Abstract: A heat exchanger includes a tubular refrigerant distributor having insertion holes spaced from each other in a first direction and into which ends of heat transfer tubes are inserted in a second direction. A first partition plate partitions the refrigerant distributor into a first space into which the ends of the heat transfer tubes are inserted and a second space, larger than the first space, into which the ends of the heat transfer tubes are not inserted; and an inflow pipe provided on a one side-surface side of the refrigerant distributor. The heat transfer tubes are located apart from the first partition plate in the first space. The first partition plate is provided with an orifice that is provided at a location corresponding to a space between adjacent ones of the heat transfer tubes, and that causes the first space and the second space to communicate with each other.

Abstract: A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

Abstract: A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

Abstract: A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

Abstract: A sintered material made of an iron-based alloy is provided, wherein a content of Ni is more than 0.2 mass % and 10 mass % or less in an entire iron-based alloy; a content of C is more than 0 mass % and 2.0 mass % or less in the entire iron-based alloy; at least one element selected from Mo, Mn, Cr B and Si is more than 0 mass % and 5.0 mass % or less in total in the entire iron-based alloy; and a rest of the iron-based alloy is Fe and incidental impurities. A content of Ni in a local region of the iron-based alloy is more than 0.2 mass % and less than 21 mass %. A relative density is 97% or more.

Abstract: A semiconductor device 1 which comprises a pair of an ohmic electrode 20 and a Schottky electrode 10 separated from each other, and a semiconductor layer 30 in contact with the ohmic electrode 20 and the Schottky electrode 10, and which satisfies the following formula (I): n < ? ? ? V e qL 2 ( I ) in which n is a carrier concentration (cm?3) of the semiconductor layer, ? is a dielectric constant (F/cm) of the semiconductor layer, Ve is a forward effective voltage (V) between the ohmic electrode and the Schottky electrode, q is an elementary charge (C), and L is a distance (cm) between the ohmic electrode and the Schottky electrode.

Abstract: A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

Abstract: A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.

Abstract: A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.

Abstract: A semiconductor device 1 which comprises a pair of an ohmic electrode 20 and a Schottky electrode 10 separated from each other, and a semiconductor layer 30 in contact with the ohmic electrode 20 and the Schottky electrode 10, and which satisfies the following formula (I): n < ? ? ? V e qL 2 ( I ) in which n is a carrier concentration (cm?3) of the semiconductor layer, ? is a dielectric constant (F/cm) of the semiconductor layer, Ve is a forward effective voltage (V) between the ohmic electrode and the Schottky electrode, q is an elementary charge (C), and L is a distance (cm) between the ohmic electrode and the Schottky electrode.

Abstract: To provide an electromagnetic-wave transmitting cover which can achieve range extension and angle widening of a sensing radar and is excellent in design property. An electromagnetic-wave transmitting cover of the invention includes a base material made of an electromagnetic-wave-transmissive material, a light-transmitting base material formed on a surface of the base material and made of a light-transmissive material, and a design layer disposed between the base material and the light-transmitting base material, the electromagnetic-wave transmitting cover transmitting an electromagnetic wave, the electromagnetic-wave transmitting cover has an electromagnetic-wave transmitting area which transmits the electromagnetic wave, the base material and the light-transmitting base material in the electromagnetic-wave transmitting area has an interval of 0.

Abstract: To provide an electromagnetic-wave transmitting cover which can achieve range extension and angle widening of a sensing radar and is excellent in design property. An electromagnetic-wave transmitting cover of the invention includes a base material made of an electromagnetic-wave-transmissive material, a light-transmitting base material formed on a surface of the base material and made of a light-transmissive material, and a design layer disposed between the base material and the light-transmitting base material, the electromagnetic-wave transmitting cover transmitting an electromagnetic wave, the electromagnetic-wave transmitting cover has an electromagnetic-wave transmitting area which transmits the electromagnetic wave, the base material and the light-transmitting base material in the electromagnetic-wave transmitting area has an interval of 0.

