Abstract: To provide an electrode for non-aqueous electrolyte batteries, which traps hydrogen sulfide gas, generated from the inside thereof for some reason, in the electrode, and suppresses the outflow of hydrogen sulfide gas to the outside of the battery. An electrode for lithium ion batteries includes a coating material which contains a silanol group and is present on at least a surface of an active material layer. The active material layer contains a sulfur-based material and a resin-based binder. The sulfur-based material is an active material capable of alloying with lithium metal or an active material capable of occluding lithium ions. The coating material containing the silanol group is a silicate having a siloxane bond or a silica fine particle aggregate having a siloxane bond as a component.

Abstract: An object of the present invention is to provide an optical transmission system capable of controlling a transmission capacity and a signal processing load of a MIMO equalizer, without depending on the number of propagation modes of the optical fiber.

Abstract: Provided are a negative electrode that is for use in a non-aqueous electrolyte secondary battery, includes a porous metal body as a current collector, contains a skeleton-forming agent highly infiltrated in the current collector so that it is less likely to suffer from structural degradation and provides improved cycle durability; and a non-aqueous electrolyte secondary battery including such a negative electrode. The negative electrode for use in a non-aqueous electrolyte secondary battery includes a current collector including a porous metal body; a first negative electrode material disposed in pores of the porous metal body and including a conductive aid, a binder, and a negative electrode active material including a silicon-based material; and a second negative electrode material disposed in pores of the porous metal body and including a skeleton-forming agent including a silicate having a siloxane bond.

Abstract: A laser processing apparatus includes a support unit that supports a wafer including a plurality of functional elements disposed adjacent to each other via a street, an irradiation unit that irradiates the street with laser light, and a control unit that controls the irradiation unit based on information about the streets so that a first region and a second region of the street are simultaneously irradiated with the laser light, and a power of the laser light for removing a surface layer of the street in the first region is higher than a power for removing the surface layer of the street in the first region. The information about the street includes information that a processing threshold value indicating a difficulty of laser processing in the first region is lower than a processing threshold value in the second region.

Abstract: A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

Abstract: A surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas. The surface modifying apparatus includes a processing vessel; a measuring unit; and a controller. The processing vessel is configured to accommodate the substrate therein. The measuring unit is configured to measure a value indicating an amount of moisture in the processing vessel. The controller is configured to determine whether or not bonding strength between the substrate and the another substrate, when it is assumed that the substrate modified in the processing vessel is bonded to the another substrate, is good based on the value indicating the amount of moisture in the processing vessel measured by the measuring unit.

Abstract: A surface modifying method of modifying a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas includes an adjusting process and a modifying process. In the adjusting process, an amount of moisture in a processing vessel is adjusted by supplying a humidified gas into the processing vessel allowed to accommodate the substrate therein. In the modifying process, the bonding surface of the substrate is modified by forming the plasma of the processing gas in the processing vessel in a state that the amount of moisture in the processing vessel is adjusted.

Abstract: The purpose of the present invention is to provide an optical fiber amplifier capable of seamlessly and collectively amplifying optical signals in a plurality of bands. In order to achieve the aforementioned purpose, the optical fiber amplifier according to the present invention is the optical fiber amplifier that amplifies multiple wavelength bands, and in cross-section, one signal light primary propagation region, and a doped region where rare-earth ions have been added, wherein the doped region includes the rare-earth-doped optical fiber existing other than the propagation region.

Abstract: A semiconductor device includes a semiconductor element, a wiring member, a sintered member between a first main electrode of the semiconductor element and the wiring member, and a sealing body. The wiring member includes a base material, a metal film on a face of the base material, and an uneven oxide film. The uneven oxide film includes a thick film portion and a thin film portion. An opposing face of the wiring member opposing the semiconductor element includes a mounting portion to which the first main electrode is bonded, an outer peripheral portion formed with the thick film portion and surrounding the semiconductor element, and an intermediate portion formed with the thin film portion between the mounting portion and the outer peripheral portion. The sintered member overlaps with the mounting portion and the intermediate portion in the plan view, and is in contact with the thin film portion.

Abstract: An unevenness correction data generation device suppressing the appearance of color unevenness when turning on R, G and B together includes a pattern generation unit causing red, green and blue images, in which display panel subpixels are turned on at the same gray level, to be displayed, a monochrome camera, a control unit generating first red, green and blue luminance correction data based on shooting data of the monochrome camera, a pattern generation unit causing the display panel to display a white image by causing red, green and blue images corrected with the respective luminance correction data to be displayed simultaneously, a color camera shooting the white image in color, and a control unit generating color correction data for correcting color unevenness based on shooting data of the color camera and generates unevenness correction data based on the red, green and blue luminance correction data and the color correction data.

