Abstract: A bonding apparatus configured to bond a first substrate and a second substrate includes: a first holder configured to hold the first substrate; a second holder disposed to face the first holder in a vertical direction, and configured to hold the second substrate; a processing vessel accommodating the first holder and the second holder therein; and a horizontal position adjuster provided outside the processing vessel and connected to the first holder via a support supporting the first holder, the horizontal position adjuster being configured to adjust a horizontal position of the first holder.

Abstract: A separating method includes holding a combined substrate and separating a first substrate. In the holding of the combined substrate, the combined substrate in which the first substrate and a second substrate are bonded is held. In the separating of the first substrate, the first substrate is separated from the combined substrate, starting from a side surface of the combined substrate. The separating of the first substrate includes brining a fluid containing water into contact with the side surface.

Abstract: A one-sided spot welder includes a cylinder that includes a cylinder body and a rod, the rod projecting from an inside of the cylinder body by driving the rod toward one side in an axial direction, the rod retracting toward the inside of the cylinder body by driving the rod toward another side in the axial direction; an arm that is fixed to the rod; and a first welding electrode that is fixed to the arm, a tip of the first welding electrode being disposed on the another side in the axial direction than a base end of the first welding electrode.

Abstract: A bonding method of bonding substrates, a metal material being exposed on each of the substrates, is provided. The bonding method includes modifying a surface of each of the substrates to be bonded with a plasma of a processing gas; hydrophilizing the modified surface of each of the substrates; and bonding the hydrophilized surfaces of the substrates. In the hydrophilizing of the modified surface, a processing liquid is supplied to the surface of each of the substrates, and a recess amount of the metal material is controlled with the processing liquid.

Abstract: An object is to improve improvement in reliability. A light detection device includes a semiconductor layer having a photoelectric conversion region defined by an isolation region including a groove, in which the isolation region includes a first portion and a second portion adjacent to each other with the semiconductor layer in between in plan view, the semiconductor layer between the first portion and the second portion includes a first side portion on a side of the first portion and a second side portion on a side of the second portion, and the first side portion and the second side portion are different in planar shape.

Abstract: A surface modifying method of modifying a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas includes an adjusting process and a modifying process. In the adjusting process, an amount of moisture in a processing vessel is adjusted by supplying a humidified gas into the processing vessel allowed to accommodate the substrate therein. In the modifying process, the bonding surface of the substrate is modified by forming the plasma of the processing gas in the processing vessel in a state that the amount of moisture in the processing vessel is adjusted.

Abstract: A surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas. The surface modifying apparatus includes a processing vessel; a measuring unit; and a controller. The processing vessel is configured to accommodate the substrate therein. The measuring unit is configured to measure a value indicating an amount of moisture in the processing vessel. The controller is configured to determine whether or not bonding strength between the substrate and the another substrate, when it is assumed that the substrate modified in the processing vessel is bonded to the another substrate, is good based on the value indicating the amount of moisture in the processing vessel measured by the measuring unit.

Abstract: A welding gun includes a fixed electrode fixed to an arm, a movable electrode held by a holding member separated from the arm, a pressure driver including a rod portion that is fixed to the holding member, and linearly advances and retracts. The pressure driver applies pressure to a welding target sandwiched between the movable electrode and the fixed electrode by advancing the holding member to the arm with the rod portion, and a guide mechanism that is disposed to extend parallel to an axis of the rod portion, and guides the holding member. The rod portion is fixed to the holding member to be offset to an extended line of an axis of the fixed electrode, and the guide mechanism includes only one guide rod fixed to any of movable portions including the movable electrode, the holding member, and the rod portion.

Abstract: A solid-state imaging element according to the present disclosure includes a first light receiving pixel, a second light receiving pixel, and a metal layer. The first light receiving pixel receives visible light. The second light receiving pixel receives infrared light. The metal layer is provided to face at least one of a photoelectric conversion unit of the first light receiving pixel and a photoelectric conversion unit of the second light receiving pixel on an opposite side of a light incident side, and contains tungsten as a main component.

Abstract: A solid-state imaging element that includes a semiconductor layer, a floating diffusion region (FD), a penetrating pixel separation region, and a non-penetrating pixel separation region. In the semiconductor layer, a visible-light pixel (PDc) that receives visible light and an infrared-light pixel (PDw) that receives infrared light are two-dimensionally arranged. The floating diffusion region is provided in the semiconductor layer and is shared by adjacent visible-light and infrared-light pixels. The penetrating pixel separation region is provided in a region excluding a region corresponding to the floating diffusion region in an inter-pixel region of the visible-light pixel and the infrared-light pixel, and penetrates the semiconductor layer in a depth direction.