Abstract: A process for producing a chemical product comprises a first fermentation step wherein fermentation is conducted by supplying a starting material compound and oxygen to a microorganism-containing liquid, to obtain a first fermentation broth containing a chemical product formed by the fermentation, a second fermentation step wherein the first fermentation broth is taken out and used as a second fermentation broth, and fermentation is conducted by supplying oxygen without supplying a starting material compound, so that the concentration of the starting material compound in the second fermentation broth is adjusted to be a concentration (Y) lower than a concentration (X) of the starting material compound in the first fermentation broth, and a separation step wherein the second fermentation broth is separated to obtain a separated liquid containing the chemical product.

Abstract: A bottom-contact type organic thin film transistor comprising at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer, on a substrate, wherein at least one of the source electrode and the drain electrode has a multilayer structure formed by stacking an oxide layer and a metal layer, and the metal layer is surface-modified with an organic thin film layer.

Abstract: In a four-way valve having a simple structure, even if a high-temperature refrigerant and a low-temperature refrigerant flow close to each other, heat loss between both refrigerants is suppressed. The valve comprises a housing member including a valve chamber, a valve seat including a bearing surface portion located in the valve chamber, a first channel through which a high-temperature fluid flows and a second channel through which a low-temperature fluid flows at a predetermined time, including openings adjacent to each other at a bearing surface portion of the valve seat, passing through the valve seat and extending outside of the valve chamber, and a valve element moving to the bearing surface portion of the valve seat. A thermal resistor portion suppressing heat transfer between these channels is located near the openings, between the first and second channels.

Abstract: The present invention is used for a printing target having a non-flat surface portion in at least a portion of a printing surface. To form a decorative printing film on the printing surface of a base material, ink droplets of the same color as the color of the printing film are ejected from nozzles of an inkjet printer onto the printing surface. The distance from the nozzles to the printing surface is represented by X (mm). The droplet amount of the ink is represented by Y (pl). When the maximum value of the distance X is greater than 5 mm, the droplets are ejected from the nozzles each by an amount greater than the droplet amount Y represented by the equation: Y=0.9X1.5.

Abstract: The present invention is used for a printing target having a non-flat surface portion in at least a portion of a printing surface. To form a decorative printing film on the printing surface of a base material, ink droplets of the same color as the color of the printing film are ejected from nozzles of an inkjet printer onto the printing surface. The distance from the nozzles to the printing surface is represented by X (mm). The droplet amount of the ink is represented by Y (pl). When the maximum value of the distance X is greater than 5 mm, the droplets are ejected from the nozzles each by an amount greater than the droplet amount Y represented by the equation: Y=0.9X1.5.

Abstract: A fluorescence conversion medium comprising, a fluorescent fine particle formed of an inorganic nanocrystal which absorbs visible and/or near ultraviolet light and emits visible fluorescence, and a transparent medium which disperses the fluorescent fine particle therein, an absorbance at a wavelength where the fluorescent intensity is maximized being in the range of 0.1 to 1.

Abstract: In a four-way valve having a simple structure, even if a high-temperature refrigerant and a low-temperature refrigerant flow close to each other, heat loss between both refrigerants is suppressed. The valve comprises a housing member including a valve chamber, a valve seat including a bearing surface portion located in the valve chamber, a first channel through which a high-temperature fluid flows and a second channel through which a low-temperature fluid flows at a predetermined time, including openings adjacent to each other at a bearing surface portion of the valve seat, passing through the valve seat and extending outside of the valve chamber, and a valve element moving to the bearing surface portion of the valve seat. A thermal resistor portion suppressing heat transfer between these channels is located near the openings, between the first and second channels.

Abstract: A bottom-contact type organic thin film transistor comprising at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer, on a substrate, wherein at least one of the source electrode and the drain electrode has a multilayer structure formed by stacking an oxide layer and a metal layer, and the metal layer is surface-modified with an organic thin film layer.