Abstract: There are provided a new type of crystal laminate of an alkaline earth metal titanate having improved catalytic activity, and a method for producing the same. The crystal laminate is provided having a crystal of the alkaline earth metal titanate as a constitutional unit, wherein the crystal being the constitutional unit is a cubic crystal, a tetragonal crystal or an orthorhombic crystal; the crystal being the constitutional unit has a primary particle diameter of 500 nm or less; and the crystal is layered with an orientation in a {100} plane direction thereof.

Abstract: The present invention provides a photodecomposition module and a photodecomposition cell that have a new structure different from a known art and can decompose a decomposition liquid more effectively than those of the known art. The present invention includes a plurality of photodecomposition cells, and a posture holder that holds each of the photodecomposition cells in a predetermined posture, in which each of the photodecomposition cells decomposes a decomposition liquid with light irradiation, and includes an anode electrode part and a cathode electrode part in an accommodating part, the anode electrode part has a photocatalyst supported on a conductive substrate, the anode electrode part and the cathode electrode part are immersed in the decomposition liquid in the accommodating part, and the accommodating part has a cylindrical shape.

Abstract: Photostimulated luminescence, which allows energy or data to be stored and released using electromagnetic waves as both the input and output, has attracted considerable interest in the fields of biomedical and informatics technologies, but this phenomenon is mostly limited to solid inorganic materials. Here, we report photostimulated luminescence from purely organic blend films composed of electron donor, acceptor, and trap/emitter molecules. In the films, charges are accumulated as radical ions by ultraviolet light irradiation and then extracted by near infrared light irradiation to produce visible light. Films are capable of multiple cycles (>10 times) of organic photostimulated luminescence, which was still observable from films left in the dark at room temperature for one week after excitation, and emission color could be varied by changing the trap/emitter molecules. These findings will broadly impact existing applications and provide new prospects for innovative flexible devices.

Abstract: The present invention is to provide a photocatalyst electrode less likely to suffer from peeling of hematite-based crystal particles from a substrate and having higher catalytic activity than ever before. A method for producing a photocatalyst electrode includes: an in-process particle of heating a raw material solution to form in-process particles, the raw material solution including a raw material solvent and a hematite raw material dispersed therein, the in-process particle forming step including heating the raw material solution in a closed vessel for more than 12 hours; and a burning step of burning the in-process particles. In this way, a photocatalyst electrode with high catalytic activity can be produced.

Abstract: A semiconductor memory device comprises: a substrate; gate electrodes arranged in a first direction crossing a surface of the substrate; a first semiconductor layer including a first portion extending in the first direction and facing the plurality of gate electrodes, and, a second portion nearer to the substrate than the first portion; a gate insulating film provided between the gate electrode and the first portion of the first semiconductor layer, and, including a memory portion; and, a wiring portion provided between the substrate and the plurality of gate electrodes, connected to the second portion of the first semiconductor layer, and, extending in a second direction crossing the first direction. The wiring portion comprises a second semiconductor layer connected to the second portion of the first semiconductor layer. The second semiconductor layer includes a first crystal grain larger than a thickness in the first direction of the second semiconductor layer.

Abstract: An image pickup apparatus includes a power supply line, a regulator configured to generate a voltage from a power supply output and output the voltage to a power supply line, a current comparison circuit configured to detect an abnormality of an input current in the regulator, a voltage comparison circuit configured to detect an abnormality of an output voltage in the regulator, a power calculation circuit configured to calculate a power value as a product of the input current and the output voltage, and a power supply line abnormality judgment circuit configured to judge an abnormal state of the power supply line based on the power value, and a power supply control unit configured to control power supply output based on a judgment result of the power supply line abnormality judgment circuit.