Abstract: The solid-state imaging element includes a plurality of first light receiving pixels that receives visible light, a plurality of second light receiving pixels that receives infrared light, a separation region, and a light shielding wall. The plurality of first light receiving pixels and the plurality of second light receiving pixels are arranged in a matrix, and the separation regionis arranged in a lattice pattern, light and has a plurality of intersection portions The light shielding wall is provided in the separation region and includes a first light shielding wall provided along a first direction in plan view, and a second light shielding wall provided along a second direction intersecting the first direction in plan view. In addition, the first light shielding wall and the second light shielding wall are spaced apart at the intersection portionof at least a part of the separation region.

Abstract: A separating method includes holding a combined substrate and separating a first substrate. In the holding of the combined substrate, the combined substrate in which the first substrate and a second substrate are bonded is held. In the separating of the first substrate, the first substrate is separated from the combined substrate, starting from a side surface of the combined substrate. The separating of the first substrate includes brining a fluid containing water into contact with the side surface.

Abstract: A bonding system includes a surface modifying apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate with plasma of a processing gas. The bonding apparatus is configured to bond two substrates modified by the surface modifying apparatus by an intermolecular force. The surface modifying apparatus includes: a processing chamber configured to accommodate therein the substrate; a processing gas supply configured to supply a processing gas containing moisture into the processing chamber; and a plasma forming unit configured to form the plasma of the processing gas containing the moisture.

Abstract: A bonding apparatus includes a first holder configured to hold a first substrate divided into multiple chips with a tape and a ring frame therebetween, the first substrate being attached to the tape, and an edge of the tape being attached to the ring frame; a second holder configured to hold a second substrate, which is disposed on an opposite side to the tape with respect to the first substrate therebetween, while maintaining a distance from the first substrate; and a pressing device configured to press the multiple chips one by one with the tape therebetween to press and bond the corresponding chip to the second substrate.

Abstract: A bonding apparatus configured to bond a first substrate and a second substrate includes a first holder configured to hold the first substrate; a second holder disposed to face the first holder, and configured to hold the second substrate; two imaging units each including a first imaging device configured to image a first alignment mark formed on a bonding surface of the first substrate and a second imaging device configured to image a second alignment mark formed on a bonding surface of the second substrate; a first moving mechanism configured to move the two imaging units along a first direction in a planar region between the first holder and the second holder; a second moving mechanism configured to move the first imaging unit along a second direction orthogonal to the first direction; and a third moving mechanism configured to move the second imaging unit along the second direction.

Abstract: A bonding apparatus configured to bond a first substrate and a second substrate includes: a first holder configured to hold the first substrate; a second holder disposed to face the first holder in a vertical direction, and configured to hold the second substrate; a processing vessel accommodating the first holder and the second holder therein; and a horizontal position adjuster provided outside the processing vessel and connected to the first holder via a support supporting the first holder, the horizontal position adjuster being configured to adjust a horizontal position of the first holder.

Abstract: An imaging element of the present disclosure includes: a photoelectric conversion section 21 provided in a substrate 30; a polarizer 50 formed over the photoelectric conversion section 21, with a single ground insulating layer 31 interposed therebetween; and a light shielding section 41A formed on an upper side of a peripheral region 21? around the photoelectric conversion section 21.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell array including: a plurality of memory cells stacked above a substrate, and a plurality of word lines respectively coupled to gates of the plurality of memory cells and extending in a first direction; and a first film including a first area above the memory cell array and a second area different from the first area, and having a compressive stress higher than silicon oxide. In the first area, a plurality of first trenches extending in the first direction are aligned in a second direction that intersects the first direction. In the second area, a second trench in a mesh form is provided.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell array including: a plurality of memory cells stacked above a substrate, and a plurality of word lines respectively coupled to gates of the plurality of memory cells and extending in a first direction; and a first film including a first area above the memory cell array and a second area different from the first area, and having a compressive stress higher than silicon oxide. In the first area, a plurality of first trenches extending in the first direction are aligned in a second direction that intersects the first direction. In the second area, a second trench in a mesh form is provided.

Abstract: According to one embodiment, a semiconductor memory device includes: first interconnect layers; second interconnect layers; a first memory pillar extending through the first interconnect layers; a second memory pillar extending through the second interconnect layers; a first film provided above the first interconnect layers, having a planar shape corresponding to the first interconnect layers and extending in the first direction; and a second film provided above the second interconnect layers, separate from the first film in the second direction, having a planar shape corresponding to the second interconnect layers and extending in the first direction. The first and second films have a compressive stress higher than a silicon oxide film.