Abstract: A magnetoresistive element includes, in plan view, an element section and an extension region extending from an end portion of the element section; and an insulation layer is formed on the element section and the extension region. A contact hole having a recessed shape, penetrating through the insulation layer, and extending at least to the extension region is formed; an electrode pad is formed in the contact hole; a surface of the electrode pad is exposed to outside; and the electrode pad is electrically connected to the extension region. The element section and the extension region are integrally formed so as to have an identical layer configuration employing a magnetoresistive effect in which electrical resistance varies in response to external magnetic fields.

Abstract: A magnetoresistive element includes, in plan view, an element section and an extension region extending from an end portion of the element section; and an insulation layer is formed on the element section and the extension region. A contact hole having a recessed shape, penetrating through the insulation layer, and extending at least to the extension region is formed; an electrode pad is formed in the contact hole; a surface of the electrode pad is exposed to outside; and the electrode pad is electrically connected to the extension region. The element section and the extension region are integrally formed so as to have an identical layer configuration employing a magnetoresistive effect in which electrical resistance varies in response to external magnetic fields.

Abstract: A terminal electrode provided on a lead joint of a thin-film device fabricated by a thin-film technology. The terminal electrode is constituted by an upper pad and a lower pad, the lower pad being formed into a pillar-like shape protuberantly projecting from the lead joint. The upper pad, which is wider than the lower pad, is formed on the lower pad such that the center thereof is aligned with the center of the lower pad. This arrangement provides the terminal electrode that allows a higher-density insulating layer free of defects, such as voids, to be formed around the terminal electrode, leading to an improved mounting strength of the terminal electrode.

Abstract: An isolated DNA is provided coding for the variable region of an anti-human influenza A type virus antibody having the following characteristics: (a) specifically binds to the stem region of haemaggulutinin molecule of H1N1 and H2N2 subtypes of human influenza A type virus but does not specifically bind to the stem region of haemaggulutinin molecule of H3N2 subtype; and (b) has a neutralization activity for the H1N1 and H2N2 subtypes of human influenza A type virus but no neutralization activity for the H3N2 subtype.