Abstract: A memory device according to an embodiment includes a first conductive layer; a second conductive layer; a first metal oxide layer that is provided between the first conductive layer and the second conductive layer and includes at least one first metal element selected from the group consisting of aluminum (Al), gallium (Ga), zirconium (Zr), and hafnium (Hf); and a second metal oxide layer that is provided between the first metal oxide layer and the second conductive layer and includes at least one second metal element selected from the group consisting of zinc (Zn), titanium (Ti), tin (Sn), vanadium (V), niobium (Nb), tantalum (Ta), and tungsten (W). The first metal oxide layer includes a third metal element. The third metal element has a lower valence than a metal element having the highest atomic percent in the first metal oxide layer among the at least one first metal element.

Abstract: There are provided a new type of crystal laminate of an alkaline earth metal titanate having improved catalytic activity, and a method for producing the same. The crystal laminate is provided having a crystal of the alkaline earth metal titanate as a constitutional unit, wherein the crystal being the constitutional unit is a cubic crystal, a tetragonal crystal or an orthorhombic crystal; the crystal being the constitutional unit has a primary particle diameter of 500 nm or less; and the crystal is layered with an orientation in a {100} plane direction thereof.

Abstract: An object of the present invention is to provide a fluorescent probe that easily penetrates a cell and is capable of selectively and efficiently detecting singlet oxygen generated in the cell, a singlet oxygen detection agent containing the fluorescent probe, and a singlet oxygen detection method using the fluorescent probe. The fluorescent probe for detecting singlet oxygen comprises a compound having a silicon-rhodamine skeleton and a skeleton that increases the fluorescence of the fluorescent probe after trapping singlet oxygen to be greater than the fluorescence before trapping singlet oxygen, or a salt, hydrate, or solvate thereof.

Abstract: An image pickup apparatus includes a power supply line, a regulator configured to generate a voltage from a power supply output and output the voltage to a power supply line, a current comparison circuit configured to detect an abnormality of an input current in the regulator, a voltage comparison circuit configured to detect an abnormality of an output voltage in the regulator, a power calculation circuit configured to calculate a power value as a product of the input current and the output voltage, and a power supply line abnormality judgment circuit configured to judge an abnormal state of the power supply line based on the power value, and a power supply control unit configured to control power supply output based on a judgment result of the power supply line abnormality judgment circuit.

Abstract: A semiconductor memory device comprises: a substrate; gate electrodes arranged in a first direction crossing a surface of the substrate; a first semiconductor layer including a first portion extending in the first direction and facing the plurality of gate electrodes, and, a second portion nearer to the substrate than the first portion; a gate insulating film provided between the gate electrode and the first portion of the first semiconductor layer, and, including a memory portion; and, a wiring portion provided between the substrate and the plurality of gate electrodes, connected to the second portion of the first semiconductor layer, and, extending in a second direction crossing the first direction. The wiring portion comprises a second semiconductor layer connected to the second portion of the first semiconductor layer. The second semiconductor layer includes a first crystal grain larger than a thickness in the first direction of the second semiconductor layer.

Abstract: A memory device according to an embodiment includes a first conductive layer; a second conductive layer; a first metal oxide layer that is provided between the first conductive layer and the second conductive layer and includes at least one first metal element selected from the group consisting of aluminum (Al), gallium (Ga), zirconium (Zr), and hafnium (Hf); and a second metal oxide layer that is provided between the first metal oxide layer and the second conductive layer and includes at least one second metal element selected from the group consisting of zinc (Zn), titanium (Ti), tin (Sn), vanadium (V), niobium (Nb), tantalum (Ta), and tungsten (W). The first metal oxide layer includes a third metal element. The third metal element has a lower valence than a metal element having the highest atomic percent in the first metal oxide layer among the at least one first metal element.

