Abstract: An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm?3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm?2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10?2 cm2 or at least 1×10?3 cm2.

Abstract: A fibrous body processing apparatus includes a humidifying unit, a first processing unit, a second processing unit, a first supply passage, a second supply passage, and a returning passage. The humidifying unit generates humidified air. The first processing unit processes a material that contains fibers. The second processing unit processes the material that was processed at the first processing unit. Humidified air is supplied from the humidifying unit to the first processing unit through the first supply passage. Humidified air is supplied from the first processing unit to the second processing unit, together with the material, through the second supply passage. The returning passage includes an upstream-side end portion and a downstream-side end portion. Humidified air is returned from the second supply passage or the second processing unit to the humidifying unit through the returning passage.

Abstract: A fibrous body processing apparatus includes a coarsely-crushed-pieces reservoir unit; a humidifying unit that generates humidified air and supplies the humidified air to the coarsely-crushed-pieces reservoir unit; a weight measurement unit that measures a weight of the coarsely crushed pieces let out of the coarsely-crushed-pieces reservoir unit; a fixed amount supplying unit that supplies a fixed amount of the coarsely crushed pieces measured by the weight measurement unit; a defibrating unit that defibrates the coarsely crushed pieces supplied from the fixed amount supplying unit; a first transportation portion through which the coarsely crushed pieces are sent from the coarsely-crushed-pieces reservoir unit to the weight measurement unit; a second transportation portion through which the coarsely crushed pieces are sent from the fixed amount supplying unit to the defibrating unit; and a generated at the humidifying unit is supplied to the defibrating unit while bypassing the weight measurement unit.

Abstract: There is provided a steel sheet having a chemical composition comprising, in mass %, C: 0.05 to 0.25%, Si: 0.2 to 2.0%, Mn: 1.2 to 3.0%, P: 0.030% or less, S: 0.050% or less, Al: 0.01 to 0.55%, N: 0.0100% or less, and Ti: 0.010 to 0.250%, with the balance: Fe and impurities, wherein a random intensity ratio of a texture in a near-surface portion of the steel sheet is 8.0 or less, and a minimum angle formed between a maximum strength orientation in a {110} pole figure of the texture and a normal direction of a rolled surface of the steel sheet is 10° or less.

Abstract: A method of manufacturing a silicon carbide semiconductor device includes the following steps. In a silicon carbide substrate including a silicon carbide single-crystal substrate and a silicon carbide epitaxial film provided on the silicon carbide single-crystal substrate, a reference mark serving as a reference of two dimensional position coordinates is formed. After forming the reference mark, at least one of polishing or cleaning is performed on a reference mark formation surface of the silicon carbide substrate. Position coordinates of a defect present in the silicon carbide substrate are specified based on the reference mark. A device active region is formed in the silicon carbide substrate. Position coordinates of the device active region are specified based on the reference mark. A pass/fail judgement of the device active region is made by associating the position coordinates of the defect with the position of the device active region.

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

Abstract: A device may include a coil unit assembly that includes a first, second, and third coil unit annularly arranged. Further, may include a busbar provided on an outer peripheral surface of the coil unit assembly, wherein when a direction in which an axis of the stator extends is defined as an axial direction, a direction which is orthogonal to the axial direction and in which outer peripheral surface and inner peripheral surface of the stator face each other is a radial direction, and a direction along an outer periphery of the stator when viewed from the axial direction is a circumferential direction, wherein the coil units each include a split core that includes a tooth that extends in the radial direction, an insulator mounted to overlap at least the tooth of the split core, and a coil that includes a winding wound around the tooth of the split core with the insulator interposed therebetween.

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

Abstract: A silicon carbide epitaxial substrate according to a present disclosure includes a silicon carbide substrate and a silicon carbide epitaxial layer disposed on the silicon carbide substrate. The silicon carbide epitaxial layer includes a boundary surface in contact with the silicon carbide substrate and a main surface opposite to the boundary surface. The main surface has an outer circumferential edge, an outer circumferential region extending within 5 mm from the outer circumferential edge, and a central region surrounded by the outer circumferential region. When an area density of double Shockley stacking faults in the outer circumferential region is defined as a first area density, and an area density of double Shockley stacking faults in the central region is defined as a second area density, the first area density is five or more times as large as the second area density, the second area density is 0.2 cm?2 or more.

