Abstract: Provided is a thermoplastic resin film having a haze of 13% or less, wherein a loop stiffness value in at least one direction on a film plane as measured by a loop stiffness tester is 140 mN/cm or more.

Abstract: A laminated film having a resin layer laminated on at least one surface of a base film. The laminated film is characterized by: the base film being a semi-aromatic polyamide film that has been at least uniaxially stretched; the resin layer containing fine particles; the thermal shrinkage factor in the longitudinal direction SMD and the thermal shrinkage factor in the width direction STD of the film measured under conditions of 250° C.×5 minutes each being ?1.0 to 1.5%; the tensile elongations at break in the longitudinal direction and in the width direction each being 70% or more; and the haze being 3% or less.

Abstract: Provided is a semiaromatic polyamide fil having an average linear expansion coefficient in the width direction, measured under conditions of 20 to 125° C., of ?90 to 0 ppm/° C.

Abstract: Provided is a semiaromatic polyamide film having an average linear expansion coefficient in the width direction, measured under conditions of 20 to 125° C., of -90 to 0 ppm/°C.

Abstract: The objective of the present invention is to provide a stretched polyamide film which is excellent in laminatability, lamination strength, mechanical properties and shock resistance property and which has effects to prevent goods being broken and protect a content from vibration and shock at the time of transportation when used a various packaging materials. The present invention relates to a stretched polyamide film, wherein a main constituent is nylon 6; at least one surface layer meets the following conditions (1) and (2); and the stretched polyamide film meets the following condition (3): (1) a relaxation degree of a surface layer orientation measured by IR spectroscopy is within a range of not less than 0.3 and not more than 0.5; (2) a crystallization degree of a surface layer measured by IR spectroscopy is within a range of not less than 1.0 and not more than 1.4; (3) a heat shrinkage rate (%) in TD direction at 160° C. for 10 minutes is within a range of not less than 0.6 and not more than 4.

Abstract: A semi-aromatic polyamide film having a thermal shrinkage factor in the longitudinal direction of the film, SMD, of ?1.0 to 1.5% and a thermal shrinkage factor in the width direction of the film, STD, of ?1.0 to 1.5% as measured under the conditions of 250° C. and 5 min, a tensile breaking elongation of 70% or more in the longitudinal direction and the width direction, and a haze of 14% or less.

Abstract: The sound absorbing material 50 comprises: a felt-like fiber body 51 which includes 15 to 70% by weight of fine fibers with a fineness of 1 denier or less, 20 to 60% by weight of hollow fibers having inner cavities, and 10 to 40% by weight of binder fibers that join the fibers together; and a nonwoven fabric 52 that is laminated on a surface of the felt-like fiber body 51. The nonwoven fabric 52 includes a plurality of drawn long fibers arranged and oriented in one direction. An average diameter of the plurality of long fibers is in the range of 1 to 4 ?m. The sound absorbing material 50 has a thickness in the range of 8 to 45 mm and a bulk density of 20 kg/m3 or less.

Abstract: A laminated film having a resin layer laminated on at least one surface of a base film. The laminated film is characterized by: the base film being a semi-aromatic polyamide film that has been at least uniaxially stretched; the resin layer having a thickness of 0.03 to 0.5 ?m; and the close adhesion between the base film and the resin layer, according to the cross-cut method described in JIS K 5600, being 95% or more.

Abstract: Disclosed is a gas barrier laminate including a gas barrier layer (II) laminated on a plastic substrate (I), wherein the plastic substrate (I) includes a metal compound in a content of 0.1 to 70% by mass and the gas barrier layer (II) includes a polycarboxylic acid.

Abstract: An exhaust gas treatment system treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment. The exhaust gas treatment system includes a pump unit which emits the mixed gas discharged from the semiconductor fabrication equipment, a compressor which compresses the mixed gas emitted by the pump unit and sends the mixed gas to a rear stage, a gas accommodation unit which collects and accommodates the compressed mixed gas, a flow rate control unit which controls a flow rate of the mixed gas supplied from the gas accommodation unit, and a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas. Accordingly, the exhaust gas treatment system may be stably operated in a state where a change in pressure of the mixed gas discharged from the semiconductor fabrication equipment is alleviated.

Abstract: An exhaust gas treatment system treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment. The exhaust gas treatment system includes a pump unit which emits the mixed gas discharged from the semiconductor fabrication equipment, a compressor which compresses the mixed gas emitted by the pump unit and sends the mixed gas to a rear stage, a gas accommodation unit which collects and accommodates the compressed mixed gas, a flow rate control unit which controls a flow rate of the mixed gas supplied from the gas accommodation unit, and a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas. Accordingly, the exhaust gas treatment system may be stably operated in a state where a change in pressure of the mixed gas discharged from the semiconductor fabrication equipment is alleviated.

