Abstract: A solar cell module includes a solar cell string in which a first solar cell and a second solar cell are arranged apart from each other along a first direction. The first and second solar cells are connected by a strip-shaped wiring member, and the solar cell string is arranged between a light-receiving-surface protection member and a back-surface protection member. The wiring member has, along the first direction, an uneven region where the first principal surface is provided with unevenness, and a flat region where the first principal surface is not provided with unevenness or is provided with unevenness that is smaller in height than the uneven region. The uneven region extends from the light-receiving surface of the second solar cell to the back surface of the first solar cell.

Abstract: A sample-holding device for holding and lifting a sample includes a sample-holding surface facing the sample; and a positioning member provided at a peripheral part of the sample-holding surface, the positioning member comprising a contact part having an outward-facing part on a back side thereof; a first rounded or chamfered end; and a second rounded or chamfered end, wherein the contact part contacts with part of the sample when the sample is held or when the sample is off-point, wherein the first end is an end of a section comprising the contact part or a part smoothly continuing from the contact part, the end being on a distant side from the sample-holding surface, and the second end is an end of the outward-facing part, the end being located on a tipping side of the outward-facing part.

Abstract: The method for manufacturing a crystalline silicon substrate for a solar cell includes: forming a texture on the surface of a single-crystalline silicon substrate by bringing an alkali solution and the surface of the single-crystalline silicon substrate into contact with each other; bringing an acidic solution and the surface of the single-crystalline silicon substrate into contact with each other to perform an acid treatment thereon; and then by bringing ozone water and the surface of the single-crystalline silicon substrate into contact with each other to perform an ozone treatment thereon. One aspect of embodiment is that the acidic solution used for the acid treatment is hydrochloric acid. Another aspect of embodiment is that the ozone treatment is performed by immersing the single-crystalline silicon substrate into the ozone water bath.

Abstract: The method for manufacturing a crystalline silicon substrate for a solar cell includes: forming a texture on the surface of a single-crystalline silicon substrate by bringing an alkali solution and the surface of the single-crystalline silicon substrate into contact with each other; bringing an acidic solution and the surface of the single-crystalline silicon substrate into contact with each other to perform an acid treatment thereon; and then by bringing ozone water and the surface of the single-crystalline silicon substrate into contact with each other to perform an ozone treatment thereon. One aspect of embodiment is that the acidic solution used for the acid treatment is hydrochloric acid. Another aspect of embodiment is that the ozone treatment is performed by immersing the single-crystalline silicon substrate into the ozone water bath.

Abstract: A sample-holding device for holding and lifting a sample includes a sample-holding surface facing the sample; and a positioning member provided at a peripheral part of the sample-holding surface, the positioning member comprising a contact part having an outward-facing part on a back side thereof; a first rounded or chamfered end; and a second rounded or chamfered end, wherein the contact part contacts with part of the sample when the sample is held or when the sample is off-point, wherein the first end is an end of a section comprising the contact part or a part smoothly continuing from the contact part, the end being on a distant side from the sample-holding surface, and the second end is an end of the outward-facing part, the end being located on a tipping side of the outward-facing part.

Abstract: The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit stacked thereon or vice versa, an amorphous photoelectric conversion layer included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 ?m and less than 0.17 ?m, a crystalline photoelectric conversion layer included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 ?m and less than 1.0 ?m, and a silicon oxide layer of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.

Abstract: A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area.

Abstract: The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit stacked thereon or vice versa, an amorphous photoelectric conversion layer included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 ?m and less than 0.17 ?m, a crystalline photoelectric conversion layer included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 ?m and less than 1.0 ?m, and a silicon oxide layer of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.

Abstract: The present invention provides a three-junction thin-film photoelectric converter having high conversion efficiency at low cost by improving the film quality of the crystalline silicon photoelectric conversion layer and improving the light trapping effect. A thin-film photoelectric converter according to the present invention is a three-junction thin-film photoelectric converter and has a structure in which a first amorphous silicon photoelectric conversion unit, a second amorphous silicon photoelectric conversion unit, a reflective intermediate layer, and a crystalline silicon photoelectric conversion unit are stacked in that order from the light incident side, wherein the photoelectric conversion units are disposed on a transparent base having surface unevenness, and the reflective intermediate layer has an unevenness depth that is smaller than that of the base.

