Abstract: A method of forming an Al—Zn—Si—Mg alloy coating on a steel strip includes dipping steel strip into a bath of molten Al—Zn—Si—Mg alloy and forming a coating of the alloy on exposed surfaces of the steel strip. The method also includes controlling conditions in the molten coating bath and downstream of the coating bath so that there is a uniform Al/Zn ratio across the surface of the coating formed on the steel strip. An Al—Zn—Mg—Si coated steel strip includes a uniform Al/Zn ratio on the surface or the outermost 1-2 ?m of the Al—Zn—Si—Mg alloy coating.

Abstract: Provided is an image processing apparatus including: a part storage unit which, among a plurality of parts obtained by dividing an icon included in a display image, stores end parts corresponding to ends of the icon and a plurality of repetition parts included in the divided icon; a correspondence information storage unit which stores correspondence information in which the icon, and the end parts and the repetition parts of the icon and the repeated number of the repetition parts correspond to each other; and a generation control unit which specifies the end parts and the repetition parts corresponding to the icon included in a generated image using the correspondence information stored in the correspondence information storage unit if an image generation instruction for generating a predetermined display image is acquired, reads the specified parts from the part storage unit, and generates the icon using the read end parts and repetition parts and the repeated number of the repetition parts corresponding to

Abstract: A GaAs single crystal is disclosed containing at least one impurity selected from the group consisting of In, Al, C and S, in which fluctuation of the concentration of the impurity is less that 20% throughout the crystal from which wafers having uniform characteristics can be produced, and which may be prepared by a process comprising, at a high temperature and under high pressure, pulling up the single crystal from a raw material melt containing simple substances Ga and As or GaAs compound as well as at least one impurity while controlling the concentration of As so as to keep a distribution coefficient of the impurity in GaAs within 1.+-.0.1.

Abstract: Gallium phosphide single crystals with low defect density which are manufactured by the liquid encapsulation Czochralski pulling method and which are characterized in that they are doped or not doped with at least one kind of dopant which is electrically active in gallium phosphide and are so doped as to have at least one dopant such as boron or some other strongly reducing impurity which has a reducing activity equal to or greater than that of boron remain in the crystals in a quantity not less than 1.times.10.sup.17 cm.sup.-3 and the sum of dislocation etch pit density and small conical etch pit density of the surface (111)B which has been subjected to etching for 3 to 5 minutes with RC etchant at a temperature of 65.degree. C..about.75.degree. C. after removing the mechanically damaged layer on the surface does not exceed 1.times.10.sup.5 cm.sup.-2, and a method of manufacturing the crystals.

Abstract: A plurality of single-crystal epitaxial layers of semiconductors are simultaneously grown on a plurality of suitable substrates from the liquid phase by a method which includes the step of consecutively, and at times simultaneously, supplying small portions of liquid solution from a solution reservoir onto all the surfaces of the substrates in a plurality of wells which are provided on a surface of a rotatable circular lower plate so that epitaxial growth can be simultaneously carried out in all wells. The solution reservoir is positioned on a radius of the lower plate on which a circular upper plate is also provided in a non-rotatable state relative to the solution reservoir. Small portions of liquid solution are supplied by rotating the lower plate relative to the upper plate and the solution reservoir, and constrained in shape and volume which are adjusted by the upper plate and the wells. The composition and doping level of epitaxial layers are controlled through vapor-liquid communication.