Abstract: An exhaust gas processing apparatus for processing a mixed gas discharged from a semiconductor manufacturing apparatus is provided with: an adsorption separation unit for separating a monosilane gas that requires abatement and a hydrogen gas that does not require abatement by allowing the mixed gas to pass through and then by mainly adsorbing the monosilane gas among a plurality of types of gases contained in the mixed gas; a heating unit for desorbing the monosilane adsorbed onto the adsorption separation unit; a silane gas abatement unit for abating a monosilane gas desorbed from the adsorption separation unit; and a hydrogen gas discharge unit for discharging a hydrogen gas separated from the mixed gas by the adsorption separation unit.

Abstract: Input image data is stored in a register matrix of 7.times.7 in a successive manner. A pattern detecting section detects a black- or white-pixel connective pattern of the reference pixels of a marked pixel. When the reference pixel pattern is a black-pixel connective pattern of 1:n (n=1, 2, 3, . . . ), an enlarging/smoothing processor section interpolates a part of the enlarged marked pixel with black pixels. When it is a white-pixel connective pattern of 1:n (n=1, 2, 3, . . . ), the enlarging/smoothing processor erases a part of the enlarged marked pixel. As a result, the oblique line can be smoothed. The line that is made thick by the smoothing process can be shaped into a thin line. Thus, a high-quality image can be produced.

Abstract: 2,3-Dihalogeno-6-trifluoromethylbenzaldehydes of general formula (I) useful as intermediates for the preparation of fungicides for agricultural and horticultural use;a process for the preparation of the same; and process for preparing 2,3-dihalogeno-6-trifluoromethylbenzamidoximes of general formula (IV) from the above compounds, wherein X.sup.1 and X.sup.2 are each independently fluoro, chloro or bromo.

Abstract: Disclosed herein is an antistatic photo-resist containing an antistatic agent. Since antistatic photo-resist according to the present invention is hardly charged, it can be suitably used as a mask in implanting ions into semiconductor substrate.

Abstract: The present invention relates to a compound having the formula ##STR1## (wherein R.sub.1 denotes a phenyl radical (which may be substituted by halogen atoms, C.sub.1-6 alkyl radicals, C.sub.1-6 alkoxy radicals (which may be substituted by C.sub.1-6 alkoxy radicals,) C.sub.2-6 alkynyloxy radicals, amino radicals, nitro radicals, phenyl radicals, phenoxy radicals or C.sub.1-6 alkylthio radicals), a five or six membered heterocyclic radical (which may be substituted by halogen atoms or C.sub.1-6 alkyl radicals), a C.sub.1-6 alkyl radical (which may be substituted by aryl radicals) or ##STR2## wherein each or r.sup.1 and r.sup.2 denotes a C.sub.1-6 alkyl radical or a phenyl radical)X denotes oxygen atom or sulfur atom;A denotes ##STR3## B denotes ##STR4## D denotes ##STR5## n, m and l denote 0 or 1, (wherein r.sup.3, r.sup.4, r.sup.6, r.sup.7, r.sup.9 and r.sup.10, respectively, denotes hydrogen atom, halogen atom, C.sub.1-6 alkyl radical, the radical expressed by the formula --Y-- r.sup.12 (wherein r.sup.

Abstract: Disclosed herein is an antistatic photo-resist containing an antistatic agent. Since antistatic photo-resist according to the present invention is hardly charged, it can be suitably used as a mask in implanting ions into semiconductor substrate.

Abstract: A compound of the general formula ##STR1## wherein R.sub.1 is lower alkyl,R.sub.2 is selected from the group consisting of lower alkyl, lower alkenyl and lower alkynyl,A is a formula which is selected from the formula consisting of: ##STR2## where R.sub.3 is selected from the group consisting of hydrogen and lower alkyl,R.sub.4 is selected from the group consisting of lower alkyl and phenyl, andR.sub.3 forms cyclo-alkylene of 4 to 5 carbon atoms by combining with R.sub.4 ; ##STR3## where R.sub.5 and R.sub.7 are selected from the group consisting of hydrogen and lower alkyl andR.sub.6 is lower alkyl; and ##STR4## where R.sub.8 is selected from the group consisting of hydrogen and lower alkyl andR.sub.9 is lower alkyl;Or a metal salt of the compound defined herein above is useful as herbicide.