Patents by Inventor Takashi Sekito

Takashi Sekito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220025109
    Abstract: The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent.
    Type: Application
    Filed: February 20, 2020
    Publication date: January 27, 2022
    Inventors: M. Dalil RAHMAN, Takashi SEKITO
  • Publication number: 20210181636
    Abstract: The present invention provides a resist underlayer forming composition, which is well in heat resistance and gap filling. Further, the present invention provides methods of manufacturing a resist underlayer and semiconductor device using it. [Means for Solution] A composition comprising a allyloxy derivative having a specific group and a solvent, and methods of manufacturing a resist underlayer and semiconductor device using it.
    Type: Application
    Filed: October 30, 2018
    Publication date: June 17, 2021
    Inventors: Shigemasa NAKASUGI, Hiroshi YANAGITA, Takashi SEKITO, Yusuke HAMA, Yuriko MATSUURA
  • Publication number: 20200401046
    Abstract: [Problem to be Solved] An object is to provide a compound with good heat resistance. And another object is to provide a coating made exhibits less film shrinkage, good gap filling property and good planarization. [Solution] The present invention provides an ethynyl derived composite and a composition comprising thereof. And the present invention provides a method for manufacturing a coating by it, and a method for manufacturing a device.
    Type: Application
    Filed: December 17, 2018
    Publication date: December 24, 2020
    Applicant: Merck Patent GmbH
    Inventors: Shigemasa NAKASUGI, Yusuke HAMA, Hiroshi YANAGITA, Takashi SEKITO, Yuriko MATSUURA
  • Publication number: 20200044158
    Abstract: An object is to provide a semiconductor material and coating having high solubility in solvents and having advantageous filling property, high heat resistance, and/or high etching resistance. Another object is to provide a method for manufacturing a semiconductor using the semiconductor material. Still another object is to provide a novel compound. Provided are: a semiconductor material consisting of a specific aromatic hydrocarbon ring derivative; methods for manufacturing a coating and a semiconductor using the semiconductor material; and a compound consisting of a specific aromatic hydrocarbon ring derivative.
    Type: Application
    Filed: December 20, 2017
    Publication date: February 6, 2020
    Inventors: Shigemasa NAKASUGI, Hiroshi YANAGITA, Kazunori KUROSAWA, Takashi SEKITO, Yusuke HAMA, Yuriko MATSUURA
  • Patent number: 9921481
    Abstract: The present invention provides a composition enabling to form a fine negative photoresist pattern free from troubles such as surface roughness, bridge defects or unresolved defects, and the invention also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by applying to a negative resist pattern from a chemically amplified resist composition and fattening the resist pattern. This composition comprises a polymer comprising a repeating unit having an amino group or a polymer mixture, and a solvent, and further comprises a specific amount of an acid or indicates a specific pH value. The polymer mixture comprises polymers whose HSP distance, determined from Hansen solubility parameter, is 3 or more. In the pattern formation method, the composition is cast on a negative photoresist pattern beforehand obtained by development with an organic solvent developer and is then heated to form a fine pattern.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: March 20, 2018
    Assignee: AZ Electronic Materials (Luxembourg) S.à r.l.
    Inventors: Kazuma Yamamoto, Yoshihiro Miyamoto, Takashi Sekito, Tatsuro Nagahara
  • Publication number: 20160327867
    Abstract: [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to solve the problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
    Type: Application
    Filed: July 21, 2016
    Publication date: November 10, 2016
    Inventors: Tetsuo OKAYASU, Takashi SEKITO, Masahiro ISHII
  • Patent number: 9448485
    Abstract: [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
    Type: Grant
    Filed: October 10, 2012
    Date of Patent: September 20, 2016
    Assignee: MERCK PATENT GMBH
    Inventors: Tetsuo Okayasu, Takashi Sekito, Masahiro Ishii
  • Patent number: 9411232
    Abstract: The present invention provides a composition enabling to form a fine negative photoresist pattern less suffering from surface roughness, and also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition, and it contains a polymer comprising a repeating unit having an amino group, a solvent, and an acid. In the pattern formation method, the composition is cast on a positive photoresist pattern beforehand obtained by development and is then heated to form a fine pattern.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: August 9, 2016
    Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: Tatsuro Nagahara, Takashi Sekito, Kazuma Yamamoto, Masakazu Kobayashi, Noboru Satake, Masahiro Ishii
  • Patent number: 9360756
    Abstract: The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.