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

Abstract: A motor that includes a plurality of stator members and a busbar member. The busbar member connects to coil end portions of a predetermined stator member of the plurality of stator members. The busbar member may comprise a first busbar, a second busbar, and a third busbar. The busbars may include an annular-shaped base portion, and a connection terminal connected to an outer circumference of the base portion and connected to the coil end portions. The busbar member and the plurality of stator members may be aligned in an axial direction. Each connection terminal of the busbars may have a shape projecting toward the stator member relative to the base portion.

Abstract: A heat exchanger includes a heat exchanger core, an intake tank, and a flow limiting portion. The heat exchanger core includes a stacked heat exchange portion, a distribution portion, and a collection portion. The stacked heat exchange portion defines first fluid flow paths through which a first fluid flows in a first direction, and second fluid flow paths through which a second fluid flows in a third direction. The distribution portion is configured to distribute the first fluid to the first fluid flow paths. The collection portion is configured to collect the first fluid from the first fluid flow paths. The flow limiting portion is configured to suppress an inflow of the second fluid from the intake tank into the distribution portion and the collection portion. The flow limiting portion and the intake tank are provided as a single component.

Abstract: A stator member includes a stator core, a coil, and an insulator. The stator core has a shape extending in an axial direction, and has a side surface parallel to the axial direction. The coil has a linear shape and is wound around the side surface of the stator core. The coil has a coil end portion 231 at one end of the coil having the linear shape, and a coil end portion 232 at another end of the coil having the linear shape. The insulator has insulation properties, and is provided with an outer member. The outer member has a first recess and a second recess extending in a thickness direction. The coil end portion 231 is inserted into the first recess. The coil end portion 232 is inserted into the second recess.

Abstract: A stator member may include a columnar stator core, a linear coil, and an insulating insulator. The linear coil may be wound around the stator core. The insulator may be disposed between the stator core and the coil. Furthermore, the insulator may include a central member and an outer member. The central member may cover the stator core. The outer member may be connected to an outside of the central member in an axial direction of the stator core. The outer member may include a surface extending in a thickness direction in which the central member and the outer member are arranged, and a groove recessed in a direction orthogonal to the thickness direction from the surface. A connection terminal of a busbar member may be inserted into the groove.

Abstract: A motor that includes a plurality of stator members and a busbar member. A coil may be wound around each of the plurality of stator members, and the plurality of stator members may be arranged in an annular shape when viewed in an axial direction of the motor. The busbar member may connect to the coil ends of the plurality of stator members. The busbar member may comprise an annular shaped base portion, and a connection terminal connected to the base portion and connected to the coil end portions. The connection terminal may be provided with two recesses. The coil end portion of a first stator member and the coil end portion of a second stator member may be inserted through the two recesses respectively, where the first stator member and the second stator member are adjacent to each other.

Abstract: A bonded body is formed of a first member and a second member. The first member has a first base portion and a first welded portion which protrudes from the first base portion toward the second member side. The second member has a second base portion and a second welded portion which protrudes from the second base portion toward the first member side. In a first region of the joint portion, a first rib formed so as to project from the first base portion toward the second member side covers the first welded portion and the second welded portion from the side. In a second region different from the first region, a second rib formed so as to project from the second base portion toward the first member side covers the first welded portion and the second welded portion from the side.

Abstract: An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm?3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm?2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10?2 cm2 or at least 1×10?3 cm2.

Abstract: An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm?3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm?2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10?2 cm2 or at least 1×10?3 cm2.

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

Abstract: A busbar device includes an insulating sheet that is annularly formed by laminating an insulating layer and an adhesive layer and also includes an annular busbar. Moreover, the busbar is adhered to the adhesive layer. The insulating sheet and the busbar are laminated in a direction parallel to a central axis of the busbar.