaust gas processing apparatus for processing a mixed gas discharged from a semiconductor manufacturing apparatus is provided with: an adsorption separation unit for separating a monosilane gas that requires abatement and a hydrogen gas that does not require abatement by allowing the mixed gas to pass through and then by mainly adsorbing the monosilane gas among a plurality of types of gases contained in the mixed gas; a heating unit for desorbing the monosilane adsorbed onto the adsorption separation unit; a silane gas abatement unit for abating a monosilane gas desorbed from the adsorption separation unit; and a hydrogen gas discharge unit for discharging a hydrogen gas separated from the mixed gas by the adsorption separation unit.

Abstract: Input image data is stored in a register matrix of 7.times.7 in a successive manner. A pattern detecting section detects a black- or white-pixel connective pattern of the reference pixels of a marked pixel. When the reference pixel pattern is a black-pixel connective pattern of 1:n (n=1, 2, 3, . . . ), an enlarging/smoothing processor section interpolates a part of the enlarged marked pixel with black pixels. When it is a white-pixel connective pattern of 1:n (n=1, 2, 3, . . . ), the enlarging/smoothing processor erases a part of the enlarged marked pixel. As a result, the oblique line can be smoothed. The line that is made thick by the smoothing process can be shaped into a thin line. Thus, a high-quality image can be produced.

Abstract: 2,3-Dihalogeno-6-trifluoromethylbenzaldehydes of general formula (I) useful as intermediates for the preparation of fungicides for agricultural and horticultural use;a process for the preparation of the same; and process for preparing 2,3-dihalogeno-6-trifluoromethylbenzamidoximes of general formula (IV) from the above compounds, wherein X.sup.1 and X.sup.2 are each independently fluoro, chloro or bromo.

Abstract: Disclosed herein is an antistatic photo-resist containing an antistatic agent. Since antistatic photo-resist according to the present invention is hardly charged, it can be suitably used as a mask in implanting ions into semiconductor substrate.

Abstract: The present invention relates to a compound having the formula ##STR1## (wherein R.sub.1 denotes a phenyl radical (which may be substituted by halogen atoms, C.sub.1-6 alkyl radicals, C.sub.1-6 alkoxy radicals (which may be substituted by C.sub.1-6 alkoxy radicals,) C.sub.2-6 alkynyloxy radicals, amino radicals, nitro radicals, phenyl radicals, phenoxy radicals or C.sub.1-6 alkylthio radicals), a five or six membered heterocyclic radical (which may be substituted by halogen atoms or C.sub.1-6 alkyl radicals), a C.sub.1-6 alkyl radical (which may be substituted by aryl radicals) or ##STR2## wherein each or r.sup.1 and r.sup.2 denotes a C.sub.1-6 alkyl radical or a phenyl radical)X denotes oxygen atom or sulfur atom;A denotes ##STR3## B denotes ##STR4## D denotes ##STR5## n, m and l denote 0 or 1, (wherein r.sup.3, r.sup.4, r.sup.6, r.sup.7, r.sup.9 and r.sup.10, respectively, denotes hydrogen atom, halogen atom, C.sub.1-6 alkyl radical, the radical expressed by the formula --Y-- r.sup.12 (wherein r.sup.

Abstract: Disclosed herein is an antistatic photo-resist containing an antistatic agent. Since antistatic photo-resist according to the present invention is hardly charged, it can be suitably used as a mask in implanting ions into semiconductor substrate.

Abstract: A compound of the general formula ##STR1## wherein R.sub.1 is lower alkyl,R.sub.2 is selected from the group consisting of lower alkyl, lower alkenyl and lower alkynyl,A is a formula which is selected from the formula consisting of: ##STR2## where R.sub.3 is selected from the group consisting of hydrogen and lower alkyl,R.sub.4 is selected from the group consisting of lower alkyl and phenyl, andR.sub.3 forms cyclo-alkylene of 4 to 5 carbon atoms by combining with R.sub.4 ; ##STR3## where R.sub.5 and R.sub.7 are selected from the group consisting of hydrogen and lower alkyl andR.sub.6 is lower alkyl; and ##STR4## where R.sub.8 is selected from the group consisting of hydrogen and lower alkyl andR.sub.9 is lower alkyl;Or a metal salt of the compound defined herein above is useful as herbicide.