    Type: Grant
    Filed: October 1, 2013
    Date of Patent: June 7, 2016
    Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: Kazuma Yamamoto, Masahiro Ishii, Takashi Sekito, Hiroshi Yanagita, Shigemasa Nakasugi, Go Noya
  • Publication number: 20160011508
    Abstract: The present invention provides a composition enabling to form a fine negative photoresist pattern less suffering from surface roughness, and also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition, and it contains a polymer comprising a repeating unit having an amino group, a solvent, and an acid. In the pattern formation method, the composition is cast on a positive photoresist pattern beforehand obtained by development and is then heated to form a fine pattern.
    Type: Application
    Filed: March 14, 2014
    Publication date: January 14, 2016
    Inventors: Tatsuro NAGAHARA, Takashi SEKITO, Kazuma YAMAMOTO, Masakazu KOBAYASHI, Noboru SATAKE, Masahiro ISHII
  • Publication number: 20160002494
    Abstract: The present invention provides a composition enabling to form a fine negative photoresist pattern free from troubles such as surface roughness, bridge defects or unresolved defects, and the invention also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by applying to a negative resist pattern from a chemically amplified resist composition and fattening the resist pattern. This composition comprises a polymer comprising a repeating unit having an amino group or a polymer mixture, and a solvent, and further comprises a specific amount of an acid or indicates a specific pH value. The polymer mixture comprises polymers whose HSP distance, determined from Hansen solubility parameter, is 3 or more. In the pattern formation method, the composition is cast on a negative photoresist pattern beforehand obtained by development with an organic solvent developer and is then heated to form a fine pattern.
    Type: Application
    Filed: February 26, 2014
    Publication date: January 7, 2016
    Inventors: Kazuma YAMAMOTO, Yoshihiro MIYAMOTO, Takashi SEKITO, Tatsuro NAGAHARA
  • Publication number: 20150253669
    Abstract: The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.
    Type: Application
    Filed: October 1, 2013
    Publication date: September 10, 2015
    Applicant: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: Kazuma Yamamoto, Masahiro Ishii, Takashi Sekito, Hiroshi Yanagita, Shigemasa Nakasugi, Go Noya
  • Patent number: 9091920
    Abstract: [Object] To provide a photosensitive siloxane resin composition excellent in alkali-solubility and in sensitivity, and also to provide a pattern-formation method employing that. [Means] The present invention provides a photosensitive siloxane resin composition comprising: a siloxane resin having silanol groups or alkoxysilyl groups, a crown ether, a photosensitive material, and an organic solvent. This photosensitive composition is cast on a substrate, subjected to imagewise exposure, treated with an alkali aqueous solution, and cured to form a pattern.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: July 28, 2015
    Assignee: Merck Patent GmbH
    Inventors: Takashi Sekito, Daishi Yokoyama, Takashi Fuke, Yuki Tashiro, Toshiaki Nonaka, Yasuaki Tanaka
  • Patent number: 8993214
    Abstract: A positive photosensitive siloxane composition comprising at least three types of following polysiloxanes (A), (B) and (C) obtained by hydrolyzing and condensing a silane compound represented by general formula (1) R1nSi (OR2)4-n, a diazonaphthoquinone derivative, and a solvent: a polysiloxane (A) such that if pre-baked the film thereof will be soluble in a 5 weight % TMAH aqueous solution and the solution rate of said film will be 1,000 ?/sec or less; a polysiloxane (B) such that if pre-baked the solution rate of the film thereof will be 4,000 ?/sec or more relative to a 2.38 weight % TMAH aqueous solution; and a polysiloxane (C) such that if pre-baked the solution rate of the film thereof will be between 200 and 3,000 ?/sec relative to a 2.38 weight % TMAH aqueous solution.
