Patents by Inventor Takashi Soga

Takashi Soga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210013842
    Abstract: A bias circuit includes first to fourth transistors and a phase compensation circuit. In the first transistor, a reference current or voltage is supplied to a first terminal, and the first terminal and a second terminal are connected. In the second transistor, a first terminal is connected to the first transistor, and a third terminal is grounded. In the third transistor, a power supply voltage is supplied to a first terminal, a second terminal is connected to the first transistor, and a bias current or voltage is supplied from a third terminal to an amplifier transistor. In the fourth transistor, a first terminal is connected to the third transistor, a second terminal is connected to the second transistor, and a third terminal is grounded. The phase compensation circuit is provided in a path extending from the fourth transistor to the third transistor through the second and first transistors.
    Type: Application
    Filed: July 10, 2020
    Publication date: January 14, 2021
    Inventor: Takashi SOGA
  • Publication number: 20200412304
    Abstract: A power amplifier circuit includes an amplifier transistor that amplifies an input signal, a resistance element coupled in series with the base of the amplifier transistor, a bias transistor that supplies a bias current from the emitter or the source of the bias transistor to the base of the amplifier transistor through the resistance element, and a feedback circuit that changes a base or gate voltage of the bias transistor to follow a change in the bias current supplied to the base of the amplifier transistor.
    Type: Application
    Filed: June 26, 2020
    Publication date: December 31, 2020
    Inventor: Takashi SOGA
  • Publication number: 20200266763
    Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.
    Type: Application
    Filed: May 5, 2020
    Publication date: August 20, 2020
    Inventor: Takashi SOGA
  • Patent number: 10680555
    Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: June 9, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Takashi Soga
  • Publication number: 20190326857
    Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
    Type: Application
    Filed: July 1, 2019
    Publication date: October 24, 2019
    Inventors: SATOSHI TANAKA, MASATOSHI HASE, YURI HONDA, KAZUO WATANABE, TAKASHI SOGA
  • Publication number: 20190309063
    Abstract: Described herein are novel anti-human Ig? antibodies, as well as methods for making the antibodies and using the antibodies to treat or prevent autoimmune disease.
    Type: Application
    Filed: April 23, 2019
    Publication date: October 10, 2019
    Applicant: Astellas Pharma Inc.
    Inventors: Daisuke YAMAJUKU, Mutsumi SEKI, Takashi HONDA, Satoshi KUBO, Shinji SOGA, Akifumi MORINAKA
  • Patent number: 10389307
    Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: August 20, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Satoshi Tanaka, Masatoshi Hase, Yuri Honda, Kazuo Watanabe, Takashi Soga
  • Publication number: 20190181699
    Abstract: A stator includes a main yoke having a cylindrical shape with a bottom, an auxiliary yoke having a band shape arranged on an outer or inner circumferential wall surface of this main yoke, and a field magnet arranged inside the main yoke. The auxiliary yoke is arranged along a circumferential direction on the outer or inner circumferential wall surface of the main yoke. One end of the auxiliary yoke has at least one protrusion, and another end of the auxiliary yoke has at least one recess facing and engaging in a circumferential direction with the protrusion either on the inner or outer circumferential wall surface of the main yoke.
    Type: Application
    Filed: February 14, 2019
    Publication date: June 13, 2019
    Inventors: Tsuyoshi MATSUDA, Kazuhiro MIURA, Yuuya ASAI, Takashi NAGAYA, Takumi OKANO, Isoshi SOGA, Kazuya NAGASAKA
  • Patent number: 10316086
    Abstract: [Problem] Provided is an anti-human Ig? antibody which crosslinks BCR and Fc?RIIb and has an immunosuppressive function more enhanced than that of an antibody in the prior art. [Means for Solution] An anti-human Ig? antibody comprising a heavy chain variable region comprising CDR1 consisting of the amino acid sequence of amino acid numbers 31 to 35 of SEQ ID NO: 2, CDR2 consisting of the amino acid sequence of amino acid numbers 50 to 65 of SEQ ID NO: 2, and CDR3 consisting of the amino acid sequence of amino acid numbers 98 to 108 of SEQ ID NO: 2, a light chain variable region comprising CDR1 consisting of the amino acid sequence of amino acid numbers 24 to 38 of SEQ ID NO: 4, CDR2 consisting of the amino acid sequence of amino acid numbers 54 to 60 of SEQ ID NO: 4, and CDR3 consisting of the amino acid sequence of amino acid numbers 93 to 101 of SEQ ID NO: 4, and a heavy chain constant region which is a human Ig?1 constant region having amino acid mutations of S239D, H268D, and L328W.
    Type: Grant
    Filed: August 5, 2015
    Date of Patent: June 11, 2019
    Assignee: ASTELLAS PHARMA INC.