Abstract: A memory device according to an embodiment includes a first conductive layer; a second conductive layer; a first metal oxide layer that is provided between the first conductive layer and the second conductive layer and includes at least one first metal element selected from the group consisting of aluminum (Al), gallium (Ga), zirconium (Zr), and hafnium (Hf); and a second metal oxide layer that is provided between the first metal oxide layer and the second conductive layer and includes at least one second metal element selected from the group consisting of zinc (Zn), titanium (Ti), tin (Sn), vanadium (V), niobium (Nb), tantalum (Ta), and tungsten (W). The first metal oxide layer includes a third metal element. The third metal element has a lower valence than a metal element having the highest atomic percent in the first metal oxide layer among the at least one first metal element.

Abstract: A memory device according to an embodiment includes a first conductive layer, a second conductive layer; and a first metal oxide layer provided between the first conductive layer and the second conductive layer. The first metal oxide layer includes titanium oxide, the first metal oxide layer has a first region and a second region, a mole fraction of anatase titanium oxide in the titanium oxide of the first region is a first mole fraction, and a mole fraction of anatase titanium oxide in the titanium oxide of the second region is a second mole fraction lower than the first mole fraction.

Abstract: A memory device according to an embodiment includes a first conductive layer; a second conductive layer; a first metal oxide layer that is provided between the first conductive layer and the second conductive layer and includes at least one first metal element selected from the group consisting of aluminum (Al), gallium (Ga), zirconium (Zr), and hafnium (Hf); and a second metal oxide layer that is provided between the first metal oxide layer and the second conductive layer and includes at least one second metal element selected from the group consisting of zinc (Zn), titanium (Ti), tin (Sn), vanadium (V), niobium (Nb), tantalum (Ta), and tungsten (W). The first metal oxide layer includes a third metal element. The third metal element has a lower valence than a metal element having the highest atomic percent in the first metal oxide layer among the at least one first metal element.

Abstract: A memory device according to an embodiment includes a first conductive layer, a second conductive layer; and a first metal oxide layer provided between the first conductive layer and the second conductive layer. The first metal oxide layer includes titanium oxide, the first metal oxide layer has a first region and a second region, a mole fraction of anatase titanium oxide in the titanium oxide of the first region is a first mole fraction, and a mole fraction of anatase titanium oxide in the titanium oxide of the second region is a second mole fraction lower than the first mole fraction.

Abstract: A semiconductor memory device according to an embodiment includes: a substrate having a surface extending in a first direction and a second direction intersecting the first direction; and a memory cell array disposed above the substrate, the memory cell array having: a first wiring line extending in the first direction; a second wiring line extending in a third direction intersecting the first and second directions; a third wiring line extending in the second direction; a memory cell including a first layer provided in an intersection region of the first wiring line and the second wiring line; and a select transistor including a channel layer provided between the second wiring line and the third wiring line, the first layer of the memory cell including a first material which is an oxide, and the channel layer of the select transistor including the first material.

Abstract: Various metal oxide mesocrystals can be synthesized in a simple manner by a method for producing a metal oxide mesocrystal, the method comprising the step of annealing an aqueous precursor solution comprising one or more metal oxide precursors, an ammonium salt, a surfactant, and water at 300 to 600° C. Composite mesocrystals consisting of a plurality of metal oxides or an alloy oxide can also be provided.

Abstract: Various metal oxide mesocrystals can be synthesized in a simple manner by a method for producing a metal oxide mesocrystal, the method comprising the step of annealing an aqueous precursor solution comprising one or more metal oxide precursors, an ammonium salt, a surfactant, and water at 300 to 600° C. Composite mesocrystals consisting of a plurality of metal oxides or an alloy oxide can also be provided.

Abstract: An object of the present invention is to provide a fluorescent probe that easily penetrates a cell and is capable of selectively and efficiently detecting singlet oxygen generated in the cell, a singlet oxygen detection agent containing the fluorescent probe, and a singlet oxygen detection method using the fluorescent probe. The fluorescent probe for detecting singlet oxygen comprises a compound having a silicon-rhodamine skeleton and a skeleton that increases the fluorescence of the fluorescent probe after trapping singlet oxygen to be greater than the fluorescence before trapping singlet oxygen, or a salt, hydrate, or solvate thereof.