Abstract: An object of the present invention is to provide a substrate for a thin film photoelectric conversion device, in which its properties are not deteriorated when its surface unevenness is effectively increased, and then provide the thin film photoelectric conversion device having its performance improved by using the substrate. According to the present invention, by setting the surface area ratio of a transparent electrode layer in the substrate for the thin film photoelectric conversion device to at least 55% and at most 95%, the surface unevenness are effectively increased to increase the optical confinement effect, while deterioration in properties due to sharpening of the surface level variation is suppressed, whereby making it possible to provide a substrate for a thin film photoelectric conversion device, which can enhance output properties of the thin film photoelectric conversion device.

Abstract: It is intended to provide a highly reliable photoelectric converter having a reflective layer, deterioration in output characteristics thereof being suppressed under a constant temperature and humidity environment. The photoelectric converter according to the present invention has at least one thin film silicon-based photoelectric conversion unit mainly composed of a silicon-based thin film including at least one semiconductor junction, characterized in that the photoelectric converter has a silicon alloy layer containing a kind of dopant for determining a conductivity type, oxygen, nitrogen, and crystalline silicon on a side opposite to a light incident side of the thin film silicon-based photoelectric conversion unit, and that the silicon alloy layer has a refractive index of at most 2.5 and a nitrogen concentration in a range of 1×1021 atom/cc to 1 to 1022 atom/cc.

Abstract: A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).

Abstract: A recording and/or reproducing apparatus for recording and/or reproducing signals on and/or from a recording medium includes a recording and/or reproducing portion for recording and/or reproducing signals on and/or from the recording medium, a carrying portion for carrying the recording medium, and first and second sliders. The first slider is movable in one direction for moving the carrying portion together with the recording medium up to a specific withdrawal position. The second slider is movable in a direction being substantially the same as the one direction for moving the recording medium carried by the carrying portion to a recording and/or reproducing position corresponding to a position of the recording and/or reproducing portion. The first slider and the second slider are overlapped to each other in the vertical direction.

Abstract: A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area.

Abstract: A recording and/or reproducing apparatus for recording and/or reproducing signals on and/or from a recording medium includes a recording and/or reproducing portion for recording and/or reproducing signals on and/or from the recording medium, a carrying portion for carrying the recording medium, and first and second sliders. The first slider is movable in one direction for moving the carrying portion together with the recording medium up to a specific withdrawal position. The second slider is movable in a direction being substantially the same as the one direction for moving the recording medium carried by the carrying portion to a recording and/or reproducing position corresponding to a position of the recording and/or reproducing portion. The first slider and the second slider are overlapped to each other in the vertical direction.

Abstract: A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).

Abstract: A recording and/or reproducing apparatus for recording and/or reproducing signals on and/or from a recording medium includes a recording and/or reproducing portion for recording and/or reproducing signals on and/or from the recording medium, a carrying portion for carrying the recording medium, and first and second sliders. The first slider is movable in one direction for moving the carrying portion together with the recording medium up to a specific withdrawal position. The second slider is movable in a direction being substantially the same as the one direction for moving the recording medium carried by the carrying portion to a recording and/or reproducing position corresponding to a position of the recording and/or reproducing portion. The first slider and the second slider are overlapped to each other in the vertical direction.

Abstract: A recording and/or reproducing apparatus for recording and/or reproducing signals on and/or from a recording medium includes a recording and/or reproducing portion for recording and/or reproducing signals on and/or from the recording medium, a carrying portion for carrying the recording medium, and first and second sliders. The first slider is movable in one direction for moving the carrying portion together with the recording medium up to a specific withdrawal position. The second slider is movable in a direction being substantially the same as the one direction for moving the recording medium carried by the carrying portion to a recording and/or reproducing position corresponding to a position of the recording and/or reproducing portion. The first slider and the second slider are overlapped to each other in the vertical direction.

Abstract: In a method of depositing a silicon thin film by using a vertical plasma CVD apparatus having steps of holding a substrate having an area not smaller than 1,200 cm2 and having a conductive film formed thereon with a substrate holder, disposing the substrate to face an electrode, and depositing a silicon thin film under a power density of 100 mW/cm2 or more, the substrate holder is electrically insulated from the conductive film formed on the surface of the substrate by forming a separation groove in the conductive film.

Abstract: A recording and/or reproducing apparatus for recording and/or reproducing signals on and/or from a recording medium includes a recording and/or reproducing portion for recording and/or reproducing signals on and/or from the recording medium, a carrying portion for carrying the recording medium, and first and second sliders. The first slider is movable in one direction for moving the carrying portion together with the recording medium up to a specific withdrawal position. The second slider is movable in a direction being substantially the same as the one direction of the first slider for moving the recording medium carried by the carrying portion to a recording and/or reproducing position corresponding to a position of the recording and/or reproducing portion. The first slider and the second slider are overlapped relative to each other in the vertical direction.