    Inventors: Daisuke Yamajuku, Mutsumi Seki, Takashi Honda, Satoshi Kubo, Shinji Soga, Akifumi Morinaka
  • Publication number: 20190103847
    Abstract: A power amplifier circuit includes a first transistor that amplifies a first signal and outputs a second signal, a second transistor that amplifies a signal corresponding to the second signal and outputs a third signal, a third transistor that supplies a first bias current or voltage to a base of the first transistor, and a fourth transistor that supplies a second bias current or voltage to a base of the second transistor. A ratio of an emitter area of the third transistor to an emitter area of the first transistor is larger than a ratio of an emitter area of the fourth transistor to an emitter area of the second transistor.
    Type: Application
    Filed: October 3, 2018
    Publication date: April 4, 2019
    Inventor: Takashi Soga
  • Publication number: 20190074796
    Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.
    Type: Application
    Filed: November 1, 2018
    Publication date: March 7, 2019
    Inventor: Takashi SOGA
  • Patent number: 10148226
    Abstract: A bias circuit includes first to fourth bipolar transistors and a filter circuit. The third bipolar transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: December 4, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Takashi Soga
  • Patent number: 10135395
    Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: November 20, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Satoshi Tanaka, Masatoshi Hase, Yuri Honda, Kazuo Watanabe, Takashi Soga
  • Publication number: 20180294788
    Abstract: Provided is a power amplification module that includes: an amplification transistor that has a constant power supply voltage supplied to a collector thereof, a bias current supplied to a base thereof and that amplifies an input signal input to the base thereof and outputs an amplified signal from the collector thereof; a first current source that outputs a first current that corresponds to a level control voltage that is for controlling a signal level of the amplified signal; and a bias transistor that has the first current supplied to a collector thereof, a bias control voltage connected to a base thereof and that outputs the bias current from an emitter thereof.
    Type: Application
    Filed: June 13, 2018
    Publication date: October 11, 2018
    Inventors: Shota Ishihara, Yusuke Shimamune, Takashi Soga, Fuminori Morisawa, Seiko Ono, Tetsuaki Adachi
  • Publication number: 20180287562
    Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
    Type: Application
    Filed: June 6, 2018
    Publication date: October 4, 2018
    Inventors: Satoshi Tanaka, Masatoshi Hase, Yuri Honda, Kazuo Watanabe, Takashi Soga
  • Patent number: 10020786
    Abstract: Provided is a power amplification module that includes: an amplification transistor that has a constant power supply voltage supplied to a collector thereof, a bias current supplied to a base thereof and that amplifies an input signal input to the base thereof and outputs an amplified signal from the collector thereof; a first current source that outputs a first current that corresponds to a level control voltage that is for controlling a signal level of the amplified signal; and a bias transistor that has the first current supplied to a collector thereof, a bias control voltage connected to a base thereof and that outputs the bias current from an emitter thereof.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: July 10, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Shota Ishihara, Yusuke Shimamune, Takashi Soga, Fuminori Morisawa, Seiko Ono, Tetsuaki Adachi
  • Publication number: 20180167035
    Abstract: A bias circuit includes first to fourth bipolar transistors and a filter circuit. The third bipolar transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.
    Type: Application
    Filed: December 7, 2017
    Publication date: June 14, 2018
    Inventor: Takashi Soga
  • Publication number: 20180152143
    Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
    Type: Application
    Filed: November 22, 2017
    Publication date: May 31, 2018
    Inventors: Satoshi Tanaka, Masatoshi Hase, Yuri Honda, Kazuo Watanabe, Takashi Soga
  • Publication number: 20170019082
    Abstract: Provided is a power amplification module that includes: an amplification transistor that has a constant power supply voltage supplied to a collector thereof, a bias current supplied to a base thereof and that amplifies an input signal input to the base thereof and outputs an amplified signal from the collector thereof; a first current source that outputs a first current that corresponds to a level control voltage that is for controlling a signal level of the amplified signal; and a bias transistor that has the first current supplied to a collector thereof, a bias control voltage connected to a base thereof and that outputs the bias current from an emitter thereof.
    Type: Application
    Filed: July 5, 2016
    Publication date: January 19, 2017
    Inventors: Shota Ishihara, Yusuke Shimamune, Takashi Soga, Fuminori Morisawa, Seiko Ono, Tetsuaki Adachi
  • Patent number: 9240760
    Abstract: A power amplifier module includes a first amplification transistor that amplifies and outputs a radio frequency signal, a second amplification transistor that is connected in parallel to the first amplification transistor and that has a smaller size than the first amplification transistor, a bias circuit that supplies a bias voltage or a bias current to the first and second amplification transistors, a current detector circuit that detects a current flowing in the second amplification transistor, and a bias control circuit that controls the bias voltage or the bias current supplied from the bias circuit to the first and second amplification transistors depending on the detection result of the current detector circuit.
    Type: Grant
    Filed: November 13, 2014
    Date of Patent: January 19, 2016
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Kazuhiko Ishimoto, Takashi Soga