Patents by Inventor Takashi Soga
Takashi Soga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11936044Abstract: A carbon material for a non-aqueous secondary battery containing a graphite capable of occluding and releasing lithium ions, and having a cumulative pore volume at pore diameters in a range of 0.01 ?m to 1 ?m of 0.08 mL/g or more, a roundness, as determined by flow-type particle image analysis, of 0.88 or greater, and a pore diameter to particle diameter ratio (PD/d50 (%)) of 1.8 or less, the ratio being given by equation (1A): PD/d50 (%)=mode pore diameter (PD) in a pore diameter range of 0.01 ?m to 1 ?m in a pore distribution determined by mercury intrusion/volume-based average particle diameter (d50)×100 is provided.Type: GrantFiled: January 5, 2017Date of Patent: March 19, 2024Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Shunsuke Yamada, Nobuyuki Ishiwatari, Satoshi Akasaka, Daigo Nagayama, Shingo Morokuma, Koichi Nishio, Iwao Soga, Hideaki Tanaka, Takashi Kameda, Tooru Fuse, Hiromitsu Ikeda
-
Publication number: 20240088850Abstract: A transmission circuit appropriately controls output power in response to fluctuations in the impedance of a load. A transmission circuit includes: a transistor to which a bias current IB1 is supplied and that amplifies and outputs an input signal RFin; a transistor to which a bias current IB2 is supplied, that has a collector connected to the collector of the transistor, and that amplifies and outputs the input signal; a current generation circuit that generates a current I2 on the basis of a current I1 from the emitter of the transistor; and a bias control circuit that outputs a first bias control signal for controlling the bias current IB1 and a second bias control signal for controlling the bias current IB2 on the basis of the current I2.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Inventors: Masatoshi HASE, Tsutomu OONARO, Takashi SOGA
-
Publication number: 20240030877Abstract: A power amplifier circuit includes a first transistor having a base supplied with a bias current, configured to amplify an input signal and to output a first current, a second transistor having an emitter connected to the base of the first transistor, configured to supply the bias current from the emitter to the base of the first transistor, a third transistor connected to a base of the second transistor, a comparison voltage generation circuit, configured to generate a comparison voltage based on a second current flowing through the third transistor, and a comparison circuit connected to the base of the second transistor, to which the comparison voltage and a reference voltage are supplied, configured to decrease a third current supplied to the base of the second transistor as the second current increases based on the comparison voltage and the reference voltage.Type: ApplicationFiled: July 21, 2023Publication date: January 25, 2024Inventor: Takashi SOGA
-
Patent number: 11855587Abstract: A power amplifier circuit includes an amplifier transistor that amplifies an input signal, a resistance element coupled in series with the base of the amplifier transistor, a bias transistor that supplies a bias current from the emitter or the source of the bias transistor to the base of the amplifier transistor through the resistance element, and a feedback circuit that changes a base or gate voltage of the bias transistor to follow a change in the bias current supplied to the base of the amplifier transistor.Type: GrantFiled: June 26, 2020Date of Patent: December 26, 2023Assignee: MURATA MANUFACTURING CO., LTD.Inventor: Takashi Soga
-
Publication number: 20220416728Abstract: A power amplifier circuit includes: a transistor which is supplied at a base with a bias current, amplifies an input signal, and outputs a current; a transistor which is connected at a base to the base of the transistor and in which a current commensurate with the current is input to a collector; a transistor which outputs a bias control signal which controls supply of the bias current; and a control circuit which is connected to the collector of the transistor and a gate of the transistor and controls a bias control signal on the basis of a reference current based on a reference signal and the current.Type: ApplicationFiled: June 24, 2022Publication date: December 29, 2022Inventors: Takashi SOGA, Tsutomu OONARO
-
Patent number: 11489497Abstract: A bias circuit includes first to fourth transistors and a phase compensation circuit. In the first transistor, a reference current or voltage is supplied to a first terminal, and the first terminal and a second terminal are connected. In the second transistor, a first terminal is connected to the first transistor, and a third terminal is grounded. In the third transistor, a power supply voltage is supplied to a first terminal, a second terminal is connected to the first transistor, and a bias current or voltage is supplied from a third terminal to an amplifier transistor. In the fourth transistor, a first terminal is connected to the third transistor, a second terminal is connected to the second transistor, and a third terminal is grounded. The phase compensation circuit is provided in a path extending from the fourth transistor to the third transistor through the second and first transistors.Type: GrantFiled: July 10, 2020Date of Patent: November 1, 2022Assignee: MURATA MANUFACTURING CO., LTD.Inventor: Takashi Soga
-
