Abstract: Provided is a semiconductor device comprising a semiconductor substrate having an upper surface and a lower surface, with a bulk donor distributed between the upper surface and the lower surface, that has a drift region of a first conductivity type provided thereon, the semiconductor device comprising a high-concentration region of a first conductivity type that is arranged between the drift region and the lower surface of the semiconductor substrate, includes a hydrogen donor, and has a carrier concentration that is higher than a bulk donor concentration, wherein the high-concentration region has a first portion in which a hydrogen donor concentration obtained by subtracting a bulk donor concentration from a carrier concentration is 7×1013/cm3 or more and 1.5×1014/cm3 or less, and a length of the first portion in a depth direction of the semiconductor substrate is 50% or more of a length of the high-concentration region.

Abstract: A semiconductor apparatus includes a flat portion disposed in a predetermined region containing a central depth position of a semiconductor substrate, between a fist peak disposed in an upper surface side of the semiconductor substrate and a second peak disposed in a lower surface side of the semiconductor substrate, and having a substantially flat concentration higher than a bulk donor concentration in a donor concentration distribution in a depth direction of a semiconductor substrate. The entire oxygen chemical concentration between the first peak and the second peak ranges from 3×1015 atoms/cm3 to 2×1018 atoms/cm3.

Abstract: A p-type semiconductor region is formed in a front surface side of an n-type semiconductor substrate. An n-type field stop (FS) region including protons as a donor is formed in a rear surface side of the semiconductor substrate. A concentration distribution of the donors in the FS region include first, second, third and fourth peaks in order from a front surface to the rear surface. Each of the peaks has a peak maximum point, and peak end points formed at both sides of the peak maximum point. The peak maximum points of the first and second peaks are higher than the peak maximum point of the third peak. The peak maximum point of the third peak is lower than the peak maximum point of the fourth peak.

Abstract: A method of applying to surfaces of component parts of an evaporator hydrophilic coatings which do not emit offensive odors under operating conditions, or at other times. The method provides coatings in which water glass and colloidal silica are attached to the surfaces in the form of solids in an amount of 0.010 to 0.066 g/m.sup.2.

Abstract: A heater (19) is disposed in an air flow duct (12) having an upper air outlet (22). An air filter (36) is disposed in a bypass duct (31) having an outlet (32) communicating with the upper outlet (22). Cool air flows into the bypass duct (31) from the air flow duct (12) upstream of the heater (19). Warm air is mixed with the cold air in the bypass duct (31) and is obtained either from the air flow duct (12) downstream of the heater (19) or is constituted by recirculated air from a vehicle passenger compartment.