Abstract: The present invention provides an economical package for housing semiconductor chip that allows a semiconductor chip to operate normally and stably over long periods by efficiently transferring heat generated during the operation of the semiconductor chip to the package mount substrate.

Abstract: The width of a signal line 3 is made narrower at a part connected with a connector pin 1 than a signal line width that can match the connector characteristic impedance. Furthermore, the width of the signal line 3 is made narrower at the part connected with the connector pin 1 than the projection width of the connector pin diameter. The disclosed connection structure of a planer waveguide signal line can, when a high frequency signal is transmitted from a rod-shaped coaxial structure to the signal line, prevent the transmissivity deterioration caused by radiation of the signal or reflection of the signal back to the outgoing side at the part of the signal line connected with a connector pin. The connection structure can also minimize transmission loss due to assembling error made during assembling into a semiconductor package.

Abstract: A conductive polycrystalline diamond film having specific resistance of at least 1×10−4 &OHgr;cm and less than 1×103 &OHgr;cm, whose film thickness is in the range of at least 0.1 &mgr;m and not more than 500 &mgr;m, is film-formed by vapor-phase synthesis on a surface employed for pressure bonding, a surface opposite to this surface or at least two side surfaces intersecting with these surfaces on a substrate of a bonding tool tip that is applicable for bonding and packaging a semiconductor chip.

Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.

Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.

Abstract: An initial single-crystalline diamond base material is prepared from a flat plate having a major surface and side surfaces consisting of low-index planes. Then, single crystalline diamond is homoepitaxially vapor-deposited on the single-crystalline diamond base material, and a resulting diamond material is cut and polished in a particular manner to provide a successive base material on which single-crystalline diamond is again grown, thereby forming a single-crystalline diamond having a large area. A holder for the single-crystalline diamond base material consists of or is coated with a material hardly forming a compound with carbon. Single crystalline diamond can be stably formed on the surfaces of the base material. Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time using either plasma CVD or a thermal filament method.

Abstract: In a method of synthesizing diamond on a substrate from plasma containing a carbon component, filaments containing tungsten as a thermoelectron-emitting material are arranged above a substrate in a chamber. An electrode is provided at a position separated from and particularly above the filaments. The filaments are at least temporarily energized with a potential relatively higher than that of the substrate, while the electrode is at least temporarily supplied with a potential relatively higher than that of the filaments. Thus, plasma is generated between the filaments and the substrate, while electrons are moved from the filaments to the electrode for also generating plasma between the filaments and the electrode, thereby forming nuclei of diamond on the substrate. Thereafter, the respective potentials of the electron emitting filaments and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.

Abstract: No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond single crystal substrate by a vapor phase deposition method. In an early step, a negative bias is applied to the substrate. In the case of a Si substrate, an intermediate layer of .beta.-SiC is first deposited on the Si substrate by supplying a low carbon concentration material gas. Then the carbon concentration is raised for making a diamond film. The convex-distorted wafer is stuck to a holder having a shaft which is capable of inclining to the holder. The wafer is pushed to a turn-table of a polishing machine. The convex diamond wafer can fully be polished by inclining the holder to the shaft. A wide distorted mirror wafer of diamond is produced. Fine wire patterns can be made on the diamond mirror wafer by the photolithography.

Abstract: A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are combined with the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such heat sink is produced by a simple process including arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper ends of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.

Abstract: A window material, which has a high thermal conductivity material layer having a thermal conductivity of at least 10 W/cm.multidot.K and which has a cooling medium flow path on or in the high thermal conductivity material layer, has a high heat-dissipating property and a high transmittance.

Abstract: Continual boron-doped diamond parts with ends are formed in a non-doped insulating diamond crystal. Ohmic electrodes are deposited on the ends of the boron-doped diamond parts. Non-doped diamond encloses and insulates the boron-doped diamond parts. When the boron-doped diamond parts are supplied with a current, the boron-doped diamond parts generate Joule's heat. The device acts as a heater. Since the whole heater is made of diamond crystal, the heater can posses an extremely small size. The heater enjoys high resistance against high temperature, especially in an anaerobic atmosphere. The diamond heater can be adopted in vacuum or in liquid, since the insulating diamond layers are highly resistant against vacuum and liquid.

Abstract: An improved adhesion or bonding between diamond fibers and a matrix of at least one organic polymer such as a resin is achieved in a composite material reinforced with vapor-deposited diamond. To improve bonding to the matrix, hydrogen is removed from the surface of vapor-deposited diamond fiber. This can be achieved by heating the diamond under an oxidative atmosphere at a temperature of about 150.degree. C. to about 800.degree. C., or under a non-oxidative atmosphere at a temperature of about 800.degree. C. to about 1500.degree. C. The surface of the vapor-deposited diamond, which contains not more than about 1.times.10.sup.15 /cm.sup.2 of hydrogen atoms, is bonded to the matrix of resin for example with sufficient strength. To further improve bonding, diamond doped with B or N is employed as the reinforcing material or at least a surface layer thereof.

Abstract: A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are embedded in the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such a heat sink can be produced by a simple process of arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper end of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.

Abstract: Diamond particles are dispersed in a metal and the metal matrix is molten and recrystallized so that the diamond particles are aligned to the same crystal orientation to form a substrate equivalent to a diamond single crystal substrate and then the diamond is grown by a vapor phase synthesis on the substrate. The diamond single crystal having the homogeneity and good quality can be formed and the diamond single crystal having a large area can be easily and economically obtained.

Abstract: A plurality of single-crystalline diamond plates having principal surfaces consisting essentially of {100} planes are prepared. The diamond plates are so arranged that the respective principal surfaces are substantially flush with each other. In this arrangement, an angle formed by crystal orientations of the principal surfaces between adjacent plates is not more than 5.degree., a clearance between the adjacent plates is not more than 30 .mu.m, and a difference in height of the principal surfaces is not more than 30 .mu.m between the adjacent plates. To secure this arrangement, the plurality of diamond plates are joined to each other by depositing diamond on the plates to form a single large diamond plate. After such joining, the principal surfaces of the diamond plates are polished in order to eliminate steps or height differences. Then, diamond is epitaxially grown on a polished surface of the large diamond plate from a vapor phase.

Abstract: A method for making a quasi-single crystal diamond is provided. Small diamond granules, like islands, are epitaxially grown on a single crystal substrate having a lattice constant which is similar to that of diamond. A deposition layer is formed on the island diamond granules. The initial substrate is eliminated. Diamond is grown on the deposition layer having diamond granules to make a diamond film having a certain thickness. The initially-grown diamond granules which have the same crystallographical direction align the direction of crystals of the latter-grown diamond by playing a role of seed crystals.

Abstract: Disclosed is a novel compound, designated BU-4514N, which is produced by cultivation of a novel strain of Microtetraspora, designated species T689-92. The novel compound possesses antibacterial and neuritogenic properties.

Abstract: The present invention relates to a novel .alpha.-glucosidase inhibitor, pradimicin Q, having the following formula ##STR1## and its pharmaceutically acceptable base salts.

Abstract: The present invention relates to a novel .alpha.-glucosidase inhibitor, pradimicin Q, having the following formula ##STR1## and its pharmaceutically acceptable base salts.

Abstract: 3,3'-Neotrehalosadiamine antibiotic is prepared by fermentation of B. pumilus K169-B91 (ATCC No. 53206) in a nutrient medium preferably comprising soybean meal, corn starch, calcium carbonate and magnesium sulfate. The antibiotic and pharmaceutically acceptable salts and hydrates thereof and compositions containing these are useful to treat bacterial infections in mammals.