Patent number: 11398805Abstract: Provided is a power amplification module that includes: an amplification transistor that has a constant power supply voltage supplied to a collector thereof, a bias current supplied to a base thereof and that amplifies an input signal input to the base thereof and outputs an amplified signal from the collector thereof; a first current source that outputs a first current that corresponds to a level control voltage that is for controlling a signal level of the amplified signal; and a bias transistor that has the first current supplied to a collector thereof, a bias control voltage connected to a base thereof and that outputs the bias current from an emitter thereof.Type: GrantFiled: June 13, 2018Date of Patent: July 26, 2022Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Shota Ishihara, Yusuke Shimamune, Takashi Soga, Fuminori Morisawa, Seiko Ono, Tetsuaki Adachi
-
Patent number: 11290060Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.Type: GrantFiled: January 5, 2021Date of Patent: March 29, 2022Assignee: MURATA MANUFACTURING CO., LTD.Inventor: Takashi Soga
-
Patent number: 11258406Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.Type: GrantFiled: July 1, 2019Date of Patent: February 22, 2022Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Satoshi Tanaka, Masatoshi Hase, Yuri Honda, Kazuo Watanabe, Takashi Soga
-
Patent number: 10998871Abstract: A power amplifier circuit includes a first transistor that amplifies a first signal and outputs a second signal, a second transistor that amplifies a signal corresponding to the second signal and outputs a third signal, a third transistor that supplies a first bias current or voltage to a base of the first transistor, and a fourth transistor that supplies a second bias current or voltage to a base of the second transistor. A ratio of an emitter area of the third transistor to an emitter area of the first transistor is larger than a ratio of an emitter area of the fourth transistor to an emitter area of the second transistor.Type: GrantFiled: October 3, 2018Date of Patent: May 4, 2021Assignee: MURATA MANUFACTURING CO., LTD.Inventor: Takashi Soga
-
Publication number: 20210126586Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.Type: ApplicationFiled: January 5, 2021Publication date: April 29, 2021Inventor: Takashi SOGA
-
Patent number: 10910999Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.Type: GrantFiled: May 5, 2020Date of Patent: February 2, 2021Assignee: Murata Manufacturing Co., Ltd.Inventor: Takashi Soga
-
Publication number: 20210013842Abstract: A bias circuit includes first to fourth transistors and a phase compensation circuit. In the first transistor, a reference current or voltage is supplied to a first terminal, and the first terminal and a second terminal are connected. In the second transistor, a first terminal is connected to the first transistor, and a third terminal is grounded. In the third transistor, a power supply voltage is supplied to a first terminal, a second terminal is connected to the first transistor, and a bias current or voltage is supplied from a third terminal to an amplifier transistor. In the fourth transistor, a first terminal is connected to the third transistor, a second terminal is connected to the second transistor, and a third terminal is grounded. The phase compensation circuit is provided in a path extending from the fourth transistor to the third transistor through the second and first transistors.Type: ApplicationFiled: July 10, 2020Publication date: January 14, 2021Inventor: Takashi SOGA
-
Publication number: 20200412304Abstract: A power amplifier circuit includes an amplifier transistor that amplifies an input signal, a resistance element coupled in series with the base of the amplifier transistor, a bias transistor that supplies a bias current from the emitter or the source of the bias transistor to the base of the amplifier transistor through the resistance element, and a feedback circuit that changes a base or gate voltage of the bias transistor to follow a change in the bias current supplied to the base of the amplifier transistor.Type: ApplicationFiled: June 26, 2020Publication date: December 31, 2020Inventor: Takashi SOGA
-
Publication number: 20200266763Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.Type: ApplicationFiled: May 5, 2020Publication date: August 20, 2020Inventor: Takashi SOGA
-
Patent number: 10680555Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.Type: GrantFiled: November 1, 2018Date of Patent: June 9, 2020Assignee: MURATA MANUFACTURING CO., LTD.Inventor: Takashi Soga
-
Publication number: 20190326857Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.Type: ApplicationFiled: July 1, 2019Publication date: October 24, 2019Inventors: SATOSHI TANAKA, MASATOSHI HASE, YURI HONDA, KAZUO WATANABE, TAKASHI SOGA
-
Patent number: 10389307Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.Type: GrantFiled: June 6, 2018Date of Patent: August 20, 2019Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Satoshi Tanaka, Masatoshi Hase, Yuri Honda, Kazuo Watanabe, Takashi Soga
-
Publication number: 20190103847Abstract: A power amplifier circuit includes a first transistor that amplifies a first signal and outputs a second signal, a second transistor that amplifies a signal corresponding to the second signal and outputs a third signal, a third transistor that supplies a first bias current or voltage to a base of the first transistor, and a fourth transistor that supplies a second bias current or voltage to a base of the second transistor. A ratio of an emitter area of the third transistor to an emitter area of the first transistor is larger than a ratio of an emitter area of the fourth transistor to an emitter area of the second transistor.Type: ApplicationFiled: October 3, 2018Publication date: April 4, 2019Inventor: Takashi Soga
-
Publication number: 20190074796Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.Type: ApplicationFiled: November 1, 2018Publication date: March 7, 2019Inventor: Takashi SOGA