    Type: Grant
    Filed: May 15, 2012
    Date of Patent: March 31, 2015
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Daishi Yokoyama, Takashi Fuke, Yuji Tashiro, Takashi Sekito, Toshiaki Nonaka
  • Publication number: 20150017587
    Abstract: [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
    Type: Application
    Filed: October 10, 2012
    Publication date: January 15, 2015
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Tetsuo Okayasu, Takashi Sekito, Mashiro Ishii
  • Patent number: 8906993
    Abstract: [Object] To provide a coating composition excellent in coatability and free from viscosity increase caused by degradation over time, and also to provide a hardened film-formation method employing that. [Means] The present invention provides a coating composition comprising: a siloxane resin having silanol groups or alkoxysilyl groups, and a polyol having hydroxyl groups at both ends of a straight 2 to 5 carbon atom hydrocarbon chain. This coating composition enables to form a hardened film of high transparency, of high insulation and of low dielectricity.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: December 9, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Takashi Sekito, Daishi Yokoyama, Takashi Fuke, Yuji Tashiro, Toshiaki Nonaka, Yasuaki Tanaka
  • Publication number: 20140335448
    Abstract: [Object] To provide a photosensitive siloxane resin composition excellent in alkali-solubility and in sensitivity, and also to provide a pattern-formation method employing that. [Means] The present invention provides a photosensitive siloxane resin composition comprising: a siloxane resin having silanol groups or alkoxysilyl groups, a crown ether, a photosensitive material, and an organic solvent. This photosensitive composition is cast on a substrate, subjected to imagewise exposure, treated with an alkali aqueous solution, and cured to form a pattern.
    Type: Application
    Filed: May 17, 2012
    Publication date: November 13, 2014
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Takashi Sekito, Daishi Yokoyama, Takashi Fuke, Yuki Tashiro, Toshiaki Nonaka, Yasuaki Tanaka
  • Publication number: 20140335452
    Abstract: A positive photosensitive siloxane composition comprising at least three types of following polysiloxanes (A), (B) and (C) obtained by hydrolyzing and condensing a silane compound represented by general formula (1) R1nSi (OR2)4-n, a diazonaphthoquinone derivative, and a solvent: a polysiloxane (A) such that if pre-baked the film thereof will be soluble in a 5 weight % TMAH aqueous solution and the solution rate of said film will be 1,000 ?/sec or less; a polysiloxane (B) such that if pre-baked the solution rate of the film thereof will be 4,000 ?/sec or more relative to a 2.38 weight % TMAH aqueous solution; and a polysiloxane (C) such that if pre-baked the solution rate of the film thereof will be between 200 and 3,000 ?/sec relative to a 2.38 weight % TMAH aqueous solution.
    Type: Application
    Filed: May 15, 2012
    Publication date: November 13, 2014
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Daishi Yokoyama, Takashi Fuke, Yuji Tashiro, Takashi Sekito, Toshiaki Nonaka
  • Patent number: 8883397
    Abstract: A positive photosensitive siloxane composition containing: a polysiloxane (Ia), which is obtained by hydrolyzing and condensing the silane compound represented by RSi(OR1)3 in general formula (1) and the silane compound represented by Si(OR1)4 in general formula (2) in the presence of a basic catalyst, and a pre-baked film of which has a dissolution rate of 1,000 ?/second or less in a 5 wt % TMAH aqueous solution; a polysiloxane (Ib), which is obtained by hydrolyzing and condensing at least the silane compound represented by general formula (1) in the presence of an acid or basic catalyst, and a pre-baked film of which has a dissolution rate of 100 ?/second or more in a 2.38 wt % TMAH aqueous solution; and a diazonaphthoquinone derivative and solvent.
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: November 11, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Daishi Yokoyama, Takashi Fuke, Yuji Tashiro, Takashi Sekito, Toshiaki Nonaka
  • Publication number: 20140024758
    Abstract: [Object] To provide a coating composition excellent in coatability and free from viscosity increase caused by degradation over time, and also to provide a hardened film-formation method employing that. [Means] The present invention provides a coating composition comprising: a siloxane resin having silanol groups or alkoxysilyl groups, and a polyol having hydroxyl groups at both ends of a straight 2 to 5 carbon atom hydrocarbon chain. This coating composition enables to form a hardened film of high transparency, of high insulation and of low dielectricity.
    Type: Application
    Filed: April 11, 2012
    Publication date: January 23, 2014
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Takashi Sekito, Daishi Yokoyama, Takashi Fuke, Yuji Tashiro, Toshiaki Nonaka, Yasuaki Tanaka