Patents by Inventor Takashi SONOHATA

Takashi SONOHATA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9982335
    Abstract: A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy is provided, the method including: a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; and a cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the cylindrical ingot, to form the cylindrical sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 ?m to 150 ?m and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: May 29, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Akira Sakurai, Satoshi Kumagai, Takashi Sonohata, Michiaki Ohto
  • Publication number: 20160312335
    Abstract: In a method for manufacturing a Ca-containing copper alloy, a Ca addition step of adding Ca to molten copper is provided, and, in the Ca addition step, a copper-coated Ca material (20) obtained by coating a surface of a metallic Ca (21) with copper (22) is used. In the copper-coated Ca material (20), an oxygen content in the copper (22) that coats the metallic Ca (21) is preferably set to less than 100 ppm by mass.
    Type: Application
    Filed: December 8, 2014
    Publication date: October 27, 2016
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Satoshi KUMAGAI, Takashi SONOHATA, Michiaki OHTO
  • Publication number: 20160194749
    Abstract: A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy is provided, the method including: a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; and a cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the cylindrical ingot, to form the cylindrical sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 ?m to 150 ?m and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area.
    Type: Application
    Filed: February 20, 2015
    Publication date: July 7, 2016
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Akira SAKURAI, Satoshi KUMAGAI, Takashi SONOHATA, Michiaki OHTO