Abstract: An etalon according to the present invention is an etalon in which light is made incident from a direction different from a direction perpendicular to an incident surface and is emitted from an emission surface facing the incident surface, the etalon comprising a dielectric that has a first end surface on the incident surface side and a second end surface on the emission surface side so as to oppose the first end surface, wherein a refractive index distribution of the dielectric is set in such a manner that a lateral shift of the light becomes smaller between the first end surface and the second end surface as compared with a uniform refractive index distribution etalon under a condition that an optical path length of the light is equal. Therefore, the light according to the present invention can provide excellent wavelength controllability.

Abstract: An optical deflector which includes a dielectric having a paraelectric phase and a trap for storing an electric charge therein and deflects light transmitted through the dielectric by applying a voltage in a direction perpendicular to a transmission direction of the dielectric is provided. The optical deflector includes a first conductor, the dielectric, a second conductor, and two insulators in contact with both side surfaces parallel to a voltage application direction of the dielectric between the first conductor and the second conductor in this order, wherein a voltage is applied between the first conductor and the second conductor, a temperature of the first conductor and the second conductor is controlled independently, and one of the side surfaces of the dielectric is irradiated with excitation light through one insulator.

Abstract: An optical deflector has a dielectric of a paraelectric phase and deflects light transmitted through the dielectric by applying a voltage in a direction perpendicular to a transmission direction of the dielectric, the optical deflector including, in order, a first temperature control element, a first conductor on which a first sensor is disposed, the dielectric, a second conductor on which a second sensor is disposed, and a second temperature control element, wherein a voltage is applied between the first conductor and the second conductor, the dielectric is irradiated with excitation light having a substantially uniform intensity in an application direction of the voltage, and a temperature of the first conductor and a temperature of the second conductor are set to predetermined temperatures.

Abstract: An input signal correction device for reducing power consumption is compatible with a variety of display panels, and includes an input circuit, extension/degeneration circuit, separation/recovery circuit and delay adjustment circuit operating at frequency f, demura circuit operating at frequency f/2, and adder circuit.

Abstract: An input signal correction device includes an input circuit, extension circuit, degenerate circuit, separation circuit, recovery circuit and delay adjustment circuit that operate at an operating frequency f, demura circuit that operates at an operating frequency f/2, and adder circuit. The extension circuit extends the period of R and B input signals by a factor of 2 and outputs preprocessing signals, the degenerate circuit degenerates a G input signal, the demura circuit corrects preprocessing signals from the extension and degenerate circuits and outputs correction signals, the separation circuit reduces the period of the R and B correction signals to ½ and outputs differential signals, recovery circuit reduces the period of G correction signal to ½ and outputs the same differential signal over two periods, the delay adjustment circuit delays the input and output signals, and the adder circuit adds the differential signals to the delay signals and outputs output signals.

Abstract: Adopted is a laser beam irradiation optical unit for forming a spot on an object to be machined and irradiating the object to be machined with a laser beam emitted from a laser oscillator to perform laser machining including an energy intensity distribution adjustment mechanism that adjusts an energy intensity distribution of the laser beam at the spot in an irradiation trajectory of the laser beam from the laser oscillator to the object to be machined, in which the energy intensity distribution adjustment mechanism adjusts the energy intensity distribution of the laser beam at the spot so as to be non-uniform.

Abstract: A temperature measuring device includes a Fabry-Perot interferometer, a power supply, and a light source. The temperature measuring device observes the light emitted from the light source and transmitted through the Fabry-Perot interferometer and obtains the temperature of a measurement environment in which the Fabry-Perot interferometer is placed. The light source emits a plurality of lights to the Fabry-Perot interferometer.

Abstract: An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.

Abstract: A diffraction element device includes a diffractive element and a power source, the diffractive element includes a substrate and a plurality of multi-step structures, each of the multi-step structures is composed of a plurality of steps, an electrode is provided at a part of the multi-step structures, a piezoelectric material or an electrostrictive material is included in a part of the multi-step structures, the power source is connected to the electrode or the substrate, and a height of the multi-step structures changes due to a voltage applied from the power source.

Abstract: A spectroscopic device includes a first optical element for wavelength-dispersing the light, a second optical element for converging the light which has been wavelength-dispersed, a light deflector for changing a trajectory of the converged light, the light deflector being of a transmission type and having an electro-optical effect, a drive power supply that applies a voltage to the light deflector, light receiver that detects at a predetermined position the light of which the trajectory has been changed, and a process unit that derives the wavelength of the detected light from the voltage.